SI7900

Specification Comparison Vishay Siliconix Si7900AEDN vs. Si7900EDN Description: Dual N-Channel, 20-V (D-S) MOSFET with Common Drain Package: PowerPAKr 1212 Pin Out: Identical Part Number Replacements: Si7900AEDN-T1 Replaces Si7900EDN-T1 Si7900AEDN-T1—E3 (Lead Free version) Replaces Si7900EDN-T1 Summary of Performance: The Si7900AEDN is the replacement for the original Si7900EDN; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD Tj and Tstg RthJA Si7900AEDN 20 "12 8.5 6.4 30 2.9 2.9 3.1 −55 to 150 40 Si7900EDN 20 "12 9 6.4 30 2.9 3.2 1.7 −55 to 150 38 Unit V A W _C _C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si7900AEDN Parameter Static Gate-Threshold Voltage Gate-Body Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance S O Forward Transconductance Diode Forward Voltage VGS = 4.5 V VGS = 4.5 V VGS = 2.5 V VGS = 1.8 V gfs VSD rDs(on) VGS = 12 V VGS = 4.5 V VG(th) IGSS IDSS ID(on) 20 0.020 0.022 0.026 25 0.65 1.1 0.026 0.030 0.036 0.4 0.9 "1 "10 1 20 0.020 0.025 0.031 25 0.65 1.1 0.026 0.031 0.039 S V W 0.4 "1 "10 1 V mA mA mA A Si7900EDN Max Min Typ Max Unit Symbol Min Typ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd 10.5 1.9 1.8 16 12.5 2.7 2.7 18 nC Switching Turn-On Time Turn-On Time Turn-Off Turn Off Time td(on) tr td(off) tf 0.85 1.3 8.6 4.29 1.25 2.0 13 6.5 0.7 1.3 5.5 5.5 1.0 2.0 8.0 8.0 www.vishay.com ms Document Number: 72907 22-Mar-04 1