Si8497DB
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () Max. 0.053 at VGS = - 4.5 V 0.071 at VGS = - 2.5 V 0.120 at VGS = - 2.0 V ID (A)d - 13 - 11 -5 16.3 nC Qg (Typ.)
• Halogen-free According to IEC 61249-2-21 Definition • • • • TrenchFET® Power MOSFET Ultra-small 1.5 mm x 1 mm Maximum Outline Ultra-thin 0.59 Maximum Height Compliant to RoHS Directive 2002/95/EC
MICRO FOOT
Bump Side View Backside View
APPLICATIONS
• Low On-Resistance Load Switch, Charger Switch,
S 2
G 1
S 3
S 6
OVP Switch and Battery Switch for Portable Devices - Low Power Consumption - Increased Battery Life - Space Savings on PCB
S
8497
XXX
D 4
D 5
G
Device Marking: 8497 xxx = Date/Lot Traceability Code Ordering Information: Si8497DB-T2-E1 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Package Reflow Conditionsc IR/Convection TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 30 ± 12 - 13 - 10 - 5.9a, b - 4.7a, b - 20 - 11 - 2.3a, b 13 8.4 2.77a, b 1.77a, b - 55 to 150 260 °C W A Unit V
Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. Based on TC = 25 °C. Document Number: 63355 S11-1385-Rev. A, 11-Jul-11 www.vishay.com 1
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case
a, b
Symbol RthJA Steady State RthJC (Drain)c
Typical 37 7
Maximum 45 9.5
Unit °C/W
Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 85 °C/W. c. Case is defined as top surface of the package.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 15 V, RL = 10 ID - 1.5 A, VGEN = - 10 V, Rg = 1 VDD = - 15 V, RL = 10 ID - 1.5 A, VGEN = - 4.5 V, Rg = 1 VGS = - 0.1 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 1.5 A VDS = - 15 V, VGS = - 4.5 V, ID = - 1.5 A VDS = - 15 V, VGS = 0 V, f = 1 MHz 1320 121 102 32.6 16.3 2.5 4.9 8 17 15 60 25 50 10 75 22 35 30 120 50 100 20 150 45 ns 49 25 nC pF
a
Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs
Test Conditions VGS = 0, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 70 °C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1.5 A VGS = - 2.5 V, ID = - 1 A VGS = - 2 V, ID = - 0.5 A VDS = - 15 V, ID = - 1.5 A
Min. - 30
Typ.
Max.
Unit V
- 29 3.1 - 0.5 - 1.1 ± 100 -1 - 10 -5 0.043 0.058 0.075 10 0.053 0.071 0.120
mV/°C V nA µA A S
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Document Number: 63355 S11-1385-Rev. A, 11-Jul-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C IS = - 1.5 A, VGS = 0 - 0.73 21 7 8 13 TC = 25 °C - 15 - 20 - 1.2 40 15 A V ns nC ns Symbol Test Conditions Min. Typ. Max. Unit
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Document Number: 63355 S11-1385-Rev. A, 11-Jul-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20 VGS = 5 V thru 2.5 V
8 10
15 ID - Drain Current (A)
ID - Drain Current (A) 6 TC = 25 °C
10
VGS = 2 V
4 TC = 125 °C TC = - 55 °C 0
5
2
VGS = 1.5 V 0 0 0.5 1 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) 3
0
0.5 1 1.5 2 VGS - Gate-to-Source Voltage (V)
2.5
Output Characteristics
0.20 VGS = 2 V 0.16
RDS(on) - On-Resistance (Ω) C - Capacitance (pF) 2400
Transfer Characteristics
2000
1600 Ciss 1200
0.12
0.08
VGS = 2.5 V VGS = 4.5 V
800
0.04
400
Coss Crss 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 30
0.00 0 5 10 ID - Drain Current (A) 15 20
0
On-Resistance vs. Drain Current and Gate Voltage
10 ID = 1.5 A VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V
Capacitance
1.6 RDS(on) - On-Resistance (Normalized) ID = 1.5 A; VGS = 4.5 V ID = 1.5 A; VGS = 2.5 V 1.2
1.4
6 VDS = 7.5 V 4 VDS = 24 V
1.0
ID = 0.5 A; VGS = 2 V
2
0.8
0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) 30 35
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 63355 S11-1385-Rev. A, 11-Jul-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.16 ID = 1.5 A RDS(on) - On-Resistance (Ω) 0.12
IS - Source Current (A)
10
TJ = 150 °C
0.08 TJ = 125 °C
1
TJ = 25 °C
0.04
TJ = 25 °C
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.0 0.9 0.8
20 30
On-Resistance vs. Gate-to-Source Voltage
25
0.7 0.6 0.5 0.4 0.3 - 50
Power (W)
VGS(th) (V)
15
ID = 250 μA
10
5
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1
TJ - Temperature (°C)
1 Pulse (s)
10
100
1000
Threshold Voltage
100 Limited by RDS(on)* 10 ID - Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100 us 1 1 ms 10 ms 0.1 TA = 25 °C BVDSS Limited 100 ms 1s 10 s DC
0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100
Safe Operating Area, Junction-to-Ambient
Document Number: 63355 S11-1385-Rev. A, 11-Jul-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
16
15
12
Power Dissipation (W)
0 25 50 75 100 TC - Case Temperature (°C) 125 150
12 ID - Drain Current (A)
9
8
6
4
3
0
0 25 50 75 100 125 150 T C - Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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Document Number: 63355 S11-1385-Rev. A, 11-Jul-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05
Notes: P DM t1
0.02 Single Pulse
t2 1. Duty Cycle, D =
t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted
0.01 10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1
0.05 0.02 Single Pulse 0.1 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 63355 S11-1385-Rev. A, 11-Jul-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8497DB
Vishay Siliconix
PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 x 3, 0.5 mm PITCH)
6 x Ø 0.24 to 0.26 Note 3 Solder Mask ~ Ø 0.25 A 1 e B C A2 Bump Note 2 e e Recommended Land 6xØb D S S s s s s e E e D e D S G
2
8497
XXX
Mark on Backside of Die
Notes (unless otherwise specified): 1. All dimensions are in millimeters. 2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter 0.30 to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of pin 1.
·
Dim. A A1 A2 b e s D E
Millimetersa Min. 0.510 0.220 0.290 0.300 0.230 0.920 1.420 Nom. 0.575 0.250 0.300 0.310 0.500 0.250 0.960 1.460 0.270 1.000 1.500 0.0090 0.0362 0.0559 Max. 0.590 0.280 0.310 0.320 Min. 0.0201 0.0087 0.0114 0.0118
A1
A
Inches Nom. 0.0224 0.0098 0.0118 0.0122 0.0197 0.0098 0.0378 0.0575 0.0106 0.0394 0.0591 Max. 0.0232 0.0110 0.0122 0.0126
Note: a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63355.
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Document Number: 63355 S11-1385-Rev. A, 11-Jul-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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