SI8802DB-T2-E1

New Product Si8802DB Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.054 at VGS = 4.5 V 0.060 at VGS = 2.5 V 8 0.068 at VGS = 1.8 V 0.086 at VGS = 1.5 V 0.135 at VGS = 1.2 V MICRO FOOT Bump Side View Backside View ID (A)a 3.5 3.3 3.1 2.3 1.0 Qg (Typ.) 4.3 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Small 0.8 mm x 0.8 mm Outline Area • Low 0.4 mm max. profile • Low On-Resistance • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch with Low Voltage Drop • Load Switch for 1.2 V, 1.5 V, 1.8 V Power Lines • Smart Phones, Tablet PCs, Portable Media Players D S 2 G 1 802 XXX S 3 D 4 G N-Channel MOSFET S Device Marking: 802 xxx = Date/Lot Traceability Code Ordering Information: Si8802DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current (TJ = 150 °C) TA = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TA = 25 °C TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c Symbol VDS VGS Limit 8 ±5 3.5a 2.8a 3.0b 2.4b Unit V ID A IDM IS 15 0.7a 0.4b 0.9a 0.6a 0.5b 0.3b - 55 to 150 260 PD W TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, d Maximum Junction-to-Ambientb, e t5s Symbol RthJA Typical 105 200 Maximum 135 260 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. Maximum under steady state conditions is 185 °C/W. e. Maximum under steady state conditions is 330 °C/W. Document Number: 67999 S11-1386-Rev. A, 11-Jul-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si8802DB Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 5 V VDS = 8 V, VGS = 0 V VDS = 8 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 4.5 V VGS 4.5 V, ID = 1 A VGS 2.5 V, ID = 1 A Drain-Source On-State Resistancea RDS(on) VGS 1.8 V, ID = 0.5 A VGS 1.5 V, ID = 0.2 A VGS 1.2 V, ID = 0.1 A Forward Transconductance Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 1 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 1 A, VGS = 0 V 0.7 20 5 14 60 TA = 25 °C 0.7 15 1.2 40 10 A V ns nC ns Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 4 V, RL = 4  ID  1 A, VGEN = 4.5 V, Rg = 1  f = 1 MHz VDS = 4 V, VGS = 4.5 V, ID = 1 A 4.3 0.44 0.72 3.5 5 15 22 7 10 30 40 15 ns  6.5 nC a Symbol Test Conditions Min. 8 Typ. Max. Unit V 7 - 2.1 0.35 0.7 ± 100 1 10 10 0.044 0.049 0.055 0.060 0.080 13 0.054 0.060 0.068 0.086 0.135 mV/°C V nA µA A  gfs VDS = 4 V, ID = 1 A S Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67999 S11-1386-Rev. A, 11-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si8802DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 VGS = 5 V thru 2 V 12 8 ID - Drain Current (A) 10 ID - Drain Current (A) 9 VGS = 1.5 V 6 6 4 TC = 25 °C TC = 125 °C TC = - 55 °C 3 VGS = 1 V 0 0 0.5 1 1.5 2 2.5 VDS - Drain-to-Source Voltage (V) 3 2 0 0.0 0.3 0.6 0.9 1.2 VGS - Gate-to-Source Voltage (V) 1.5 Output Characteristics 600 Transfer Characteristics 0.16 V GS = 1.2 V RDS(on) - On-Resistance (Ω) 0.12 500 Ciss C - Capacitance (pF) V GS = 1.5 V 0.08 VGS = 1.8 V 400 300 200 Coss 100 Crss 0 0.04 VGS = 4.5 V VGS = 2.5 V 0 0 3 6 9 12 15 ID - Drain Current (A) 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 RDS(on) - On-Resistance (Normalized) 1.4 ID = 1 A VGS - Gate-to-Source Voltage (V) 4 VDS = 4 V 3 VDS = 2 V VDS = 6.4 V 2 VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1 A 1.2 VGS = 1.5 V, ID = 0.2 A 1.0 VGS = 1.2 V, ID = 0.1 A 0.8 1 0 0 1 2 3 4 Qg - Total Gate Charge (nC) 5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 67999 S11-1386-Rev. A, 11-Jul-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si8802DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.15 ID = 1 A 0.12 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.09 TJ = 150 °C 1 TJ = 25 °C 0.06 TJ = 125 °C 0.03 TJ = 25 °C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.8 On-Resistance vs. Gate-to-Source Voltage 14 12 0.7 10 VGS(th) (V) 0.6 ID = 250 μA 0.5 Power (W) 8 6 4 0.4 2 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* 10 ID - Drain Current (A) Single Pulse Power (Junction-to-Ambient) 100 μs 1 ms 1 10 ms 0.1 10 s, 1s, 100 ms TA = 25 °C DC BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 67999 S11-1386-Rev. A, 11-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si8802DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.5 3 0.8 2 1.5 1 0.5 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Dissipation (W) ID - Drain Current (A) 2.5 0.6 0.4 0.2 0.0 25 50 75 100 125 150 T A - Ambient Temperature (°C) Current Derating* Note: When mounted on 1" x 1" FR4 with full copper. Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67999 S11-1386-Rev. A, 11-Jul-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si8802DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 185 °C/W Notes: Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 3. T JM - T A = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 2. Per Unit Base = R thJA = 330 °C/W Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with minimum copper) www.vishay.com 6 Document Number: 67999 S11-1386-Rev. A, 11-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si8802DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT 0.8 mm x 0.8 mm: 4-BUMP (2 x 2, 0.4 mm PITCH) 4xØb 802 XXX s Mark on Backside of die S S D G s e D 4 x Ø 0.205 to 0.225 Note 4 Solder Mask ~ Ø 0.215 2 3 e A2 D A1 A 1 e 4 Recommended Land Notes (Unless otherwise specified): 1. All dimensions are in millimeters. 2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.5Ag/0.7Cu with diameter Ø0.165 mm to Ø 0.185 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of pin 1. · Dim. A A1 A2 b e s D Millimetersa Min. 0.314 0.127 0.187 0.165 0.180 0.760 Nom. 0.357 0.157 0.200 0.175 0.400 0.200 0.800 0.220 0.840 0.0070 0.0299 Max. 0.400 0.187 0.213 0.185 Min. 0.0124 0.0050 0.0074 0.0064 Inches Nom. 0.0141 0.0062 0.0079 0.0068 0.0157 0.0078 0.0314 0.0086 0.0330 Max. 0.0157 0.0074 0.0084 0.0072 Notes: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67999. Document Number: 67999 S11-1386-Rev. A, 11-Jul-11 e www.vishay.com 7 This document is subject to change without notice. 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