SI8499DB

Si8499DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.032 at VGS = - 4.5 V - 20 0.046 at VGS = - 2.5 V 0.065 at VGS = - 2.0 V 0.120 at VGS = - 1.8 V ID (A)e - 16 - 14.3 - 12 - 2.5 14.5 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra-small 1.5 mm x 1 mm Maximum Outline • Ultra-thin 0.59 Maximum Height • Compliant to RoHS Directive 2002/95/EC APPLICATIONS MICRO FOOT Bump Side View Backside View • Low On-Resistance Load Switch, Charger Switch and Battery Switch for Portable Devices - Low Power Consumption - Increased Battery Life S S 2 G 1 8499 XXX S 3 S 6 G D 4 D 5 Device Marking: 8499 xxx = Date/Lot Traceability Code Ordering Information: Si8499DB-T2-E1 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Package Reflow Conditionsc IR/Convection Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. Case is defined as the top surface of the package. e. Based on TC = 25 °C. Document Number: 65906 S10-0543-Rev. A, 08-Mar-10 www.vishay.com 1 TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 20 ± 12 - 16 - 13.7 - 7.8a, b - 6.3a, b - 20 - 10.8 - 2.3a, b 13 8.4 2.77a, b 1.77a, b - 55 to 150 260 °C W A Unit V Si8499DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, b Symbol RthJA Steady State RthJC Typical 37 7 Maximum 45 9.5 Unit °C/W Maximum Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 85 °C/W. c. Case is defined as top surface of the package. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 70 °C VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1.5 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 1.5 A VGS = - 2.0 V, ID = - 1 A VGS = - 1.8 V, ID = - 0.5 A Forward Transconductancea Dynamic b Symbol Test Conditions Min. - 20 Typ. Max. Unit V - 20 2.2 - 0.5 - 1.3 ± 100 -1 - 10 -5 0.026 0.036 0.048 0.060 10 0.032 0.046 0.065 0.120 mV/°C V nA µA A Ω gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = - 10 V, ID = - 1.5 A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1300 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 5 V, ID = - 1.5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 1.5 A VGS = - 0.1 V, f = 1 MHz VDD = - 10 V, RL = 6.7 Ω ID ≅ - 1.5 A, VGEN = - 4.5 V, Rg = 1 Ω 250 200 20 14.5 2.0 4.1 7 20 25 50 30 7 VDD = - 10 V, RL = 6.7 Ω ID ≅ - 1.5 A, VGEN = - 10 V, Rg = 1 Ω 10 55 30 40 50 100 60 15 20 110 60 ns Ω 30 22 nC pF www.vishay.com 2 Document Number: 65906 S10-0543-Rev. A, 08-Mar-10 Si8499DB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C IS = - 1.5 A, VGS = 0 V - 0.8 40 22 15 25 TC = 25 °C - 10.8 - 20 - 1.2 80 45 A V ns nC ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65906 S10-0543-Rev. A, 08-Mar-10 www.vishay.com 3 Si8499DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 5 V GS = 5 V thru 2.5 V 15 I D - Drain Current (A) I D - Drain Current (A) V GS = 2 V 4 3 10 2 T C = 25 °C 1 T C = 125 °C T C = - 55 °C 5 V GS = 1.5 V V GS = 1 V 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0 0.0 0.5 1.0 1.5 2.0 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics 0.20 2000 Transfer Characteristics R DS(on) - On-Resistance (Ω) V GS = 1.8 V 0.15 C - Capacitance (pF) 1600 Ciss 1200 0.10 V GS = 2 V 800 V GS = 2.5 V 0.05 400 Crss 0.00 0 5 10 ID - Drain Current (A) V GS = 4.5 V 15 20 0 0 4 Coss 8 12 16 20 V DS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 1.5 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance V DS = 10 V 6 V DS = 5 V V DS = 16 V 4 1.2 (Normalized) 1.1 1.0 1.4 1.3 Capacitance V GS = 4.5 V; I D = 1 A V GS = 2 V; I D = 1 A V GS = 1.8 V; I D = 0.5 A 0.9 0.8 2 0 0 5 10 15 20 25 30 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 65906 S10-0543-Rev. A, 08-Mar-10 Si8499DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.12 ID = - 1.5 A 0.10 T J = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 0.08 0.06 1 T J = 25 °C 0.04 T J = 25 °C T J = 125 °C 0.02 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.0 30 On-Resistance vs. Gate-to-Source Voltage 0.9 ID = 250 μA 0.8 VGS(th) (V) Power (W) 25 20 0.7 15 0.6 10 0.5 5 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 T J - Temperature (°C) Threshold Voltage 100 Limited by R DS(on)* 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 100 μs 1 ms 10 ms 100 ms 1 s, 10 s DC BVDSS Limited 0.01 0.1 1 0.1 TA = 25 °C Single Pulse 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65906 S10-0543-Rev. A, 08-Mar-10 www.vishay.com 5 Si8499DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 15 16 I D - Drain Current (A) Package Limited 12 Power Dissipation (W) 12 9 8 6 4 3 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T C - Case Temperature (°C) T C - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65906 S10-0543-Rev. A, 08-Mar-10 Si8499DB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: P DM t1 0.02 Single Pulse 0.01 10-4 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65906 S10-0543-Rev. A, 08-Mar-10 www.vishay.com 7 Si8499DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 x 3, 0.5 mm PITCH) 6 x Ø 0.24 to 0.26 Note 3 Solder Mask ~ Ø 0.25 A 1 e B C A2 Bump Note 2 e e Recommended Land 6xØb D S S s s s s e E e D e D S G 2 8499 XXX Mark on Backside of Die Notes (Unless Otherwise Specified): 1. All dimensions are in millimeters. 2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter ∅ 0.30 to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of Pin 1. · Dim. A A1 A2 b e s D E Millimetersa Min. 0.510 0.220 0.290 0.300 0.230 0.920 1.420 Nom. 0.575 0.250 0.300 0.310 0.500 0.250 0.960 1.460 0.270 1.000 1.500 0.0090 0.0362 0.0559 Max. 0.590 0.280 0.310 0.320 Min. 0.0201 0.0087 0.0114 0.0118 A1 A Inches Nom. 0.0224 0.0098 0.0118 0.0122 0.0197 0.0098 0.0378 0.0575 0.0106 0.0394 0.0591 Max. 0.0232 0.0110 0.0122 0.0126 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65906. www.vishay.com 8 Document Number: 65906 S10-0543-Rev. A, 08-Mar-10 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1