SI9428DY

Si9428DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.03 @ VGS = 4.5 V 0.04 @ VGS = 2.5 V ID (A) 6 5.2 D1 D1 SO-8 S S S G 1 2 3 4 Top View S1 Ordering Information: Si9428DY Si9428DY-T1 (with Tape and Reel) N-Channel MOSFET 8 7 6 5 D D D D G1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 20 "8 6 4.8 20 1.7 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient t v10 sec Steady State RthJA 70 Symbol Typical Maximum 50 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v10 sec. Document Number: 70810 S-03950—Rev. C, 26-May-03 www.vishay.com 1 Si9428DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static-0.6 Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6 A VGS = 2.5 V, ID = 5.2 A VDS = 10 V, ID = 6 A IS = 1.7 A, VGS = 0 V 20 0.023 0.028 24 0.75 1.2 0.03 0.04 0.6 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 1 30 70 70 30 70 VDS = 10 V, VGS = 4.5 V, ID = 6 A 21 2.9 6.5 3.4 60 140 140 60 100 ns W 40 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70810 S-03950—Rev. C, 26-May-03 Si9428DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 4.5, 4, 3.5, 3, 2.5 V 2V 16 15 I D - Drain Current (A) 12 I D - Drain Current (A) 20 Transfer Characteristics 10 8 5 TC = 125_C 25_C 4 1.5 V 1, 0 V - 55_C 1.5 2.0 2.5 0 0 1 2 3 4 5 0 0.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 3000 Capacitance r DS(on)- On-Resistance ( W ) 0.04 C - Capacitance (pF) VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 2500 2000 1500 Ciss 1000 Coss 500 Crss 0.01 0.00 0 5 10 ID - Drain Current (A) 15 20 0 0 2 4 6 8 10 12 VDS - Drain-to-Source Voltage (V) Gate Charge 5 VDS = 10 V ID = 6 A 1.8 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) r DS(on)- On-Resistance ( W ) (Normalized) 4 1.6 VGS = 4.5 V ID = 6 A 1.4 3 1.2 2 1.0 1 0.8 0 0 5 10 15 20 25 0.6 - 50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70810 S-03950—Rev. C, 26-May-03 www.vishay.com 3 Si9428DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 10 I S - Source Current (A) r DS(on)- On-Resistance ( W ) 0.10 On-Resistance vs. Gate-to-Source Voltage 0.08 0.06 0.04 ID = 6 A 0.02 TJ = 25_C 1 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 48 60 Single Pulse Power 0.2 V GS(th) Variance (V) - 0.0 Power (W) 36 - 0.2 24 - 0.4 - 0.6 12 - 0.8 - 50 0 0 50 TJ - Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70810 S-03950—Rev. C, 26-May-03