SI9804DY

Si9804DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) 0.023 @ VGS = 4.5 V 0.030 @ VGS = 3.0 V ID (A) "7.8 "6.8 D SO-8 S S S G 1 2 3 4 Top View S N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 25 "12 "7.8 "6.2 "40 "2.1 2.5 Unit V A W 1.6 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70626 S-54699—Rev. B, 01-Sep-97 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 1 Si9804DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea On Resistance Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 25 V, VGS = 0 V VDS = 25 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 7.8 A VGS = 3.0 V, ID = 6.8 A VDS = 10 V, ID = 7.8 A IS = 2.1 A, VGS = 0 V 40 0.018 0.022 25 0.71 1.2 0.023 0.030 0.6 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W 10 V, 10 ID ^ 1 A, VGEN = 4.5 V RG = 6 W 5 V, VDS = 10 V, VGS = 4.5 V ID = 7.8 A 10 V 5 V, 8 13.5 2.4 4.2 16 30 46 18 80 30 60 90 35 120 ns 20 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70626 S-54699—Rev. B, 01-Sep-97 Si9804DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 3 V 32 2.5 V I D – Drain Current (A) 24 I D – Drain Current (A) 24 32 40 Transfer Characteristics 16 2V 8 1.5 V 0 0 2 4 6 8 10 16 TC = 125_C 8 25_C –55_C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.040 3000 Capacitance r DS(on) – On-Resistance ( W ) 0.032 VGS = 3 V 0.024 VGS = 4.5 V 0.016 C – Capacitance (pF) 2500 2000 Ciss 1500 Coss 1000 Crss 0.008 500 0 0 8 16 24 32 40 0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 4.0 V GS – Gate-to-Source Voltage (V) r DS(on) – On-Resistance ( W ) (Normalized) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 3 6 9 12 15 0 –50 VDS = 10 V ID = 7.8 A 1.6 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.8 A 1.2 0.8 0.4 0 50 100 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70626 S-54699—Rev. B, 01-Sep-97 www.vishay.com S FaxBack 408-970-5600 3 Si9804DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.08 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) I S – Source Current (A) 0.06 TJ = 150_C 10 TJ = 25_C ID = 7.8 A 0.04 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 100 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA 80 –0.0 Power (W) 60 –0.2 40 –0.4 20 –0.6 –0.8 –50 0 0 50 TJ – Temperature (_C) 100 150 0.01 0.1 1 Time (sec) 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 70626 S-54699—Rev. B, 01-Sep-97