SIA519EDJ-T1-GE3

New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 RDS(on) (Ω) 0.040 at VGS = 4.5 V 0.065 at VGS = 2.5 V 0.090 at VGS = - 4.5 V 0.137 at VGS = - 2.5 V ID (A) 4.5 a FEATURES Qg (Typ.) 3.7 nC 4.5a - 4.5a - 4.5a P-Channel - 20 5.3 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1900 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SC-70-6 Dual APPLICATIONS • Load Switch for Portable Devices • DC/DC Converters D1 S2 S1 D1 D1 6 5 2.05 mm G2 4 1 2 G1 3 D2 D2 EGX Marking Code Part # code G1 G2 S2 2.05 mm XXX Lot Traceability and Date code S1 D2 P-Channel MOSFET Ordering Information: SiA519EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS N-Channel 20 ± 12 4.5a 4.5a 4.5a, b, c 4.4b, c 15 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 - 4.5a - 4.5a - 3.7b, c - 3b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c A P-Channel - 20 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS N-Channel Parameter Symbol RthJA RthJC Typ. Max. P-Channel Typ. Max. Unit t≤5s 52 65 52 65 Maximum Junction-to-Ambientb, f °C/W Maximum Junction-to-Case (Drain) Steady State 12.5 16 12.5 16 Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 www.vishay.com 1 New Product SiA519EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA ID = - 250 µA ID = 250 µA ID = - 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS = - 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 4.5 V VDS ≤ - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 4.2 A Drain-Source On-State Resistanceb RDS(on) VGS = - 4.5 V, ID = - 2.9 A VGS = 2.5 V, ID = 3.3 A VGS = - 2.5 V, ID = - 2.3 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 5.5 A Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 3.7 A N-Channel VDS = 10 V, VGS = 4.5 V, ID = 5.5 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 3.7 A f = 1 MHz N-Ch N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.7 0.2 350 340 82 105 50 95 7.7 10.5 3.7 5.3 0.85 0.75 0.95 2 3.5 10 7 20 Ω 12 16 6 8 nC pF gfs VDS = 10 V, ID = 4.2 A VDS = - 10 V, ID = - 2.9 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 - 10 0.032 0.074 0.053 0.113 12 7 0.040 0.090 0.065 0.137 S Ω 0.6 - 0.5 20 - 20 23 - 11 - 3.3 2.6 1.4 - 1.3 ± 0.5 ± 0.5 ± 90 ±8 1 -1 10 - 10 A µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 New Product SiA519EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb N-Channel IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 3 A, dI/dt = - 100 A/µs, TJ = 25 °C IS = 4.4 A, VGS = 0 V IS = - 3 A, VGS = 0 V TC = 25 °C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.8 - 0.8 15 26 8 13 8 14 7 12 ns 4.5 - 4.5 15 - 15 1.2 - 1.2 30 50 20 25 V ns nC A td(on) tr td(off) tf td(on) tr td(off) tf N-Ch N-Channel VDD = 10 V, RL = 2.3 Ω ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 10 V, RL = 3.3 Ω ID ≅ - 3 A, VGEN = - 4.5 V, Rg = 1 Ω P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 10 V, RL = 2.3 Ω ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω P-Channel VDD = - 10 V, RL = 3.3 Ω ID ≅ - 3 A, VGEN = - 10 V, Rg = 1 Ω P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 20 12 20 21 25 16 10 5 5 10 10 15 20 10 10 15 30 20 30 35 40 25 15 10 10 15 15 25 30 15 15 ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 www.vishay.com 3 New Product SiA519EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 10-1 10-2 40 I GSS - Gate Current (mA) IGSS at 25 °C 30 I GSS - Gate Current (A) 10-3 10-4 10-5 10-6 10-7 10-8 10-9 TJ = 25 °C TJ = 150 °C 20 10 0 0 3 6 9 12 15 18 10-10 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 VGS = 5 V thru 3 V 12 I D - Drain Current (A) I D - Drain Current (A) VGS = 2.5 V 9 4 5 Gate Current vs. Gate-Source Voltage 3 6 VGS = 2 V 3 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 TC = 25 °C 1 TC = 125 °C TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.12 500 Transfer Characteristics 0.10 R DS(on) - On-Resistance (Ω) C - Capacitance (pF) 400 Ciss 0.08 VGS = 2.5 V 0.06 300 200 Coss 100 Crss 0.04 VGS = 4.5 V 0.02 0.00 0 3 6 9 12 15 0 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance www.vishay.com 4 Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 New Product SiA519EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID = 5.5 A VGS - Gate-to-Source Voltage (V) 8 VDS = 5 V 6 VDS = 16 V 4 VDS = 10 V 2 R DS(on) - On-Resistance 1.4 VGS = 4.5 V, 2.5 V 1.2 1.6 ID = 4.2 A (Normalized) 1.0 0.8 0 0 2 4 6 8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 100 0.12 On-Resistance vs. Junction Temperature 0.10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2 