Si9435BDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.042 @ VGS = −10 V −30 0.055 @ VGS = −6 V 0.070 @ VGS = −4.5 V
FEATURES
ID (A)
−5.7 −5.0 −4.4
D TrenchFETr Power MOSFET
S
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
−30 "20
Unit
V
−5.7 −4.6 −30 −2.3 2.5 1.6 −55 to 150
−4.1 −3.2 A
−1.1 1.3 0.8 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
40 70 24
Maximum
50 95 30
Unit
_C/W
Document Number: 72245 S-32274—Rev. B, 03-Nov-03
www.vishay.com
1
Si9435BDY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS ID( ) D(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 70_C VDS v −10 V, VGS = −10 V VDS v −5 V, VGS = −4.5 V VGS = −10 V, ID = −5.7 A Drain-Source On-State Resistanceb rDS(on) VGS = −6 V, ID = −5 A VGS = −4.5 V, ID = −4.4 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = −15 V, ID = −5.7 A IS = −2.3 A, VGS = 0 V −20 −5 0.033 0.043 0.056 13 −0.8 −1.1 0.042 0.055 0.070 S V W −1.0 −3.0 "100 −1 −5 V nA mA
Symbol
Test Condition
Min
Typa
Max
Unit
On-State On State Drain Currentb
A
Dynamica
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.2 A, di/dt = 100 A/ms VDD = −15 V, RL = 15 W V, ID ^ −1 A, VGEN = −10 V, RG = 6 W VDS = −15 V, VGS = −10 V, ID = −3.5 A 16 2.3 4.5 8.8 14 14 42 30 30 25 25 70 50 60 ns W 24 nC
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
www.vishay.com
2
Document Number: 72245 S-32274—Rev. B, 03-Nov-03
Si9435BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 10 thru 6 V 25 I D − Drain Current (A) I D − Drain Current (A) 20 15 10 5 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 4V 30 5V 25 20 15 10 TC = 125_C 5 3V 0 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) 25_C
Vishay Siliconix
Transfer Characteristics
−55_C
On-Resistance vs. Drain Current
0.15 r DS(on) − On-Resistance ( W ) 1100
Capacitance
C − Capacitance (pF)
0.12
880 Ciss 660
0.09 VGS = 4.5 V 0.06 VGS = 6 V
440 Coss Crss 0
0.03
VGS = 10 V
220
0.00 0 4 8 12 16 20
0
5
10
15
20
25
30
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 3.5 A 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 5.7 A 1.4
8
6
r DS(on) − On-Resistance (W ) (Normalized) 6.4 9.6 12.8 16.0
1.2
4
1.0
2
0.8
0 0.0
3.2
0.6 −50
−25
0
25
50
75
100
125
150
Qg − Total Gate Charge (nC) Document Number: 72245 S-32274—Rev. B, 03-Nov-03
TJ − Junction Temperature (_C) www.vishay.com
3
Si9435BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50 0.20
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10 TJ = 25_C
r DS(on) − On-Resistance ( W )
0.16
I S − Source Current (A)
0.12
ID = 5.7 A
0.08
0.04
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Threshold Voltage
0.6 150
Single Pulse Power, Junction-to-Ambient
0.4 V GS(th) Variance (V)
120 ID = 250 mA Power (W) 90
0.2
0.0
60
−0.2
30
−0.4 −50
−25
0
25
50
75
100
125
150
0 10−3
10−2
10−1 Time (sec)
1
10
TJ − Temperature (_C)
100
Safe Operating Area, Junction-to-Foot
Limited by rDS(on)
10 I D − Drain Current (A) 1 ms 1
10 ms 100 ms 1s 10 s dc
0.1
TC = 25_C Single Pulse
0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com Document Number: 72245 S-32274—Rev. B, 03-Nov-03
4
Si9435BDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Vishay Siliconix
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
2 1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
Document Number: 72245 S-32274—Rev. B, 03-Nov-03
www.vishay.com
5
很抱歉,暂时无法提供与“SI9435BDY”相匹配的价格&库存,您可以联系我们找货
免费人工找货