Si9934BDY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
−12
FEATURES
ID (A)
−6.4 −5.1
rDS(on) (W)
0.035 @ VGS = −4.5 V 0.056 @ VGS = −2.5 V
D TrenchFETr Power MOSFET
S1
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si9934BDY—E3 Si9934BDY-T1—E3 (with Tape and Reel) 8 7 6 5 D1 D1 D2 D2 G1 G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
−12 "8
Unit
V
−6.4 −5.1 −20 −1.7 2.0 1.3 −55 to 150
−4.8 −3.9 A
−0.9 1.1 0.7 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 72525 S-41578—Rev. C, 23-Aug-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
55 90 33
Maximum
62.5 110 40
Unit
_C/W
1
Si9934BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −12 V, VGS = 0 V VDS = −12 V, VGS = 0 V, TJ = 55_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −6.4 A VGS = −2.5 V, ID = −1.8 A VDS = −10 V, ID = −6.4 A IS = −1.7 A, VGS = 0 V −20 0.028 0.044 17 −0.8 −1.2 0.035 0.056 −0.6 −1.4 "100 −1 −5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W VDS = 6 V, VGS = −4.5 V, ID = −6.4 A 13 2.6 4.0 9 19 35 80 50 40 30 55 120 75 80 ns W 20 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 5 thru 3 V 16 I D − Drain Current (A) I D − Drain Current (A) 2.5 V 16 20
Transfer Characteristics
12
12
8 2V 4 1.5 V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V)
8 TC = 125_C 4 25_C 0 0.0 0.5 1.0 1.5 −55_C 2.0 2.5 3.0
VGS − Gate-to-Source Voltage (V) Document Number: 72525 S-41578—Rev. C, 23-Aug-04
www.vishay.com
2
Si9934BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10 r DS(on) − On-Resistance ( W ) 2000
Capacitance
C − Capacitance (pF)
0.08
1600 Ciss 1200
0.06 VGS = 2.5 V 0.04
VGS = 4.5 V
800 Coss
0.02
400
Crss
0.00 0 4 8 12 16 20
0 0 2 4 6 8 10 12
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
5 V GS − Gate-to-Source Voltage (V) VDS = 6 V ID = 6.4 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 3 6 9 12 15 Qg − Total Gate Charge (nC) 0.6 −50
On-Resistance vs. Junction Temperature
VGS = 4.5 V ID = 6.4 A
3
2
1
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 TJ = 150_C 0.10
On-Resistance vs. Gate-to-Source Voltage
I S − Source Current (A)
10
r DS(on) − On-Resistance ( W )
0.08 ID = 1.8 A 0.06 ID = 6.4 A 0.04
TJ = 25_C
0.02
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Document Number: 72525 S-41578—Rev. C, 23-Aug-04
www.vishay.com
3
Si9934BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.3 V GS(th) Variance (V) ID = 150 mA 0.2 0.1 0.0 −0.1 −0.2 −50 Power (W) 20 30
Single Pulse Power
25
15 10 5 0 10−3
−25
0
25
50
75
100
125
150
10−2
10−1
1
10
100
600
TJ − Temperature (_C)
Time (sec)
100
Safe Operating Area, Junction-to-Ambient
rDS(on) Limited IDM Limited
10 I D − Drain Current (A) P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 dc
0.1
TA = 25_C Single Pulse BVDSS Limited 1 10
0.01 0.1
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
www.vishay.com
4
Document Number: 72525 S-41578—Rev. C, 23-Aug-04
Si9934BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2 1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
Document Number: 72525 S-41578—Rev. C, 23-Aug-04
www.vishay.com
5
很抱歉,暂时无法提供与“SI9934BDY-E3”相匹配的价格&库存,您可以联系我们找货
免费人工找货