SI9434DY

Si9434DY Siliconix P-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) 0.040 @ VGS = –4.5 V 0.060 @ VGS = –2.5 V ID (A) "6.4 "5.1 Recommended upgrade: Si9424DY SSS SO-8 S S S G 1 2 3 4 Top View DDDD P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)A Drain Current (T 150 Pulsed Drain Current Continuous Source Current (Diode Conduction)A Maximum Power DissipationA Power Dissi Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C SYMBOL VDS VGS ID IDM IS PD TJ, Tstg LIMIT –20 "8 "6.4 "5.1 "10 –2.5 2.5 W 1.6 –55 to 150 _C A V UNIT THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-AmbientA Notes A. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70147. A SPICE Model data sheet is available for this product (FaxBack document #70528). Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56981—Rev. H, 15-Jun-98 Siliconix was formerly a division of TEMIC Semiconductors SYMBOL RthJA LIMIT 50 UNIT _C/W 1 Si9434DY Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) PARAMETER STATIC SYMBOL TEST CONDITION MIN TYP MAX UNIT Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 70_C VDS v –5 V, VGS = –4.5 V VDS v –5 V, VGS = –2.5 V VGS = –4.5 V, ID = –6.4 A VGS = –2.5 V, ID = –5.1 A VDS = –9 V, ID = –6.4 A IS = –2.5 A, VGS = 0 V –0.6 "100 –1 –5 –10 V nA mA On-State Drain CurrentA Drain Current ID(on) D(on) A –5 0.031 0.045 14 –0.9 –1.2 0.040 0.060 W S V Drain-Source On-State ResistanceA On Resistance Forward TransconductanceA Diode Forward VoltageA DynamicB Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time rDS(on) DS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr IF = –2.5 A, di/dt = 100 A/ms VDD = –10 V, RL = 6 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W VDS = –10 V, VGS = –4.5 V, ID = –6.4 A 30 5 9 25 42 160 75 50 50 nC 50 80 200 120 100 ns Notes A. Pulse test; pulse width v 300 ms, duty cycle v 2%. B. Guaranteed by design, not subject to production testing. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56981—Rev. H, 15-Jun-98 Siliconix was formerly a division of TEMIC Semiconductors 2 Si9434DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 20 2.5 V 20 Transfer Characteristics 15 I D – Drain Current (A) 10 2V 5 I D – Drain Current (A) VGS = 5, 4.5, 4, 3.5, 3 V 15 10 5 TC = 125_C 25_C –55_C 0 1.5 V 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) On Resistance vs. Drain Current 0.20 4000 Capacitance r DS(on) – On-Resistance ( W ) C – Capacitance (pF) 0.15 3000 Ciss 2000 Coss 1000 Crss 0.10 VGS = 2.5 V 0.05 VGS = 4.5 V 0 0 5 10 ID – Drain Current (A) 15 20 0 0 4 8 12 VDS – Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 6.4 A 4 Gate Charge 1.6 On Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.4 A V GS – Gate-to-Source Voltage (V) 1.4 r DS(on) – On-Resistance (W ) (Normalized) 0 5 10 15 20 25 30 3 1.2 2 1.0 1 0.8 0 Qg – Total Gate Charge (nC) 0.6 –50 0 50 100 150 TJ – Junction Temperature (_C) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56981—Rev. H, 15-Jun-98 Siliconix was formerly a division of TEMIC Semiconductors 3 Si9434DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted) Source Drain Diode Forward Voltage 40 0.100 On Resistance vs. Gate to Source Voltage ID = 6.4 A I S – Source Current (A) TJ = 150_C 10 r DS(on) – On-Resistance ( W ) 0.080 0.060 TJ = 25_C 0.040 0.020 1 0 0.4 0.8 1.2 1.6 2.0 VSD – Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) 0.40 Threshold Voltage 50 Single Pulse Power 0.30 40 ID = 250 mA Power (W) 30 V GS(th) Variance (V) 0.20 0.10 20 0.00 10 –0.10 –0.20 –50 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction to Ambient 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-56981—Rev. H, 15-Jun-98 Siliconix was formerly a division of TEMIC Semiconductors 4