SI9426DY

Si9426DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0135 @ VGS = 4.5 V 0.0160 @ VGS = 2.5 V ID (A) 10 9.3 D SO-8 S S S G 1 2 3 4 Top View S Ordering Information: Si9426DY Si9426DY-T1 (with Tape and Reel) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 20 "8 10 8 30 2.3 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70160 S-03950—Rev. E, 26-May-03 www.vishay.com Symbol RthJA Limit 50 Unit _C/W 1 Si9426DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 10 A VGS = 2.5 V, ID = 8 A VDS = 10 V, ID = 10 A IS = 2.3 A, VGS = 0 V 30 0.0098 0.011 57 0.71 1.2 0.0135 0.0160 0.6 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 1 50 110 150 55 59 VDS = 6 V, VGS = 4.5 V, ID = 10 A 46.5 5.5 13.5 3.9 100 200 300 100 100 ns W 80 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 70160 S-03950—Rev. E, 26-May-03 Si9426DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5, 4.5, 4, 3.5, 3, 2.5, 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 30 Transfer Characteristics 18 18 12 12 TC = 125_C 6 25_C - 55_C 6 1.5 V 1V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.020 6000 Capacitance r DS(on) - On-Resistance ( Ω ) 0.016 C - Capacitance (pF) 5000 0.012 VGS = 2.5 V 4000 Ciss 3000 0.008 VGS = 4.5 V 2000 Crss Coss 0.004 1000 0.000 0 6 12 18 24 30 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 VDS = 6 V ID = 10 A 1.8 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( Ω ) (Normalized) 4 1.6 VGS = 4.5 V ID = 10 A 1.4 3 1.2 2 1.0 1 0.8 0 0 10 20 30 40 50 60 0.6 - 50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70160 S-03950—Rev. E, 26-May-03 www.vishay.com 3 Si9426DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.05 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( Ω ) 0.04 0.03 0.02 ID = 10 A 0.01 TJ = 25_C 1 0 0.2 0.4 0.6 0.8 1.0 0.00 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 100 Single Pulse Power 0.4 ID = 250 µA V GS(th) Variance (V) 0.2 Power (W) 80 60 - 0.0 40 - 0.2 - 0.4 20 - 0.6 - 50 0 0 50 TJ - Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70160 S-03950—Rev. E, 26-May-03