SI9936BDY_07

Si9936BDY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.035 @ VGS = 10 V 0.052 @ VGS = 4.5 V ID (A) 6.0 4.9 D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si9936BDY—E3 Si9936BDY-T1—E3 (with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 6.0 4.8 40 1.7 2.0 1.3 Steady State Unit V 4.5 3.6 A 0.9 1.1 0.7 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72521 S-32411—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 53 92 30 Maximum 62.5 110 40 Unit _C/W 1 Si9936BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 6 A VGS = 4.5 V, ID = 4.9 A VDS = 15 V, ID = 6 A IS = 1.7 A, VGS = 0 V 40 0.028 0.041 12 0.8 1.2 0.035 0.052 1.0 3.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 6 A 8.6 1.8 1.5 2.8 10 15 25 10 20 15 25 40 15 40 ns W 13 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 35 30 I D − Drain Current (A) 25 20 15 10 5 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 3V 4V I D − Drain Current (A) VGS = 10 thru 6 V 5V 40 35 30 25 20 15 10 5 0 0 1 Transfer Characteristics TC = −55_C 25_C 125_C 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72521 S-32411—Rev. B, 24-Nov-03 2 Si9936BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) − On-Resistance ( W ) 800 700 C − Capacitance (pF) 0.08 600 500 400 300 200 100 0.00 0 5 10 15 20 25 30 35 40 0 0 5 10 15 20 25 30 Crss Coss Ciss Vishay Siliconix Capacitance 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 6 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6 A 1.4 6 r DS(on) − On-Resistance (W ) (Normalized) 4 6 8 10 1.2 4 1.0 2 0.8 0 0 2 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.10 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.08 0.06 ID = 6 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72521 S-32411—Rev. B, 24-Nov-03 www.vishay.com 3 Si9936BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA −0.0 −0.2 −0.4 −0.6 −0.8 −50 10 Power (W) 30 50 Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 dc Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 92_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72521 S-32411—Rev. B, 24-Nov-03 Si9936BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72521 S-32411—Rev. B, 24-Nov-03 www.vishay.com 5 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.