SI9182DB

Si9181DB/Si9182DB Vishay Siliconix Si9181DB/Si9182DB Demonstration Board FEATURES D 2-V to 6-V Input Voltages Range D Uses Low-ESR Ceramic Capacitors At The Input and Output D Fast Load and Line Transient Response – On Board Load Transient Response Test Circuit D 100-mVrms Noise With Noise Bypass Capacitor – Probe Clip Provision For Accurate Noise Measurement D 1-mA Maximum Shutdown Current. D Built In Short Circuit and Thermal Protection D Out of Regulation Error Flag D Fixed 1.5-V, 1.8-V, 2.0-V, 2.5-V, 2.8-V, 3.0-V 3.8-V, 5.0-V, Or Adjustable Voltage Versions Available D Provision To Measure The Ground Current D Si9181—Low 150-mV Dropout At 350-mA Load – 500-mA Peak Current Capability – TSSOP-8 Package With 833-mW Power Dissipation D Si9182—Low 105 mV Dropout At 250-mA Load – 500-mA Peak Current Capability – Space Saving MSOP-8 Package With 666-mW Power Dissipation DESCRIPTION The Si9181DQ/Si9182DH are the extremely low drop CMOS linear regulator ICs operating from 2-V to 6-V input. These devices offer ultra-low ground current and low dropout to extend the battery life in portable electronics. The demo boards are designed to verify different features easily and quickly. The input and output capacitors are selected to meet the specified noise and transient requirement. The device features the use of low ESR, low cost multi-layer ceramic capacitors. The Si9181DB/Si9182DB are provided with a MOSFET switch along with other components to measure the load transient response. The slew-rate of the switching load can be adjusted easily to simulate the actual load conditions. Provisions are made to measure the ground current and output noise accurately. The demonstration board uses surface mount and through-hole components and is fully assembled and tested for quick evaluation. The test points are provided for the closed-loop response measurement. Included in this document are the Bill-Of-Materials, Schematics, PCB Layout of the Demo Boards and actual waveforms/graphs. The demonstration board layout is available in Gerber file format. Please contact your Vishay Siliconix sales representative or distributor for a copy. ORDERING INFORMATION: Si9181DB-A/Si9182DB-A . . . . . . . . . . . . Si9181DB-B/Si9182DB-B . . . . . . . . . . . . Si9181DB-C/Si9182DB-C . . . . . . . . . . . . Si9181DB-D/Si9182DB-D . . . . . . . . . . . . Si9181DB-E/Si9182DB-E . . . . . . . . . . . . Si9181DB-F/Si9182DB-F . . . . . . . . . . . . . Si9181DB-G/Si9182DB-G . . . . . . . . . . . . (Adjustable Output) (2.0-VOUT) (2.5-VOUT) (3.0-VOUT) (3.3-VOUT) (5.0-VOUT) (1.8-VOUT) www.vishay.com Document Number: 71306 26-Sep-00 1 Si9181DB/Si9182DB Vishay Siliconix POWER UP CHECK LIST AND OPERATION Visually inspect the PCB to be sure that all the components are intact and no foreign substance is lying on the board. 1 2 3 4 5 Insert jumper JP2 and remove jumper JP3. Insert JP1 to EN position. Load the output to the rated load current. Increase the input from 0 V slowly, while monitoring the output. Note the regulated output voltage. Increase the input to 6 V and check the line regulation. Vary the load from 0 to 350 mA (Si9181DB) and 0 to 250 mA (Si9182DB) and check the load regulation. Follow the “Typical Waveforms and Performance” to verify the dropout, transient response ground current and output noise. LOAD TRANSIENT RESPONSE The