SI9435BDY-T1

Si9435BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.042 @ VGS = −10 V −30 0.055 @ VGS = −6 V 0.070 @ VGS = −4.5 V FEATURES ID (A) −5.7 −5.0 −4.4 D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −5.7 −4.6 −30 −2.3 2.5 1.6 −55 to 150 −4.1 −3.2 A −1.1 1.3 0.8 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 24 Maximum 50 95 30 Unit _C/W Document Number: 72245 S-32274—Rev. B, 03-Nov-03 www.vishay.com 1 Si9435BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS ID( ) D(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 70_C VDS v −10 V, VGS = −10 V VDS v −5 V, VGS = −4.5 V VGS = −10 V, ID = −5.7 A Drain-Source On-State Resistanceb rDS(on) VGS = −6 V, ID = −5 A VGS = −4.5 V, ID = −4.4 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = −15 V, ID = −5.7 A IS = −2.3 A, VGS = 0 V −20 −5 0.033 0.043 0.056 13 −0.8 −1.1 0.042 0.055 0.070 S V W −1.0 −3.0 "100 −1 −5 V nA mA Symbol Test Condition Min Typa Max Unit On-State On State Drain Currentb A Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.2 A, di/dt = 100 A/ms VDD = −15 V, RL = 15 W V, ID ^ −1 A, VGEN = −10 V, RG = 6 W VDS = −15 V, VGS = −10 V, ID = −3.5 A 16 2.3 4.5 8.8 14 14 42 30 30 25 25 70 50 60 ns W 24 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 72245 S-32274—Rev. B, 03-Nov-03 Si9435BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 6 V 25 I D − Drain Current (A) I D − Drain Current (A) 20 15 10 5 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 4V 30 5V 25 20 15 10 TC = 125_C 5 3V 0 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) 25_C Vishay Siliconix Transfer Characteristics −55_C On-Resistance vs. Drain Current 0.15 r DS(on) − On-Resistance ( W ) 1100 Capacitance C − Capacitance (pF) 0.12 880 Ciss 660 0.09 VGS = 4.5 V 0.06 VGS = 6 V 440 Coss Crss 0 0.03 VGS = 10 V 220 0.00 0 4 8 12 16 20 0 5 10 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 3.5 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.7 A 1.4 8 6 r DS(on) − On-Resistance (W ) (Normalized) 6.4 9.6 12.8 16.0 1.2 4 1.0 2 0.8 0 0.0 3.2 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) Document Number: 72245 S-32274—Rev. B, 03-Nov-03 TJ − Junction Temperature (_C) www.vishay.com 3 Si9435BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.20 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 TJ = 25_C r DS(on) − On-Resistance ( W ) 0.16 I S − Source Current (A) 0.12 ID = 5.7 A 0.08 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.6 150 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) 120 ID = 250 mA Power (W) 90 0.2 0.0 60 −0.2 30 −0.4 −50 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 Time (sec) 1 10 TJ − Temperature (_C) 100 Safe Operating Area, Junction-to-Foot Limited by rDS(on) 10 I D − Drain Current (A) 1 ms 1 10 ms 100 ms 1s 10 s dc 0.1 TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com Document Number: 72245 S-32274—Rev. B, 03-Nov-03 4 Si9435BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72245 S-32274—Rev. B, 03-Nov-03 www.vishay.com 5