SI7970DP-T1-E3

Si7970DP New Product Vishay Siliconix Dual N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) 0.019 @ VGS = 10 V 0.026 @ VGS = 4.5 V ID (A) 10.2 8.7 D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Dual MOSFET for Space Savings 100% Rg Tested Package APPLICATIONS D Primary Side Switch − Low Power Quarter Buck D Intermediate BUS Switch PowerPAK SO-8 D1 D2 6.15 mm S1 1 2 G1 S2 5.15 mm 3 4 G2 D1 8 7 G1 D1 D2 G2 6 5 D2 Bottom View Ordering Information: Si7970DP-T1—E3 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 40 "20 10.2 8.2 40 2.9 30 45 3.5 2.2 Steady State Unit V 6.5 5.2 A 1.2 mJ 1.4 0.9 W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72826 S-40431—Rev. A, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 60 2.2 Maximum 35 85 2.7 Unit _C/W 1 Si7970DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10.2 A VGS = 4.5 V, ID = 8.7 A VDS = 15 V, ID = 10.2 A IS = 2.9 A, VGS = 0 V 30 0.016 0.021 26 0.8 1.2 0.019 0.026 1 3 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 20 V, RL = 20 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz 1 VDS =20 V, VGS = 10 V, ID = 10.2 A 23 4.4 5.6 2.3 15 15 50 16 30 3.9 25 25 75 25 60 ns W 35 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 6 V 32 I D − Drain Current (A) 5V I D − Drain Current (A) 32 40 Transfer Characteristics 24 24 16 16 TC = 125_C 8 25_C −55_C 0 8 4V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72826 S-40431—Rev. A, 15-Mar-04 www.vishay.com 2 Si7970DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.05 r DS(on) − On-Resistance ( W ) Vishay Siliconix On-Resistance vs. Drain Current 2000 Capacitance C − Capacitance (pF) 0.04 1600 Ciss 1200 0.03 VGS = 4.5 V 0.02 VGS = 10 V 800 Coss 400 Crss 0 10 20 30 40 0.01 0.00 0 8 16 24 32 40 0 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 20 V ID = 10.2 A 8 rDS(on) − On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10.2 A 6 4 2 0 0 5 10 15 20 25 Qg − Total Gate Charge (nC) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.06 0.05 0.04 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) − On-Resistance ( W ) I S − Source Current (A) ID = 10.2 A 0.03 0.02 0.01 0.00 TJ = 25_C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72826 S-40431—Rev. A, 15-Mar-04 www.vishay.com 3 Si7970DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 80 −0.0 V GS(th) Variance (V) −0.2 −0.4 −0.6 −0.8 20 −1.0 −1.2 −50 0 0.001 ID = 250 mA Power (W) 60 100 Single Pulse Power 40 −25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area, Junction-To-Ambient rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.01 0.1 1 BVDSS Limited 10 100 0.1 TA = 25_C Single Pulse VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72826 S-40431—Rev. A, 15-Mar-04 Si7970DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Document Number: 72826 S-40431—Rev. A, 15-Mar-04 www.vishay.com 5