SI9420DY

Si9420DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(ON) (W) 1.0 @ VGS = 10 V ID (A) "1.0 DDDD SO-8 N/C S S G 1 2 3 4 Top View S S 8 7 6 5 D D D D G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A Drain Current (T 150 Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)A Maximum Power DissipationA Power Dissi Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IAS EAS IS PD TJ, Tstg LIMIT 200 "20 "1.0 "0.8 "10 5 1.3 1.0 2.5 W 1.6 –55 to 150 _C mJ A A V UNIT THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-AmbientA Notes A. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70123. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL RthJA LIMIT 50 UNIT _C/W 1 Si9420DY Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) PARAMETER STATIC Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain CurrentB Drain-Source On-State ResistanceB Forward TransconductanceB Diode Forward VoltageB DYNAMICA Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.0 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W ID ^ 1.0 A, VGEN = 10 V, RG = 6 W VDS = 100 V, VGS = 10 V, ID = 1.0 A 8.6 1.5 3.2 7 12 26 15 130 14 24 50 30 ns 16 nC VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS w 10 V, VGS = 10 V VGS = 10 V, ID = 1.0 A VDS = 15 V, ID = 1.0 A IS = 1.0 A, VGS = 0 V 5.0 0.8 1.5 0.7 1.2 1.0 2 2 "100 2 25 V nA mA A W S V SYMBOL TEST CONDITION MIN TYPA MAX UNIT Notes A. Guaranteed by design, not subject to production testing. B. Pulse test; pulse width v 300 ms, duty cycle v 2%. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors 2 Si9420DY Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Output Characteristics 8 VGS = 10, 9 V 8V 6 I D – Drain Current (A) I D – Drain Current (A) 6 7V 8 10 TC = –55_C 25_C Transfer Characteristics 125_C 4 6V 4 2 5V 4V 2 0 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) 0 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) 1.40 On Resistance vs. Drain Current 600 Capacitance r DS(on)– On-Resistance ( W ) 1.20 VGS = 10 V 1.00 C – Capacitance (pF) 500 400 300 Ciss 0.80 200 0.60 100 Crss Coss 0.40 0 2 4 6 ID – Drain Current (A) 0 0 5 10 15 20 25 30 35 VDS – Drain-to-Source Voltage (V) Gate Charge 20 VDS = 100 V ID = 1 A 2.5 On Resistance vs. Junction Temperature VGS = 10 V ID = 1 A V GS – Gate-to-Source Voltage (V) 12 r DS(on)– On-Resistance ( W ) (Normalized) 16 2.0 1.5 8 1.0 4 0.5 0 0 4 8 12 16 0 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors 3 Si9420DY Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) 20 Source Drain Diode Forward Voltage 2.0 On Resistance vs. Gate to Source Voltage 10 I S – Source Current (A) TJ = 150_C r DS(on)– On-Resistance ( W ) 1.5 ID = 1 A 1.0 TJ = 25_C 0.5 1 0 0.5 1.0 1.5 2 VSD – Source-to-Drain Voltage (V) 0 5 6 7 8 9 10 VGS – Gate-to-Source Voltage (V) 1.00 Threshold Voltage 25 Single Pulse Power 0.50 V GS(th) Variance (V) 20 ID = 250 mA Power (W) 15 0.00 10 –0.50 5 –1.00 –50 0 50 TJ – Temperature (_C) 100 150 0 0.01 0.1 1 Time (sec) 10 100 Normalized Thermal Transient Impedance, Junction to Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted t1 t2 1 10 30 Square Wave Pulse Duration (sec) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56996—Rev. G, 03-Aug-98 Siliconix was formerly a division of TEMIC Semiconductors 4