SI9948AEY

Si9948AEY Vishay Siliconix Dual P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) 0.17 @ VGS = –10 V 0.26 @ VGS = –4.5 V ID (A) "2.6 "2.1 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –60 "20 "2.6 "2.2 "15 –2 2.4 Unit V A W 1.7 –55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Ambienta t v 10 sec RthJA Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70759 S-57253—Rev. B, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 93 Symbol Typ Max 62.5 Unit _C/W 2-1 Si9948AEY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea On Resistance Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –60 V, VGS = 0 V VDS = –60 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = –2.6 A VGS = –4.5 V, ID = –2.1 A VDS = –15 V, ID = –2.6 A IS = –2.0 A, VGS = 0 V –15 0.14 0.20 5.0 –1.2 0.17 0.26 –1 "100 –1 –10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –2.0 A, di/dt = 100 A/ms VDD = –30 V, RL = 30 W V, 30 ID ^ –1 A, VGEN = –10 V RG = 6 W A V, VDS = –30 V, VGS = –10 V ID = –2.6 A V V, 26 10 2.5 1.8 8 10 23 12 50 20 20 40 20 90 ns 20 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70759 S-57253—Rev. B, 24-Feb-98 Si9948AEY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10 through 6 V 12 I D – Drain Current (A) I D – Drain Current (A) 5V 12 25_C 9 150_C 15 TC = –55_C Transfer Characteristics 9 4V 6 6 3 3V 0 0 1 2 3 4 5 3 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.4 800 Capacitance r DS(on) – On-Resistance ( Ω ) Ciss 0.3 VGS = 4.5 V VGS = 10 V C – Capacitance (pF) 600 0.2 400 0.1 200 Coss Crss 0 0 3 6 9 12 15 0 0 10 20 30 40 50 60 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) 10 Gate Charge 2.1 On-Resistance vs. Junction Temperature V GS – Gate-to-Source Voltage (V) 6 r DS(on) – On-Resistance ( Ω ) (Normalized) 8 VDS = 30 V ID = 2.6 A 1.8 VGS = 10 V ID = 2.6 A 1.5 4 1.2 2 0.9 0 0 2 4 6 8 10 0.6 –50 –25 0 25 50 75 100 125 150 175 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70759 S-57253—Rev. B, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si9948AEY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 20 Source-Drain Diode Forward Voltage 0.4 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( Ω ) I S – Source Current (A) 0.3 10 TJ = 175_C 0.2 TJ = 25_C 0.1 ID = 2.6 A 1 0 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.8 120 Single Pulse Power 0.6 ID = 250 µA 0.4 Power (W) 60 90 V GS(th) Variance (V) 0.2 0.0 30 –0.2 –0.4 –50 –25 0 25 50 75 100 125 150 175 0 0.001 0.01 0.1 1 Time (sec) 10 100 1000 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 2. Per Unit Base = RthJA = 93_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10+2 10+3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70759 S-57253—Rev. B, 24-Feb-98