SI7913DN

Si7913DN Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.037 @ VGS = −4.5 V −20 0.048 @ VGS = −2.5 V 0.066 @ VGS = −1.8 V FEATURES ID (A) −7.4 −6.5 −5.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package APPLICATIONS D Portable − PA Switch − Battery Switch − Load Switch S S RoHS COMPLIANT PowerPAK 1212-8 3.30 mm S1 1 2 G1 S2 3.30 mm 3 4 G G G2 D1 8 7 D1 D2 D D2 D P-Channel MOSFET 6 5 Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free) P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −20 "8 Unit V −7.4 −5.3 −20 −2.3 2.8 1.5 −55 to 150 260 −5.0 −3.6 A −1.1 1.3 0.85 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 35 75 4 Maximum 44 94 5 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72615 S-51129—Rev. B, 13-Jun-05 www.vishay.com 1 Si7913DN Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 85_C VDS v −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −7.4 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −6.5 A VGS = −1.8 V, ID = −1.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −6 V, ID = −7.4 A IS = −2.3 A, VGS = 0 V −20 0.029 0.038 0.051 20 −0.74 −1.2 0.037 0.048 0.066 S V W −0.40 −1.0 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −2.3 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W f = 1 MHz VDS = −10 V, VGS = −4.5 V, ID = −7.4 A 15.3 2.0 3.9 7 20 70 72 150 25 30 110 110 225 50 ns W 24 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 20 2V 16 I D − Drain Current (A) Transfer Characteristics 16 I D − Drain Current (A) 12 12 8 1.5 V 8 TC = 125_C 4 25_C −55_C 4 1V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Document Number: 72615 S-51129—Rev. B, 13-Jun-05 www.vishay.com 2 Si7913DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.10 On-Resistance vs. Drain Current 2100 1800 Capacitance r DS(on) − On-Resistance ( W ) 0.08 C − Capacitance (pF) 1500 1200 900 600 Coss 300 Crss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 VGS = 1.8 V VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 0.06 0.02 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 7.4 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7.4 A 3 rDS(on) − On-Resiistance (Normalized) 8 12 16 20 4 1.4 1.2 2 1.0 1 0.8 0 0 4 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.08 ID = 7.4 A 0.06 I S − Source Current (A) 10 TJ = 150_C 0.04 ID = 1.5 A TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72615 S-51129—Rev. B, 13-Jun-05 www.vishay.com 3 Si7913DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 −0.1 −0.2 −50 10 Power (W) ID = 250 mA 50 Single Pulse Power, Junction-to-Ambient 40 30 20 −25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area, Junction-To-Ambient IDM Limited Limited by rDS(on) 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 10 dc Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72615 S-51129—Rev. B, 13-Jun-05 Si7913DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72615. Document Number: 72615 S-51129—Rev. B, 13-Jun-05 www.vishay.com 5