SIA433EDJ-T1-GE3

New Product SiA433EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.018 at VGS = - 4.5 V 0.026 at VGS = - 2.5 V 0.065 at VGS = - 1.8 V ID (A) - 12a - 12a -4 20 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G S APPLICATIONS • Portable Devices - Load Switch - Battery Switch - Charger Switch Marking Code BLX Part # code XXX G R 2.05 mm Lot Traceability and Date code Ordering Information: SiA433EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C d, e Symbol VDS VGS ID IDM IS Limit - 20 ± 12 - 12a - 12a - 11.3b, c - 9.1b, c - 50 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 28 5.3 Maximum 36 6.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 °C/W. Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 www.vishay.com 1 New Product SiA433EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = 0 V, VGS = ± 4.5 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 7.6 A Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C IS = - 9 A, VGS = 0 V - 0.85 30 20 13 17 TC = 25 °C - 12 - 50 - 1.2 60 40 A V ns nC ns Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = 1 Ω ID ≅ - 9 A, VGEN = - 10 V, Rg = 1 Ω VDD = - 10 V, RL = 1 Ω ID ≅ - 9 A, VGEN = - 4.5 V, Rg = 1 Ω f = 1 MHz 0.2 VDS = - 10 V, VGS = - 8 V, ID = - 11 A VDS = - 10 V, VGS = - 4.5 V, ID = - 11 A 50 20 3.3 8.4 1 0.71 1.7 6 3.2 0.3 0.6 10 3.5 2 1.1 2.6 9 5 0.45 0.9 15 5.5 us kΩ 75 30 nC VGS = - 2.5 V, ID = - 6.3 A VGS = - 1.8 V, ID = - 2.5 A VDS = - 10 V, ID = - 7.6 A - 20 0.015 0.021 0.040 35 0.018 0.026 0.065 S Ω - 0.5 - 20 - 12 3 - 1.2 ± 20 ± 0.5 -1 - 10 A µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 New Product SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 1.0 25 °C, unless otherwise noted 10-2 10-3 0.8 I GSS - Gate Current (mA) I GSS - Gate Current (A) 10-4 10-5 TJ = 150 °C 10-6 10-7 10-8 TJ = 25 °C 0.6 0.4 TJ = 25 °C 0.2 0.0 0 3 6 9 12 15 10-9 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 50 VGS = 5 V thru 3 V 40 I D - Drain Current (A) VGS = 2.5 V I D - Drain Current (A) 8 10 Gate Current vs. Gate-Source Voltage 30 6 20 VGS = 2 V 4 TC = 25 °C 2 10 VGS = 1.5 V 0 0.0 TC = 125 °C 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.08 0.07 R DS(on) - On-Resistance (Ω) VGS = 1.8 V 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 10 20 30 40 50 VGS = 4.5 V 0 0 10 VGS = 2.5 V 10 Transfer Characteristics VGS - Gate-to-Source Voltage (V) ID = 11 A 8 VDS = 10 V 6 VDS = 5 V 4 VDS = 16 V 2 20 30 40 50 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 www.vishay.com 3 New Product SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 ID = 7.6 A 1.4 R DS(on) - On-Resistance VGS = 4.5 V I S - Source Current (A) 100 10 (Normalized) 1.2 VGS = 2.5 V 1.0 TJ = 150 °C TJ = 25 °C 1 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.06 1.1 1.0 ID = 7.6 A; TJ = 125 °C 0.9 0.04 ID = 2.5 A; TJ = 125 °C VGS(th) (V) 0.8 Soure-Drain Diode Forward Voltage 0.05 R DS(on) - On-Resistance (Ω) 0.03 ID = 2.5 A; TJ = 25 °C 0.02 ID = 7.6 A; TJ = 25 °C ID = 250 µA 0.7 0.6 0.01 0.5 0.4 - 50 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage 30 Threshold Voltage 100 Limited by RDS(on)* 25 20 Power (W) I D - Drain Current (A) 10 100 µs 1 ms 15 1 10 ms 100 ms 1 s, 10 s 10 0.1 5 TA = 25 °C Single Pulse BVDSS Limited DC 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 0.01 0.1 Single Pulse Power, Junction-to-Ambient 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 New Product SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 20 25 Power Dissipation (W) 15 I D - Drain Current (A) 20 15 Package Limited 10 10 5 5 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 www.vishay.com 5 New Product SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 10-3 Square Wave Pulse Duration (s) 10-2 10-1 0.1 10-4 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65472. www.vishay.com 6 Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 Package Information Vishay Siliconix PowerPAK® SC70-6L PIN1 e PIN2 b PIN3 L PIN1 e PIN2 b PIN3 L K E1 D1 D1 K PIN6 K2 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL E2 K4 E1 D1 PIN6 K3 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF SINGLE K E3 D2 D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E z Z DETAIL Z SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 0.175 0.675 0 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.95 0.235 2.05 1.50 0.395 0.475 0.65 BSC 0.275 TYP 0.400 TYP 0.240 TYP 0.225 TYP 0.355 TYP 0.275 0.375 0.007 Max 0.80 0.05 0.38 0.25 2.15 1.05 0.335 2.15 1.60 0.445 0.525 Min 0.027 0 0.009 0.006 0.078 0.033 0.005 0.078 0.055 0.014 0.017 INCHES Nom 0.030 0.012 0.008 0.081 0.037 0.009 0.081 0.059 0.016 0.019 0.026 BSC 0.011 TYP 0.016 TYP 0.009 TYP 0.009 TYP 0.014 TYP 0.011 0.015 0.175 0.05 0.275 0.10 Max 0.032 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 0.65 BSC 0.275 TYP 0.320 TYP 0.252 TYP 1.98 0.85 2.05 0.95 Min 0.675 0 0.23 0.15 1.98 0.513 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.613 A1 C DUAL PAD INCHES Max 0.80 0.05 0.38 0.25 2.15 0.713 2.15 1.05 Min 0.027 0 0.009 0.006 0.078 0.020 0.078 0.033 Nom 0.030 0.012 0.008 0.081 0.024 0.081 0.037 Max 0.032 0.002 0.015 0.010 0.085 0.028 0.085 0.041 E1 0.026 BSC 0.011 TYP 0.013 TYP 0.010 TYP 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.950 (0.037) 0.300 (0.012) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1