SI9400DY

Si9400DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.25 @ VGS = –10 V 0.40 @ VGS = –4.5 V ID (A) "2.5 "2.0 S S SO-8 NC S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "20 "2.5 "2.0 "10 –2.0 2.5 Unit V A W 1.6 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70119 S-55458—Rev. K, 02-Mar-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 1 Si9400DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb On Resistance Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = 1 A VGS = –4.5 V, ID = 0.5 A VDS = –15 V, ID = –2.5 A IS = –1.25 A, VGS = 0 V –10 0.13 0.22 2.5 –0.8 –1.6 0.25 0.40 –1.0 "100 –2 –25 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2 A, di/dt = 100 A/ms VDD = –10 V, RL = 10 W V, 10 ID ^ –1 A, VGEN = –10 V RG = 6 W A V, VDS = –10 V, VGS = –10 V ID = –2 0 A V V, 2.0 6.8 1.3 1.6 10 12 20 10 69 40 40 90 50 100 ns 25 nC C Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70119 S-55458—Rev. K, 02-Mar-98 Si9400DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10 – 7 V 12 I D – Drain Current (A) 6V I D – Drain Current (A) 8 25_C 6 125_C 10 TC = –55_C Transfer Characteristics 9 5V 6 4 3 4V 3V 2 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 7 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 700 600 r DS(on) – On-Resistance ( Ω ) 0.8 C – Capacitance (pF) 500 400 Coss 300 Capacitance 0.6 0.4 VGS = 4.5 V Ciss 200 100 Crss 0.2 VGS = 10 V 0 0 1 2 3 4 5 0 0 5 10 15 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 Gate Charge 2.0 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) 6 r DS(on) – On-Resistance ( Ω ) (Normalized) 8 VDS =10 V ID = 2 A 1.6 VGS = 10 V ID = 1.0 A 1.2 4 0.8 2 0.4 0 0 2 4 6 8 0 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70119 S-55458—Rev. K, 02-Mar-98 www.vishay.com S FaxBack 408-970-5600 3 Si9400DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.8 On-Resistance vs. Gate-to-Source Voltage 10 I S – Source Current (A) TJ = 150_C r DS(on) – On-Resistance ( Ω ) 0.6 ID = 2.5 A TJ = 25_C 0.4 0.2 1 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 1.0 Threshold Voltage 100 Single Pulse Power 0.5 V GS(th) Variance (V) ID = 250 µA 80 60 0.0 40 –0.5 20 –1 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70119 S-55458—Rev. K, 02-Mar-98