SPICE Device Model Si7922DN Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
DESCRIPTION
The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 70322 S-60245Rev. B, 20-Feb-06 www.vishay.com 1
SPICE Device Model Si7922DN Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Current
a
Symbol
Test Condition
Simulated Data
2.6 29 0.16 0.18 4.8 0.73
Measured Data
Unit
VGS(th) ID(on) rDS(on) gfs VSD
VDS = VGS, ID = 250 µA VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 2.5 A VGS = 6 V, ID = 2.3 A VDS = 10 V, ID = 2.5 A IS = 2.2 A, VGS = 0 V
V A 0.16 0.19 5.3 0.8 Ω S V
Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea
b
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time
Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.2 A, di/dt = 100 A/µs VDD = 50 V, RL = 50 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω VDS = 50 V, VGS = 10 V, ID = 2.5 A
4.8 1.1 1.9 7 14 8 13 32
5.2 1.1 1.9 7 11 8 11 40 ns nC
Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing.
www.vishay.com 2
Document Number: 70322 S-60245Rev. B, 20-Feb-06
SPICE Device Model Si7922DN Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 70322 S-60245Rev. B, 20-Feb-06
www.vishay.com 3
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