SI7922DN_07

Si7922DN New Product Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES ID (A) 2.5 2.3 rDS(on) (W) 0.195 @ VGS = 10 V 0.230 @ VGS = 6 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package, 1/3 the Space of An SO-8 While Thermally Comparable D PWM Optimized APPLICATIONS D DC/DC Primary-Side Switch D 48-V Battery Monitoring PowerPAKt 1212-8 D1 3.30 mm S1 D2 1 2 3.30 mm G1 S2 3 4 D1 G2 G1 G2 8 7 D1 D2 6 5 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C 0.1 mH TA = 25_C TA = 85_C Symbol VDS VGS 10 secs 100 "20 2.5 Steady State Unit V 1.8 1.3 10 5 1.25 mJ 1.1 1.3 0.69 -55 to 150 W _C A A ID IDM IAS EAS IS PD TJ, Tstg 1.8 2.2 2.6 1.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72031 S-21976—Rev. A, 04-Nov-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 38 77 4.3 Maximum 48 94 5.4 Unit _C/W 1 Si7922DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 2.5 A VGS = 6 V, ID = 2.3 A VDS = 10 V, ID = 2.5 A IS = 2.2 A, VGS = 0 V 10 0.162 0.190 5.3 0.8 1.2 0.195 0.230 S V 2 4 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.2 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 50 V, VGS = 10 V, ID = 2.5 A 5.2 1.1 1.9 1.7 7 11 8 11 40 15 20 15 20 80 ns W 8 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 6 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 10 Transfer Characteristics 6 5V 4 6 4 TC = 125_C 2 25_C -55 _C 0 2 3V 0 0 1 2 3 4 5 6 7 8 4V 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72031 S-21976—Rev. A, 04-Nov-02 www.vishay.com 2 Si7922DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.5 r DS(on) - On-Resistance ( W ) 320 280 C - Capacitance (pF) 0.4 240 200 160 120 80 Coss 40 0.0 0 2 4 6 8 10 0 0 Crss 20 40 60 80 100 Ciss Vishay Siliconix Capacitance 0.3 VGS = 6 V 0.2 VGS = 10 V 0.1 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 50 V ID = 2.5 A 8 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 6 4 2 r DS(on) - On-Resistance ( W) (Normalized) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.4 I S - Source Current (A) 0.3 ID = 2.5 A 0.2 TJ = 150_C 0.1 TJ = 25_C 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72031 S-21976—Rev. A, 04-Nov-02 www.vishay.com 3 Si7922DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 40 0.2 V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 10 -0.8 -1.0 -50 0 0.001 ID = 250 mA Power (W) 30 50 Single Pulse Power 20 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-To-Ambient 100 IDM Limited 10 I D - Drain Current (A) rDS(on) Limited P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited 0.1 TA = 25_C Single Pulse 0.01 0.1 1 10 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 100 BVDSS Limited VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 77_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72031 S-21976—Rev. A, 04-Nov-02 Si7922DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 Vishay Siliconix 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 NOTE: The minimum creepage between D1 and D2 for this 100-V device is 0.2 mm. Please see PowerPAK 1212-8 outline drawing, document # 71656, for more information. Document Number: 72031 S-21976—Rev. A, 04-Nov-02 www.vishay.com 5