SI8405DB

Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.055 @ VGS = - 4.5 V - 12 0.070 @ VGS = - 2.5 V 0.090 @ VGS = - 1.8 V FEATURES ID (A) - 4.9 - 4.4 - 4.0 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D PA, Battery and Load Switch D Battery Charger Switch MICRO FOOT Bump Side View 3 D D 2 Backside View G S 8405 xxx Device Marking: 8405 xxx = Date/Lot Traceability Code D S 4 G 1 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Package Reflow Conditionsb VPR IR/Convection TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State - 12 "8 Unit V - 4.9 - 3.9 - 10 - 2.5 2.77 1.77 - 55 to 150 215 220 - 3.6 - 2.8 A - 1.3 1.47 0.94 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (drain) t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 35 72 16 Maximum 45 85 20 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. Document Number: 71814 S-20804—Rev. C, 01-Jul-02 www.vishay.com 1 Si8405DB Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 70_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 1 A VGS = - 1.8 V, ID = - 1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 10 V, ID = - 1 A IS = - 1 A, VGS = 0 V -5 0.045 0.055 0.073 6 - 0.73 - 1.1 0.055 0.070 0.090 S V W - 0.45 - 0.7 - 0.95 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 1 A 14 1.7 2.5 16 32 120 80 46 25 50 180 120 70 ns 21 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics VGS = 5 thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 10 10 Transfer Characteristics 6 1.5 V 4 6 4 TC = 125_C 2 25_C - 55_C 2 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS - Gate-to-Source Voltage (V) Document Number: 71814 S-20804—Rev. C, 01-Jul-02 2 Si8405DB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.14 0.12 r DS(on) - On-Resistance ( W ) 1600 0.10 0.08 0.06 0.04 VGS = 4.5 V 0.02 0.00 0 2 4 ID - Drain Current (A) 6 8 0 0 2 4 6 8 10 12 VGS = 1.8 V VGS = 2.5 V C - Capacitance (pF) Ciss On-Resistance vs. Drain Current 2000 Capacitance 1200 800 Coss 400 Crss VDS - Drain-to-Source Voltage (V) 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 4 VDS = 6 V ID = 1 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1 A r DS(on) - On-Resistance (W ) (Normalized) 8 12 16 20 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.30 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.24 ID = 1 A 0.18 I S - Source Current (A) TJ = 150_C 1 0.12 TJ = 25_C 0.06 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71814 S-20804—Rev. C, 01-Jul-02 www.vishay.com 3 Si8405DB Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 20 - 0.1 - 0.2 - 50 ID = 250 mA 60 Power (W) 80 Single Pulse Power, Juncion-To-Ambient 40 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 72_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71814 S-20804—Rev. C, 01-Jul-02 Si8405DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4−BUMP (2 X 2, 0.8−mm PITCH) 4 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 e A A2 A1 Bump Note 2 b Diamerter e Recommended Land S Silicon E e 8405 XXX e D Mark on Backside of Die S NOTES (Unless Otherwise Specified): 5. 6. 7. 8. Laser mark on the silicon die back, coated with a thin metal. Bumps are Eutectic solder 63/57 Sn/Pb. Non-solder mask defined copper landing pad. The flat side of wafers is oriented at the bottom. MILLIMETERS* Dim A A1 A2 b D E e S Min 0.600 0.260 0.340 0.370 1.520 1.520 0.750 0.370 INCHES Min 0.0236 0.0102 0.0134 0.0146 0.0598 0.0598 0.0295 0.0146 Max 0.650 0.290 0.360 0.410 1.600 1.600 0.850 0.380 Max 0.0256 0.0114 0.0142 0.0161 0.0630 0.0630 0.0335 0.0150 * Use millimeters as the primary measurement. Document Number: 71814 S-20804—Rev. C, 01-Jul-02 www.vishay.com 5