SI9987CYT1

Si9987 Vishay Siliconix Buffered H-Bridge FEATURES D D D D D D 1.0-A H-Bridge 500-kHz Switching Rate Shoot-Through Limited TTL Compatible Inputs 3.8- to 13.2-V Operating Range Surface Mount Packaging APPLICATIONS D D D D D D D VCM Driver Brushed Motor Driver Stepper Motor Driver Power Converter Optical Disk Drives Power Supplies High Performance Servo DESCRIPTION The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1.0 A @ VDD = 5.0 V (room temperature) at switching rates up to 500 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on simultaneously. Unique input codes allow both outputs to be forced low (for braking) or forced to a high impedance level. The Si9987 is available in an 8-Pin SOIC package, specified to operate over a voltage range of 3.8 V to 13.2 V, and the commercial temperature range of 0 to 70_C (C suffix) and −40 to 85_C (D suffix). The Si9987 is available in lead free. FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE SO-8 SA GND VDD SB 1 2 3 4 Top View 8 OUTA INA INB OUTB INA (7) (3) VDD Si9987 7 6 5 TRUTH TABLE INA 1 0 0 1 Shoot-Through Protection Logic INB 0 1 0 1 OUTA 1 0 0 HiZ OUTB 0 1 0 HiZ (6) INB (2) GND (1) SA (8) (5) OUTPUT A B (4) SB ORDERING INFORMATION Part Number Si9987CY-T1 Si9987DY-T1 Si9987CY-T1—E3 Si9987DY-T1—E3 Si9987CY Si9987DY Document Number: 70864 S-40132—Rev. D, 16-Feb-04 Temperature Range 0 to 70_C −40 to 85_C 0 to 70_C −40 to 85_C 0 to 70_C −40 to 85_C Package Tape and Reel Lead Free Tape and Reel Bulk (tubes) www.vishay.com 1 Si9987 Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Voltage on any pin with respect to ground . . . . . . . . . . . −0.3 V to VDD +0.3 V Voltage on pins 5, 8 with respect to GND . . . . . . . . . . . . . . −1 V to VDD +1 V Voltage on pins 1, 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to GND +1 V Maximum VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 150_C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C Power Dissipationb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W qJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100_C/W Continuous IOUT Current (TJ = 135_C)c TA = 25_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "1.02 A TA = 70_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "0.75 A TA = 85_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "0.65 A Operating Temperature Range Si9987CY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 70_C Si9987DY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 to 85_C Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 10 mW/_C above 25_C. c. TJ = TA + (PD x qJA), PD = Power Dissipation . RECOMMENDED OPERATING RANGE VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8 V to 13.2 V Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 135_C SPECIFICATIONS Test Conditions Unless Specified Parameter Input Input Voltage High Input Voltage Low Input Current with Input Voltage High Input Current with Input Voltage Low VINH VINL IINH IINL VIN = 2 V VIN = 0 V −1 2 1 1 V mA Limits Mina Typb Maxa Unit Symbol VDD = 3.8 to 13.2 V SA @ GND, SB @ GND Output IOUT = −1 A Output Voltage Highc p g g VOUTH IOUT = −500 mA 500 VDD = 10.8 V VDD = 4.5 V VDD = 10.8 V VDD = 4.5 V VDD = 10.8 V VDD = 4.5 V VDD = 10.8 V VDD = 4.5 V 10.40 4.00 10.60 4.25 3.63 10.56 4.20 10.68 4.35 3.70 0.24 0.30 0.12 0.15 0.10 0 −10 −0.9 0 VDD +0.7 −0.7 VDD +0.9 0.40 0.50 0.20 0.25 0.17 10 mA V V IOUT = −300 mA, VDD = 3.8 V IOUT = 1 A Output Voltage Lowc p g VOUTL IOUT = 500 mA IOUT = 300 mA, VDD = 3.8 V Output Leakage Current Low Output Leakage Current High Output V Clamp High Output V Clamp Low IOLL IOLH VCLH VCLL INA = INB w 2 V, VOUT = VDD = 13.2 V VOUT = 0, VDD = 13.2 V INA = INB w 2 V IOUT = 100 mA IOUT = −100 mA Supply VDD Supply Current IDD IN = 100 kHz, VDD = 5.5 V INA = INB = 4.5 V, VDD = 5.5 V 1.8 75 2.5 125 mA mA Dynamic Propogation Delay Time Propogation Delay Time TPLH TPHL VDD = 5 V 300 100 nS nS Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Maximum value measured at TJ = 135_C. Typical value measured at TJ = TA = 25_C (pulse width v 300 msec, duty cycle v 2%). www.vishay.com Document Number: 70864 S-40132—Rev. D, 16-Feb-04 2 Si9987 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 12 Output High Voltage vs. Output Current VDD = 10.8 V 500 Output Low Voltage vs. Output Current 9 VOUTL (mV) VOUTH (V) 400 4.5 V VDD = 3.8 V 10.8 V 300 6 4.5 V 3 3.8 V 200 100 0 0.50 0.75 1.00 Output Current (A) 1.25 1.50 0 0.50 0.75 1.00 Output Current (A) 1.25 1.50 200 Supply Current vs. Supply Voltage 6 5 Supply Current vs. Supply Voltage f = 100 kHz 160 I DD − Standby ( m A) 4 120 I DD (mA) 3 2 80 1 40 4 6 8 10 12 14 0 4 6 8 10 12 14 VDD − Supply Voltage (V) VDD − Supply Voltage (V) 200 180 160 Supply Current vs. Temperature VDD = 13.2 V 8 Supply Current vs. Temperature f = 100 kHz 6 VDD = 13.2 V I DD − Standby ( m A) I DD (mA) 140 120 100 5.5 V 80 60 −35 4 2 5.5 V −20 −5 10 25 40 55 70 85 0 −35 −20 −5 10 25 40 55 70 85 Temperature (_C) Temperature (_C) Document Number: 70864 S-40132—Rev. D, 16-Feb-04 www.vishay.com 3 Si9987 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 600 500 400 300 200 100 0 3 6 9 VDD − Supply Voltage (V) 12 15 TPHL TPLH I DD (mA) 9 Propagation Time vs. Supply Voltage 15 Supply Current vs. Frequency 12 VDD = 13.2 V Delay Time (ns) 6 5.5 V 3.8 V 0 0 50 100 f − Frequency (kHz) 150 200 3 35 Supply Current vs. Supply Voltage f = 500 kHz 0.50 0.46 0.42 0.38 R OUT ( W ) ROUT vs. VDD 28 TA = 135_C 85_C 25_C −40_C I DD (mA) 21 0.34 0.30 0.26 0.22 14 7 0.18 0.14 0 4 6 8 10 12 14 VDD − Supply Voltage (v) 0.10 2 4 6 8 VDD 10 12 14 0.5 ROUT vs. Junction Temperature (TJ) 1.5 1.4 R OUT Normalized ( W ) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 ROUT Normalized vs. Junction Temperature (TJ) VDD = 3.8 V 0.4 R OUT ( W ) 4.5 V 10.8 V 0.3 5.5 V 13.2 V VDD = 10.8 V VDD = 4.5 V 0.2 0.1 −50 0 50 Temperature (_C) 100 150 0.6 −50 −25 0 25 50 75 100 125 150 Temperature (_C) www.vishay.com 4 Document Number: 70864 S-40132—Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1