Si9181DB and Si9182DB are provided with additional circuit to measure the load step response from 1 to 150 mA with 2-mSec load rise/fall times. The load step and slew-rate can be easily changed by selecting R4, R5, R7 and R8. Remove the external load from the output, insert the jumper JP3 and apply 5-Vpk-pk/5-kHz square wave signal at P5 (TRAN). Remove the oscilloscope probe-cap and insert the probe into the probe-clip. Set the oscilloscope to 10 mV/div and 5-mSec/div. Refer to Figures 3 through 5 for typical load transient waveform. 6 GROUND CURRENT Remove the jumper JP2 and insert micro-ampere meter. Use thick and short wires to connect the meter. Vary the load to measure the ground current at all loads. (See Figure 2.) DROPOUT VOLTAGE The dropout voltage is defined as the input to output voltage differential measured, when the output drops by 100 mV from its normal value. The output voltage is nominal at VIN equal to VOUT + 1. The dropout voltage is different at different output. Plots in Figure 1 and Figure 3 show the typical dropouts measured on bench at 25_C ambient temperature. Dropout vs. VOUT 250 Ground Current Measurement mA–meter 200 Dropout Voltage (mV) VIN 150 Si9181DB, IOUT = 350 mA 100 GND 50 Si9182DB, IOUT = 250 mA Si9181DB/Si9182DB 0 1.5 GND LOAD JP2 VOUT 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VOUT (V) FIGURE 1. Dropout Voltage Si9181DB/Si9182DB www.vishay.com S FaxBack 408-970-5600 FIGURE 2. Ground Current Measurement Document Number: 71306 26-Sep-00 2 Si9181DB/Si9182DB Vishay Siliconix TYPICAL WAVEFORMS VOUT 10 mV/div VOUT 10 mV/div ILOAD 100 mA/div ILOAD 100 mA/div 5.00 ms/div VOUT = 3.3 V COUT = 2.2 mF ILOAD = 1 to 150 mA trise = 2 msec 5.00 ms/div VOUT = 3.3 V COUT = 2.2 mF ILOAD = 150 to 1 mA tfall = 2 msec FIGURE 3. Load Transient Response-1 (Si9181DB) FIGURE 4. Load Transient Response-2 (Si9181DB) VOUT 10 mV/div VOUT 10 mV/div ILOAD 100 mA/div ILOAD 100 mA/div 5.00 ms/div VOUT = 3.3 V COUT = 2.2 mF ILOAD = 1 to 150 mA trise = 2 msec 5.00 ms/div VOUT = 3.3 V COUT = 2.2 mF ILOAD = 150 to 1 mA tfall = 2 msec FIGURE 5. Load Transient Response-1 (Si9182DB) FIGURE 6. Load Transient Response-2 (Si9182DB) Document Number: 71306 26-Sep-00 www.vishay.com 3 Si9181DB/Si9182DB Vishay Siliconix SCHEMATIC, PCB LAYOUT AND BILL OF MATERIAL (SI9181) Si9181 DEMO BOARD JP1 EN 1 U1 1 C2 0.1 mF C3 0.1 mF P1 1 VIN 2 V–6 V 1 JP2 3 GND SENSE/VADJ 2 4 VIN VOUT 6 R2 R3 1 MΩ JP3 ERROR P4 5 1 VOUT 350 mA R5 R4 5, 6, 7, 8 C1 10 mF 10 V R1 C4 2.2 mF TJ1 4 1, 2, 3 P2 1 GND R6 100 kΩ Q1 R8 560 D1 LL4154 R7 1 1.30 kΩ C5 0.01 mF SQUAREWAVE D=50% 5 V PK, 5 kHz P6 1 GND P5 TRANSIENT CNOISE SD 8 P3 2 DELAY ERROR 7 1 2 SD 3 Si9181 (TSSOP–8) Si4410DY LDO Version Output A B C D E F G R1 R2 R4 TBD 13.5 16.9 20.0 22.1 33.5 12.1 R5 TBD 2.0 k 2.49 k 3.01 k 3.32 k 4.99 k 1.82 k Adjustable 124 k TBD 2.0 V 2.5 V 3.0 V 3.3 V 5.0 V 1.8 V Open Open Open Open Open Open 0 0 0 0 0 0 FIGURE 7. Demo Board—Si9181 www.vishay.com S FaxBack 408-970-5600 4 Document Number: 71306 26-Sep-00 Si9181DB/Si9182DB Vishay Siliconix FIGURE 8. Silk Screen—Si9181 FIGURE 9. Top Layer—Si9181 FIGURE 10. Bottom Layer—Si9181 Document Number: 71306 26-Sep-00 www.vishay.com 5 Si9181DB/Si9182DB Vishay Siliconix BILL OF MATERIALS Si9181 Item 1 2 3 4 5 6 7 8 Qty 1 1 1 1 1 1 1 1 Designator R1 R2 R3 R4 R5 R6 R7 R8 Part Type TBD* TBD* 1M TBD* TBD* 