SI9410BDY

Si9410BDY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 8.1 6.9 rDS(on) (W) 0.024 @ VGS = 10 V 0.033 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si9410BDY Si9410BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 8.1 Steady State Unit V 6.2 5.0 30 A 1.2 1.5 0.9 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 6.5 2.1 2.5 1.6 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72269 S-31409—Rev. A, 07-Jul-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 40 70 20 Maximum 50 85 24 Unit _C/W 1 Si9410BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 8.1 A VGS = 4.5 V, ID = 6.9 A VDS = 15 V, ID = 8.1 A IS = 2.1 A, VGS = 0 V 30 0.019 0.026 20 0.8 1.2 0.024 0.033 S V 1.0 3.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 8.1 A 15 3.2 2.5 10 15 30 11 25 15 25 45 20 50 ns 23 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 4V 24 30 Transfer Characteristics 18 18 12 12 TC = - 125_C 6 6 3V 0 0.0 25_C 0 0.0 - 55_C 2.5 3.0 3.5 4.0 4.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72269 S-31409—Rev. A, 07-Jul-03 Si9410BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 0.035 0.030 0.025 0.020 0.015 0.010 200 0.005 0.000 0 5 10 15 20 25 30 0 0 Crss 5 10 15 20 25 30 VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 1200 Vishay Siliconix Capacitance 1000 Ciss 800 600 400 Coss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 8.1 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8.1 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 6 9 12 15 1.2 4 1.0 2 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) - On-Resistance ( W ) TJ = 150_C I S - Source Current (A) 0.08 0.06 ID = 8.1 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72269 S-31409—Rev. A, 07-Jul-03 www.vishay.com 3 Si9410BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA - 0.0 Power (W) 40 30 - 0.2 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Safe Operating Area 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 1 P(t) = 10 dc 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72269 S-31409—Rev. A, 07-Jul-03 Si9410BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72269 S-31409—Rev. A, 07-Jul-03 www.vishay.com 5