SI9433DY

Si9433DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.045 @ VGS = –4.5 V 0.070 @ VGS = –2.7 V ID (A) "5.4 "4.2 SSS SO-8 S S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "12 "5.4 "4.4 "20 –2.6 2.5 Unit V A W 1.6 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70125 S-00652—Rev. J, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 1 Si9433DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –16 V, VGS = 0 V VDS = –10 V, VGS = 0 V, TJ = 70_C VDS v–5 V, VGS = –4.5 V VDS v–5 V, VGS = –2.7 V VGS = –4.5 V, ID = –5.1 A VGS = –2.7 V, ID = –2.0 A VDS = –9 V, ID = –5.1 A IS = –2.6 A, VGS = 0 V –20 A –5 0.032 0.052 15 –0.76 –1.2 0.045 0.070 W S V –0.8 "100 –1 –5 V nA mA Symbol Test Condition Min Typa Max Unit On-State Drain Currentb Drain Current ID(on) Drain-Source On-State Resistanceb On Resistance Forward Transconductanceb Diode Forward Voltageb rDS(on) gfs VSD Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –2.6, di/dt = 100 A/ms VDD = –6 V, RL = 6 W V, ID ^ –1 A, VGEN = –4 5 V RG = 6 W A 4.5 V, VDS = –6 V, VGS = –4 5 V ID = –5 1 A V 4.5 V, 5.1 20 4 7 34 70 76 61 60 60 100 180 100 80 ns 60 nC C Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70125 S-00652—Rev. J, 27-Mar-00 Si9433DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5, 4.5, 4, 3.5, 3 V 20 Transfer Characteristics 16 I D – Drain Current (A) 16 I D – Drain Current (A) 12 2.5 V 8 12 8 TC = 125_C 4 25_C –55_C 4 2V 0 0 2 4 6 8 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.16 0.14 r DS(on) – On-Resistance ( Ω ) 0.12 0.10 0.08 0.06 0.04 0.02 0 0 3 6 9 12 15 0 0 2 VGS = 4.5 V VGS = 2.7 V C – Capacitance (pF) 3000 4000 Capacitance 2000 Ciss Coss 1000 Crss 4 6 8 10 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 4.0 V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( Ω ) (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 4 8 12 16 20 0 –50 VDS = 6 V ID = 5.1 A 1.6 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.1 A 1.2 0.8 0.4 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70125 S-00652—Rev. J, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 3 Si9433DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 0.20 On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) 10 TJ = 150_C r DS(on) – On-Resistance ( Ω ) 0.16 0.12 0.08 ID = 5.1 A TJ = 25_C 0.04 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0.8 Threshold Voltage 70 60 Single Pulse Power 0.6 ID = 250 µA V GS(th) Variance (V) 0.4 Power (W) 50 40 30 20 0.2 0.0 –0.2 10 0 0.01 –0.4 –50 –25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 10–2 10–1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70125 S-00652—Rev. J, 27-Mar-00