100 k 1.30 k 560 Description RES, 1%, 1/8 W RES, 1%, 1/8 W RES, 1%, 1/8 W RES, 1%, 1/4 W RES, 1%, 1/8 W RES, 1%, 1/8 W RES, 1%, 1/8 W RES, 1%, 1/8 W Footprint 0805 0805 0805 1206 0805 0805 0805 0805 Vendor Part # TBD CRCW08051004FRT1 TBD TBD TBD CRCW08051003FRT1 CRCW08051301FRT1 CRCW08055600FRT1 Manufacturer Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale 9 10 11 12 1 2 1 1 C1 C2, C3 C4 C5 10 mF 0.1 mF 2.2 mF 0.01 mF CAP, CER, X5R, 10 V, 10% CAP, CER, X7R, 50 V, 10% CAP, CER, X5R, 6.3 V, 10% CAP, CER, X7R, 50 V, 10% 1210 0805 0805 0805 GRM42-2 X5R 106K 10 VJ0805Y104KXAAT GRM40X5R225K6.3 VJ0805Y102KXAAT Murata Vishay Vitramon Murata Vishay Vitramon 13 1 Q1 Si4410DY n-MOSFET, 30 V SO-8 Si4410DY Vishay Siliconix 14 1 U1 Si9181 Power IC TSSOP-8 Si9181 Vishay Siliconix 15 1 D1 LL4154 Diode, 35 V, 150 mA MINIMELF LL4154 VISHAY LITEON 16 17 18 19 1 1 2 6 TJ1 JP1 JP2, JP3 P1 TO P6 Test Jack Jumper Jumper Power, GND, TP For 0.135’ Dia Probe 3-Pin Header 2-Pin Header 1-Pin Header TJ SIP3 SIP2 TP1 131-4244-00 Jensen Multi-Source Multi-Source Multi-Source *Refer to Si9181 Schematic, Figure 7. www.vishay.com S FaxBack 408-970-5600 6 Document Number: 71306 26-Sep-00 Si9181DB/Si9182DB Vishay Siliconix SCHEMATIC, PCB LAYOUT AND BILL OF MATERIAL (SI9182) Si9182 DEMO BOARD JP1 EN 1 U1 1 C2 0.1 mF C3 0.1 mF P1 1 VIN 2 V–6 V 1 JP2 3 GND SENSE/VADJ 2 4 VIN VOUT 6 R2 R3 1 MΩ JP3 ERROR P4 5 1 VOUT 250 mA R5 R4 5, 6, 7, 8 C1 10 mF 10 V R1 C4 2.2 mF TJ1 4 1, 2, 3 P2 1 GND R6 100 kΩ Q1 P5 TRANSIENT R7 1 1.30 kΩ C5 0.01 mF SQUAREWAVE D=50% 5 V PK, 5 kHz P6 1 GND CNOISE SD 8 P3 2 DELAY ERROR 7 1 2 SD 3 Si9182 (MSOP–8) Si4410DY LDO Version Output A B C D E F G R1 R2 R4 TBD 13.5 16.9 20.0 22.1 33.5 12.1 R5 TBD 2.0 k 2.49 k 3.01 k 3.32 k 4.99 k 1.82 k Adjustable 124 k TBD 2.0 V 2.5 V 3.0 V 3.3 V 5.0 V 1.8 V Open Open Open Open Open Open 0 0 0 0 0 0 FIGURE 11. Demo Board—Si9182 Document Number: 71306 26-Sep-00 www.vishay.com 7 Si9181DB/Si9182DB Vishay Siliconix BILL OF MATERIALS Si9182 Item 1 2 3 4 5 6 7 Qty 1 1 1 1 1 1 1 Designator R1 R2 R3 R4 R5 R6 R7 Part Type TBD* TBD* 1M TBD* TBD* 100 k 1.30 k Description RES, 1%, 1/8 W RES, 1%, 1/8 W RES, 1%, 1/8 W RES, 1%, 1/4 W RES, 1%, 1/8 W RES, 1%, 1/8 W RES, 1%, 1/8 W Footprint 0805 0805 0805 1206 0805 0805 0805 Vendor Part # TBD TBD CRCW08051005FRT1 TBD TBD CRCW08051003FRT1 CRCW08051301FRT1 Manufacturer Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale Vishay Dale 8 9 10 11 1 2 1 1 C1 C2, C3 C4 C5 10 mF 0.1 mF 2.2 mF 0.01 mF CAP, CER, X5R, 10 V, 10% CAP, CER, X7R, 50 V, 10% CAP, CER, X5R, 6.3 V, 10% CAP, CER, X7R, 50 V, 10% 1210 0805 0805 0805 GRM42-2X5R106K10 VJ0805Y104KXAAT GRM40X5R225K6.3 VJ0805Y102KXAAT Murata Vishay Vitramon Murata Vishay Vitramon 12 1 Q1 Si4410DY n-MOSFET, 30 V SO-8 Si4410DY Vishay Siliconix 13 1 U1 Si9182 300 mA LDO MSOP-8 Si9182 Vishay Siliconix 14 15 16 17 1 1 2 6 TJ1 JP1 JP2, JP3 P1 to P6 Test Jack Jumper Jumper Power, GND, TP For 0.135’ Dia Probe 3-Pin Header 2-Pin Header 1-Pin Header TJ SIP3 SIP2 TP1 131-4244-00 Jensen Multi-Source Multi-Source Multi-Source *Refer to Si9182 Schematic, Figure 11. www.vishay.com S FaxBack 408-970-5600 8 Document Number: 71306 26-Sep-00 Si9181DB/Si9182DB Vishay Siliconix FIGURE 12. Silk Screen—Si9182 FIGURE 13. Top Layer—Si9182 FIGURE 14. Bottom Layer—Si9182 Document Number: 71306 26-Sep-00 www.vishay.com 9