SI9802DY

Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.055 @ VGS = 4.5 V 0.075 @ VGS = 3.0 V ID (A) "4.5 "3.8 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "12 "4.5 "3.6 "25 "1.7 2 Unit V A W 1.3 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70625 S-51303—Rev. A, 19-Dec-96 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 1 Si9802DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 5 V VGS = 4.5 V, ID = 4.5 A VGS = 3.0 V, ID = 3.8 A VDS = 10 V, ID = 4.5 A IS =1.7 A, VGS = 0 V 25 0.044 0.055 11.5 0.73 1.2 0.055 0.075 W S V 0.6 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W 10 V, 10 ID ^ 1 A, VGEN = 4.5 V RG = 6 W 5 V, VDS = 10 V, VGS = 4.5 V ID = 4.5 A 10 V 5 V, 5 5.5 1.2 1.5 12 30 23 9 60 25 60 50 20 100 ns 10 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70625 S-51303—Rev. A, 19-Dec-96 Si9802DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 5 thru 3.5 V 20 I D – Drain Current (A) 3V I D – Drain Current (A) 20 25_C 15 125_C 25 TC = –55_C Transfer Characteristics 15 2.5 V 10 10 5 2V 1.5 V 5 0 0 2 4 6 8 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1200 Capacitance 0.25 r DS(on) – On-Resistance ( W ) 900 0.20 C – Capacitance (pF) 0.15 VGS = 3 V 600 Coss 300 Crss Ciss 0.10 0.05 VGS = 4.5 V 0 0 5 10 15 20 25 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 4.0 V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( W ) (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 0 –50 VDS = 10 V ID = 4.5 A 1.6 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.5 A 1.2 0.8 0.4 0 50 100 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70625 S-51303—Rev. A, 19-Dec-96 www.vishay.com S FaxBack 408-970-5600 3 Si9802DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.15 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 0.12 ID = 4.5 A 0.09 I S – Source Current (A) 10 TJ = 150_C TJ = 25_C 0.06 0.03 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 50 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA 40 –0.0 Power (W) 30 –0.2 20 –0.4 –0.6 10 –0.8 –50 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70625 S-51303—Rev. A, 19-Dec-96