SI9801DY

Si9801DY Vishay Siliconix N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.055 @ VGS = 4.5 V 0.075 @ VGS = 3.0 V ID (A) "4.5 "3.8 "4.0 "3.0 P-Channel –20 0.080 @ VGS = –4.5 V 0.120 @ VGS = –3.0 V S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 8 7 6 5 D D D D G1 D G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a (T 150 Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg 1.7 2.0 W 1.3 –55 to 150 _C Symbol VDS VGS N-Channel 20 "14 "4.5 "3.6 "20 P-Channel –20 Unit V "4.0 "3.0 A –1.7 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70712 S-61825—Rev. C, 16-Aug-99 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 62.5 Unit _C/W 5-1 Si9801DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current Z Gate Voltage Drain Current l i IDSS VDS = –20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = –20 V, VGS = 0 V, TJ = 70_C On-State Drain Currenta Drain Current ID(on) VDS = 5 V, VGS = 4.5 V VDS = –5 V, VGS = –4.5 V VGS = 4.5 V, ID = 4.5 A DiS i Drain-Source On-State Resistancea On S Resistance rDS(on) VGS = –4.5 V, ID = –4.0 A VGS = 3.0 V, ID = 3.8 A VGS = –3.0 V, ID = –3.0 A Forward Transconductancea Transconductance gfs VDS = 15 V, ID = 4.5 A VDS = –15 V, ID = –4.0 A IS = 1.7 A, VGS = 0 V IS = –1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 A –20 0.044 0.064 0.055 0.086 11.5 S 9.8 0.73 –0.75 1.2 V –1.2 0.055 0.080 0.075 0.120 W 0.6 V –0.6 "100 "100 1 –1 25 –25 mA nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage Leakage IGSS Diode Forward Voltagea Forward Voltage VSD Dynamicb N-Ch Total Gate Charge Total Gate Charge Qg N-Channel N Ch l VDS = 3.5 V VGS = 4.5 V ID = 0.8 A 5 V, 5 V, 8 P-Channel P Ch l VDS = –3.5 V, VGS = –4.5 V 3.5 V, 4.5 ID = –0.8 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time Delay Time td(on) N-Channel N Ch l VDD = 3.5 V, RL = 4.3 W .5 V, .3 ID ^ 0.8 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = –3 5 V RL = 4.3 W 3 3.5 V, ID ^ –0.8 A, VGEN = –4.5 V, RG = 6 W 0.8 4.5 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Time Source-Drain Reverse R R Recovery Time Ti tf N-Channel—IF = 1.7 A, di/dt = 100 A/ms P-Channel—IF = –1.7 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 5.2 7.9 0.95 nC C 1.60 1.15 1.90 12 20 22 52 27 37 8 11 60 60 20 40 50 90 50 ns 60 20 20 100 100 10 15 Gate-Source Charge Charge Qgs Gate-Drain Charge Charge Qgd Rise Time Time tr Turn-Off Delay Time Delay Time td(off) trr Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 5-2 Document Number: 70712 S-61825—Rev. C, 16-Aug-99 Si9801DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5, 4.5 thru 3 V 16 I D – Drain Current (A) I D – Drain Current (A) 16 20 TC = –55_C 25_C N CHANNEL Transfer Characteristics 12 2.5 V 12 125_C 8 2V 4 1.5 V 0 0 2 4 6 8 10 8 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1200 Capacitance r DS(on)– On-Resistance ( W ) 0.16 900 0.12 C – Capacitance (pF) 600 Coss 300 Crss Ciss 0.08 VGS = 3 V 0.04 VGS = 4.5 V 0 0 4 8 12 16 20 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 4.0 V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 0 –50 VDS = 3.5 V ID = 0.8 A 1.6 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.5 A 1.2 0.8 0.4 0 50 100 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70712 S-61825—Rev. C, 16-Aug-99 www.vishay.com S FaxBack 408-970-5600 5-3 Si9801DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.15 N CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on)– On-Resistance ( W ) 10 I S – Source Current (A) 0.12 ID = 4.5 A 0.09 TJ = 150_C TJ = 25_C 0.06 0.03 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA 40 –0.2 Power (W) –0.0 30 20 –0.4 10 –0.6 –50 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 5-4 Document Number: 70712 S-61825—Rev. C, 16-Aug-99 Si9801DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3.5 V 16 3V I D – Drain Current (A) I D – Drain Current (A) 12 12 16 20 TC = –55_C 25_C 125_C P CHANNEL Transfer Characteristics 8 2.5 V 8 4 2V 1.5 V 4 0 0 2 4 6 8 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.25 1800 Capacitance r DS(on)– On-Resistance ( W ) 0.20 C – Capacitance (pF) 1500 1200 0.15 VGS = 3 V 0.10 VGS = 4.5 V 900 Ciss 600 Coss Crss 0.05 300 0 0 4 8 12 16 20 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 4.0 V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 0 –50 VDS = 3.5 V ID = 0.8 A 1.6 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.0 A 1.2 0.8 0.4 0 50 100 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70712 S-61825—Rev. C, 16-Aug-99 www.vishay.com S FaxBack 408-970-5600 5-5 Si9801DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.20 P CHANNEL On-Resistance vs. Gate-to-Source Voltage 10 I S – Source Current (A) r DS(on)– On-Resistance ( W ) 0.16 ID = 4.0 A 0.12 TJ = 150_C TJ = 25_C 0.08 0.04 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA 40 0.0 Power (W) 0.2 30 20 –0.2 10 –0.4 –50 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 5-6 Document Number: 70712 S-61825—Rev. C, 16-Aug-99