SI7991DP

Si7991DP New Product Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A) −10.2 −8.1 rDS(on) (W) 0.023 @ VGS = −10 V 0.035 @ VGS = −4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Load Switch − Notebook PCs − Desktop PCs − Game Stations D Battery Switch PowerPAK SO-8 S1 6.15 mm S1 S2 1 2 G1 S2 5.15 mm 3 4 G1 G2 G2 D1 8 7 D1 D2 6 5 D2 Ordering Information: Si7991DP-T1 D1 P-Channel MOSFET D2 P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −10.2 −8.2 −30 −2.9 3.5 2.2 −55 to 150 −6.6 −5.3 A −1.2 1.4 0.9 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72515 S-32127—Rev. B, 27-Oct-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 28 60 3 Maximum 35 85 3.7 Unit _C/W 1 Si7991DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 55_C VDS v −5 V, VGS = −10 V VGS = −10 V, ID = −10.0 A VGS = −4.5 V, ID = −8.2 A VDS = −15 V, ID = −10.0 A IS = −2.9 A, VGS = 0 V −30 0.019 0.027 22 −0.8 −1.2 0.023 0.035 −1 −3 "100 −1 −5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −2.9 A, di/dt = 100 A/ms VDD = −15 V, RL = 15 W V, ID ^ −1 A, VGEN = −10 V, RG = 6 W f = 1 MHz VDS = −15 V, VGS = −10 V, ID = −10.0 A 38 6.3 9.7 10 10 15 130 70 45 15 25 200 105 70 ns W 57 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 4 V 24 I D − Drain Current (A) I D − Drain Current (A) 24 30 Transfer Characteristics 18 18 12 3V 12 TC = 125_C 25_C −55_C 2.5 3.0 3.5 4.0 6 6 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 VGS − Gate-to-Source Voltage (V) Document Number: 72515 S-32127—Rev. B, 27-Oct-03 2 Si7991DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) − On-Resistance ( W ) 3000 2500 C − Capacitance (pF) 2000 1500 1000 Coss 500 Crss 0.00 0 6 12 18 24 30 0 0 6 12 18 24 30 Ciss Vishay Siliconix Capacitance 0.04 VGS = 4.5 V VGS = 10 V 0.03 0.02 0.01 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 10 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 1.4 6 r DS(on) − On-Resistance (W ) (Normalized) 15 20 25 30 35 40 1.2 4 1.0 2 0.8 0 0 5 10 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.08 ID = 10 A 0.06 ID = 5 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72515 S-32127—Rev. B, 27-Oct-03 www.vishay.com 3 Si7991DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 ID = 250 mA V GS(th) Variance (V) 0.4 0.2 0.0 −0.2 −0.4 −50 6 Power (W) 30 Single Pulse Power, Junction-to-Ambient 24 18 12 −25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 1000 TJ − Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 100 P(t) = 10 dc 0.01 0.1 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72515 S-32127—Rev. B, 27-Oct-03 Si7991DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Document Number: 72515 S-32127—Rev. B, 27-Oct-03 www.vishay.com 5