Si7892DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
25 22
rDS(on) (W)
0.0045 @ VGS = 10 V 0.006 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D Low Gate Charge D 100% Rg Tested
APPLICATIONS
D Synchronous Rectifier
PowerPAK SO-8
D 6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
G
S N-Channel MOSFET
Bottom View Ordering Information: Si7892DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
30 "20 25
Steady State
Unit
V
15 12 60 A 1.6 1.9 1.2 -55 to 150 W _C
ID IDM IS PD TJ, Tstg
20
4.5 5.4 3.4
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71773 S-31727—Rev. B, 18-Aug-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
18 50 1.0
Maximum
23 65 1.5
Unit
_C/W
1
Si7892DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 22 A VDS = 15 V, ID = 25 A IS = 4.5 A, VGS = 0 V 30 0.0037 0.0048 80 0.75 1.2 0.0045 0.006 S V 1.0 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 17 10 65 35 50 VDS = 15 V, VGS = 4.5 V, ID = 25 A 25 6.7 9.7 2.4 30 20 130 60 80 ns W 35 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60 VGS = 10 thru 4 V 50 40 I D - Drain Current (A) 50
Transfer Characteristics
I D - Drain Current (A)
40 3V 30
30 TC = 125_C 20 25_C 10 -55_C
20
10
0 0 1 2 3 4 5
0 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V) Document Number: 71773 S-31727—Rev. B, 18-Aug-03
www.vishay.com
2
Si7892DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.010 4000
Capacitance
r DS(on) - On-Resistance ( W )
0.008 C - Capacitance (pF) 3000 Ciss
0.006 VGS = 4.5 V 0.004 VGS = 10 V
2000
Coss 1000 Crss
0.002
0.000 0 10 20 30 40 50 60
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 25 A 1.8
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 25 A
r DS(on) - On-Resistance ( W) (Normalized) 20 30 40 50 60
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0 0 10
0.6 -50
-25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60 0.020
On-Resistance vs. Gate-to-Source Voltage
10
TJ = 150_C TJ = 25_C
r DS(on) - On-Resistance ( W )
0.016
I S - Source Current (A)
0.012
0.008 ID = 25 A 0.004
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0.000 0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71773 S-31727—Rev. B, 18-Aug-03
www.vishay.com
3
Si7892DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 0.4 160 0.2 V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 40 -0.8 -1.0 -50 0 0.001 ID = 250 mA Power (W) 120 200
Single Pulse Power
80
-25
0
25
50
75
100
125
150
0.01
0.1 Time (sec)
1
10
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 50_C/W
Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 Single Pulse 0.05 0.02
0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
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Document Number: 71773 S-31727—Rev. B, 18-Aug-03
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