SI9407AEY

Si9407AEY Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) 0.120 @ VGS = –10 V 0.15 @ VGS = –4.5 V ID (A) "3.5 "3.1 SSS SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G DDDD P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –60 "20 "3.5 "3.0 "30 –2.5 3.0 Unit V A W 2.1 –55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70742 S-99445—Rev. C, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 2-1 Si9407AEY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb On Resistance Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –-60 V, VGS = 0 V VDS = –-60 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = 3.5 A VGS = –4.5 V, ID = 3.1 A VDS = –15 V, ID = –3.5 A IS = –2.5 A, VGS = 0 V 8 –1.2 –20 0.120 0.150 –1 "100 –1 –10 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –2.5 A, di/dt = 100 A/ms VDD = –30 V, RL = 30 W V, 30 ID ^ –1 A, VGEN = –10 V RG = 6 W A V, VDS = –30 V VGS = –10 V ID = –3.5 A V, V, 35 18 5 2 8 10 35 12 70 15 20 50 25 100 ns 30 nC C Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70742 S-99445—Rev. C, 29-Nov-99 Si9407AEY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10, 9, 8, 7 V 25 6V 5V 25 30 TC = –55_C 25_C Transfer Characteristics I D – Drain Current (A) 20 I D – Drain Current (A) 20 150_C 15 15 4V 10 10 5 2V 3V 5 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1500 Capacitance r DS(on)– On-Resistance ( W ) 1200 0.15 VGS = 4.5 V 0.10 VGS = 10 V C – Capacitance (pF) 900 Ciss 600 0.05 300 Crss 0.00 0 5 10 15 20 25 30 0 0 10 20 30 Coss 40 50 60 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 VDS = 30 V ID = 3.5 A Gate Charge 2.0 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 8 VGS = 10 V ID = 3.5 A 1.5 6 1.0 4 0.5 2 0 0 4 8 12 16 20 0 –50 –25 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70742 S-99445—Rev. C, 29-Nov-99 www.vishay.com S FaxBack 408-970-5600 2-3 Si9407AEY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on)– On-Resistance ( W ) I S – Source Current (A) 0.15 10 TJ = 175_C TJ = 25_C ID = 3.5 A 0.10 0.05 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.8 50 Single Pulse Power 0.6 40 V GS(th) Variance (V) 0.4 Power (W) ID = 250 mA 0.2 30 20 0.0 10 –0.2 –0.4 –50 –25 0 25 50 75 100 125 150 175 0 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70742 S-99445—Rev. C, 29-Nov-99