SI8800EDB

New Product Si8800EDB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.080 at VGS = 4.5 V 20 0.090 at VGS = 2.5 V 0.105 at VGS = 1.8 V 0.150 at VGS = 1.5 V ID (A)a 2.8 2.6 2.4 2.0 3.2 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Small 0.8 mm x 0.8 mm Outline • Ultra Thin 0.357 mm Height • Typical ESD Protection 1500 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS MICRO FOOT Bump Side View Backside View S 2 G 1 • Portable Devices such as Cell Phones, Smart Phones and MP3 Players - Load Switch - Small Signal Switch R G D 800 XXX S 3 D 4 Device Marking: 800 xxx = Date/Lot Traceability Code Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current (TJ = 150 °C) TA = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TA = 25 °C TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c Symbol VDS VGS Limit 20 ±8 2.8a 2.2a 2.0b 1.6b Unit V ID A IDM IS 15 0.7a 0.4b 0.9a 0.6a 0.5b 0.3b - 55 to 150 260 PD W TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d Maximum Junction-to-Ambientb, e t≤5s Symbol RthJA Typical 105 200 Maximum 135 260 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. Maximum under steady state conditions is 185 °C/W. e. Maximum under steady state conditions is 330 °C/W. Document Number: 66700 S10-1046-Rev. A, 03-May-10 www.vishay.com 1 New Product Si8800EDB Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.0 A Drain-Source On-State Resistancea RDS(on) VGS = 2.5 V, ID = 1.0 A VGS = 1.8 V, ID = 1.0 A VGS = 1.5 V, ID = 0.5 A Forward Transconductancea Dynamic b Symbol Test Conditions Min. 20 Typ. Max. Unit V 18 - 2.3 0.4 1.0 ± 0.5 ±6 1 10 10 0.066 0.072 0.082 0.095 10 5.5 3.2 0.42 0.5 1.0 65 130 170 1800 700 50 80 2200 700 0.7 15 1.0 13 5 8 5 1.5 25 10 85 900 350 25 8.3 5.0 0.080 0.090 0.105 0.150 mV/°C V µA A Ω gfs VDS = 10 V, ID = 1.0 A VDS = 10 V, VGS = 8 V, ID = 1.0 A VDS = 10 V, VGS = 4.5 V, ID = 1.0 A f = 1 MHz VDD = 10 V, RL = 10 Ω ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω S Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb nC kΩ ns VDD = 10 V, RL = 10 Ω ID ≅ 1.0 A, VGEN = 8 V, Rg = 1 Ω 40 1100 350 TC = 25 °C IS = 1.0 A, VGS = 0 V A V ns nC ns IF = 1.0 A, dI/dt = 100 A/µs, TJ = 25 °C Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66700 S10-1046-Rev. A, 03-May-10 New Product Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 10-1 1.2 I GSS - Gate Current (mA) T J = 25 °C 0.9 I GSS - Gate Current (A) 10-3 10-5 T J = 150 °C 10-7 T J = 25 °C 0.6 0.3 10-9 0.0 0 3 6 9 12 15 10-11 0 3 6 9 12 15 V GS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 V GS = 5 V thru 2 V 12 I D - Drain Current (A) I D - Drain Current (A) 4 5 Gate Current vs. Gate-Source Voltage 9 V GS = 1.5 V 3 6 2 T C = 25 °C 1 T C = 125 °C 3 V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 T C = - 55 °C 0.3 0.6 0.9 1.2 1.5 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics 0.15 VGS - Gate-to-Source Voltage (V) 8 ID = 1 A R DS(on) - On-Resistance (Ω) 0.12 V GS = 1.5 V 0.09 V GS = 2.5 V 0.06 V GS = 4.5 V 0.03 V GS = 1.8 V 6 Transfer Characteristics V DS = 5 V V DS = 10 V 4 V DS = 16 V 2 0.00 0 3 6 9 12 15 0 0 1 2 3 4 5 6 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge Document Number: 66700 S10-1046-Rev. A, 03-May-10 www.vishay.com 3 New Product Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 1.4 R DS(on) - On-Resistance 1.3 (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 - 50 0.1 0.0 V GS = 1.5 V; I D = 0.5 A V GS = 4.5 V, V GS = 2.5 V, V GS = 1.8 V; I D = 1 A 10 I S - Source Current (A) T J = 150 °C T J = 25 °C 1 - 25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 T J - Junction Temperature (°C) V SD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.14 0.8 Source-Drain Diode Forward Voltage R DS(on) - On-Resistance (Ω) 0.12 ID = 1.5 A; T J = 125 °C VGS(th) (V) 0.10 0.7 0.6 ID = 250 μA 0.5 0.08 ID = 1.5 A; T J = 25 °C 0.06 ID = 0.5 A; T J = 125 °C 0.4 ID = 0.5 A; T J = 25 °C 0.3 0.04 0 1 2 3 4 5 0.2 - 50 - 25 0 25 50 75 100 125 150 V GS - Gate-to-Source Voltage (V) T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage 14 12 10 Power (W) 8 6 4 2 0 0.001 Threshold Voltage 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power (Junction-to-Ambient) www.vishay.com 4 Document Number: 66700 S10-1046-Rev. A, 03-May-10 New Product Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on) * I D - Drain Current (A) 10 100 μs 1 1 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 10 ms 100 ms, 1 s 10 s, DC 0.01 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 3.0 0.8 2.5 I D - Drain Current (A) Power Dissipation (W) 0.6 2.0 1.5 0.4 1.0 0.2 0.5 0.0 0 25 50 75 100 125 150 0.0 25 50 75 100 125 150 T A - Ambient Temperature (°C) T A - Ambient Temperature (°C) Current Derating* Note: When mounted on 1" x 1" FR4 with full copper. Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66700 S10-1046-Rev. A, 03-May-10 www.vishay.com 5 New Product Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 185 °C/W 3. T JM - T A = PDMZthJA(t) Notes: Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 2. Per Unit Base = R thJA = 330 °C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper) www.vishay.com 6 Document Number: 66700 S10-1046-Rev. A, 03-May-10 New Product Si8800EDB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH) 4xØb 800 XXX s Mark on Backside of die S S D G s e D 4 x Ø 0.205 to 0.225 Note 4 Solder Mask ~ Ø 0.215 2 3 e A2 D A1 A 1 e 4 Recommended Land Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø 0.165 mm to Ø 0.185 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of pin 1. · Dim. A A1 A2 b e s D Millimetersa Min. 0.314 0.127 0.187 0.165 0.180 0.760 Nom. 0.357 0.157 0.200 0.175 0.400 0.200 0.800 0.220 0.840 0.0070 0.0299 Max. 0.400 0.187 0.213 0.185 Min. 0.0124 0.0050 0.0074 0.0064 Inches Nom. 0.0141 0.0062 0.0079 0.0068 0.0157 0.0078 0.0314 0.0086 0.0330 Max. 0.0157 0.0074 0.0084 0.0072 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66700. Document Number: 66700 S10-1046-Rev. A, 03-May-10 e www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1