SI9410DY

Si9410DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = 10 V 30 0.040 @ VGS = 5 V 0.050 @ VGS = 4.5 V ID (A) 7.0 6.0 5.4 DDDD SO-8 N/C S S G 1 2 3 4 Top View S Ordering Information: Si9410DY Si9410DY-T1 (with Tape and Reel) S 8 7 6 5 D D D D G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 30 "20 7.0 5.8 30 2.8 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70122 S-31060—Rev. M, 26-May-03 www.vishay.com Symbol RthJA Limit 50 Unit _C/W 1 Si9410DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID =7.0 A Drain-Source On-State Resistanceb rDS(on) VGS = 5 V, ID = 4.0 A VGS = 4.5 V, ID = 3.5 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 15 V, ID = 7.0 A IS = 2 A, VGS = 0 V 30 0.024 0.030 0.032 15 0.72 1.1 0.030 0.040 0.050 S V W 1.0 "100 2 25 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2 A, di/dt = 100 A/ms VDD = 25 V, RL = 25 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 7 A 24 2.8 4.6 14 10 46 17 60 30 60 150 140 ns 50 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 70122 S-31060—Rev. M, 26-May-03 Si9410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10, 9, 8, 7, 6, 5 V 25 4V I D - Drain Current (A) 25 30 Transfer Characteristics I D - Drain Current (A) 20 20 15 15 TC = 125_C 25_C - 55_C 0 10 3V 10 5 2V 0 0 2 4 6 8 10 5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.06 2400 Capacitance 0.05 r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 2000 0.04 VGS = 4.5 V 0.03 1600 Ciss 1200 0.02 10 V 800 Coss Crss 0.01 400 0.00 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 15 V ID = 7 A r DS(on) - On-Resistance ( W ) (Normalized) 8 1.6 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7 A V GS - Gate-to-Source Voltage (V) 6 1.2 4 0.8 2 0.4 0 0 5 10 15 20 25 0.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70122 S-31060—Rev. M, 26-May-03 www.vishay.com 3 Si9410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 Source-Drain Diode Forward Voltage 0.30 On-Resistance vs. Gate-to-Source Voltage 0.25 I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) ID = 3.2 A 0.20 0.15 25_C 0.10 0.05 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 70 60 50 Single Pulse Power V GS(th) Variance (V) 0.0 Power (W) - 0.4 20 10 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) 2 1 Duty Cycle = 0.5 0.2 Notes: 40 30 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 2. Per Unit Base = RthJA = 50_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70122 S-31060—Rev. M, 26-May-03 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1