SI9410BDY_05

Si9410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 8.1 6.9 rDS(on) (W) 0.024 @ VGS = 10 V 0.033 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si9410BDY Si9410BDY-T1 (with Tape and Reel) Si9410BDY—E3 (Lead (Pb)-Free) Si9410BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 8.1 6.5 30 2.1 2.5 1.6 Steady State Unit V 6.2 5.0 A 1.2 1.5 0.9 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72269 S-50153—Rev. B, 31-Jan-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 20 Maximum 50 85 24 Unit _C/W 1 Si9410BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 8.1 A VGS = 4.5 V, ID = 6.9 A VDS = 15 V, ID = 8.1 A IS = 2.1 A, VGS = 0 V 30 0.019 0.026 20 0.8 1.2 0.024 0.033 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W VDS = 15 V, VGS = 10 V, ID = 8.1 A 15 3.2 2.5 10 15 30 11 25 15 25 45 20 50 ns 23 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D − Drain Current (A) I D − Drain Current (A) 4V 24 30 Transfer Characteristics 18 18 12 12 TC = −125_C 6 25_C 0 0.0 −55_C 2.5 3.0 3.5 4.0 4.5 6 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 72269 S-50153—Rev. B, 31-Jan-05 2 Si9410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.040 r DS(on) − On-Resistance ( W ) 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 0 5 10 15 20 25 30 200 0 0 Crss 5 10 15 20 25 30 VGS = 4.5 V VGS = 10 V C − Capacitance (pF) 1200 1000 800 600 400 Capacitance Ciss Coss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 8.1 A 8 rDS(on) − On-Resiistance (Normalized) 1.4 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8.1 A 6 1.2 4 1.0 2 0.8 0 0 3 6 9 12 15 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) − On-Resistance ( W ) TJ = 150_C I S − Source Current (A) 0.08 0.06 ID = 8.1 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72269 S-50153—Rev. B, 31-Jan-05 www.vishay.com 3 Si9410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA −0.0 −0.2 −0.4 −0.6 −0.8 −50 10 Power (W) 30 50 Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 100 Safe Operating Area *rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified P(t) = 1 P(t) = 10 dc 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72269 S-50153—Rev. B, 31-Jan-05 Si9410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72269. Document Number: 72269 S-50153—Rev. B, 31-Jan-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1