SI7940DP

Si7940DP New Product Vishay Siliconix Dual N-Channel 12-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized ID (A) 11.8 9.8 PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) 0.017 @ VGS = 4.5 V 0.025 @ VGS = 2.5 V APPLICATIONS D Point-of-Load Synchronous Rectifier - 5-V or 3.3-V BUS Step Down - Qg Optimized for 500-kHz + Operation D Synchronous Buck Shoot-Through Resistant D1 PowerPAKt D2 6.15 mm S1 1 2 5.15 mm G1 S2 3 4 D1 G2 G1 G2 8 7 D1 D2 6 5 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 12 "8 11.8 Steady State Unit V 7.6 6.1 20 A 1.1 1.4 0.9 -55 to 150 W _C ID IDM IS PD TJ, Tstg 9.5 2.9 3.5 2.2 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71845 S-21167—Rev. B, 29-Jul-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 26 60 3.9 Maximum 35 85 5.5 Unit _C/W 1 Si7940DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 9.6 V, VGS = 0 V VDS = 9.6 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 11.8 A VGS = 2.5 V, ID = 9.8 A VDS = 5 V, ID = 11.8 A IS = 2.9 A, VGS = 0 V 20 0.014 0.020 32 0.77 1.2 0.017 0.025 S V 0.6 1.5 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 6 V, VGS = 4.5 V, ID = 11.8 A 11.5 3.2 2.5 30 50 60 25 40 45 75 90 40 80 ns 17 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 Transfer Characteristics 12 2V 8 12 8 TC = 125_C 4 25_C -55 _C 4 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71845 S-21167—Rev. B, 29-Jul-02 Si7940DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 2500 Vishay Siliconix Capacitance C - Capacitance (pF) 0.04 2000 Ciss 1500 0.03 VGS = 4.5 V 0.02 VGS = 2.5 V 0.01 1000 Coss 500 Crss 0.00 0 4 8 12 16 20 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 11.8 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 11.8 A 1.4 3 r DS(on) - On-Resistance ( W) (Normalized) 6 9 12 15 1.2 2 1.0 1 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.04 0.05 On-Resistance vs. Gate-to-Source Voltage ID = 5 A 0.03 ID = 11.8 A 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71845 S-21167—Rev. B, 29-Jul-02 www.vishay.com 3 Si7940DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 40 Single Pulse Power 0.2 V GS(th) Variance (V) 32 ID = 250 mA Power (W) 24 -0.0 -0.2 16 -0.4 8 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-To-Ambient 100 rDS(on) Limited 10 I D - Drain Current (A) IDM Limited 1 ms 10 ms 1 ID(on) Limited 100 ms 1s 10 s dc 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 71845 S-21167—Rev. B, 29-Jul-02 Si7940DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Vishay Siliconix 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 71845 S-21167—Rev. B, 29-Jul-02 www.vishay.com 5