A; TJ = 125 °C 0.08 ID = 4.2 A; TJ = 125 °C 0.06 ID = 2 A; TJ = 25 °C 0.04 ID = 4.2 A; TJ = 25 °C 10 TJ = 150 °C 1 TJ = 25 °C 0.02 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.3 1.2 1.1 VGS(th) (V) 1.0 ID = 250 µA 0.9 0.8 0.7 0.6 - 50 Power (W) 15 20 On-Resistance vs. Gate-to-Source Voltage 10 5 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage Single Pulse Power (Junction-to-Ambient) Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 www.vishay.com 5 New Product SiA519EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 100 ms 1 s, 10 s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 12 8 10 I D - Drain Current (A) Power Dissipation (W) 6 8 6 Package Limited 4 4 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 New Product SiA519EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 www.vishay.com 7 New Product SiA519EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 10-2 10-3 10-4 I GSS - Gate Current (mA) I GSS - Gate Current (A) 3 10-5 10-6 10-7 10-8 10-9 10-10 10-11 TJ = 150 °C TJ = 25 °C 2 IGSS at 25 °C 1 0 0 3 6 9 12 15 18 10-12 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 VGS = 5 V thru 3.5 V 12 I D - Drain Current (A) VGS = 2.5 V 9 I D - Drain Current (A) VGS = 3 V 4 5 Gate Current vs. Gate-Source Voltage 3 6 VGS = 2 V 3 VGS = 1.5 V 0 0.0 2 TC = 25 °C 1 TC = 125 °C 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.30 800 Transfer Characteristics 0.25 R DS(on) - On-Resistance (Ω) 600 0.20 C - Capacitance (pF) Ciss 400 0.15 VGS = 2.5 V 0.10 VGS = 4.5 V 200 0.05 Crss 0 0 3 6 9 12 15 0 3 Coss 0.00 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance www.vishay.com 8 Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 New Product SiA519EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID = 3.7 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance VDS = 10 V 6 VDS = 5 V 4 VDS = 16 V 2 1.4 VGS = 2.5 V (Normalized) 1.2 VGS = 4.5 V 1.0 1.6 ID = 2.9 A 0.8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge 100 0.30 On-Resistance vs. Junction Temperature 0.25 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 0.20 ID = 1 A, TJ = 125 °C 0.15 ID = 1 A, TJ = 25 °C 0.10 ID = 2.9 A, TJ = 25 °C ID = 2.9 A, TJ = 125 °C TJ = 25 °C 1 0.05 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.0 20 On-Resistance vs. Gate-to-Source Voltage 0.9 15 0.8 VGS(th) (V) Power (W) ID = 250 µA 0.7 10 0.6 5 0.5 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage Single Pulse Power (Junction-to-Ambient) Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 www.vishay.com 9 New Product SiA519EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 ms 10 ms 100 ms 1 s, 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 10 8 8 I D - Drain Current (A) Power Dissipation (W) 6 6 Package Limited 4 4 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 New Product SiA519EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65176. Document Number: 65176 S09-2685-Rev. B, 14-Dec-09 www.vishay.com 11 Package Information Vishay Siliconix PowerPAK® SC70-6L PIN1 e PIN2 b PIN3 L PIN1 e PIN2 b PIN3 L K E1 D1 D1 K PIN6 K2 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL E2 K4 E1 D1 PIN6 K3 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF SINGLE K E3 D2 D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E z Z DETAIL Z SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 0.175 0.675 0 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.95 0.235 2.05 1.50 0.395 0.475 0.65 BSC 0.275 TYP 0.400 TYP 0.240 TYP 0.225 TYP 0.355 TYP 0.275 0.375 0.007 Max 0.80 0.05 0.38 0.25 2.15 1.05 0.335 2.15 1.60 0.445 0.525 Min 0.027 0 0.009 0.006 0.078 0.033 0.005 0.078 0.055 0.014 0.017 INCHES Nom 0.030 0.012 0.008 0.081 0.037 0.009 0.081 0.059 0.016 0.019 0.026 BSC 0.011 TYP 0.016 TYP 0.009 TYP 0.009 TYP 0.014 TYP 0.011 0.015 0.175 0.05 0.275 0.10 Max 0.032 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 0.65 BSC 0.275 TYP 0.320 TYP 0.252 TYP 1.98 0.85 2.05 0.95 Min 0.675 0 0.23 0.15 1.98 0.513 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.613 A1 C DUAL PAD INCHES Max 0.80 0.05 0.38 0.25 2.15 0.713 2.15 1.05 Min 0.027 0 0.009 0.006 0.078 0.020 0.078 0.033 Nom 0.030 0.012 0.008 0.081 0.024 0.081 0.037 Max 0.032 0.002 0.015 0.010 0.085 0.028 0.085 0.041 E1 0.026 BSC 0.011 TYP 0.013 TYP 0.010 TYP 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 2.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 1.600 (0.063) Dimensions in mm/(Inches) 0.650 (0.026) APPLICATION NOTE Return to Index www.vishay.com 12 Document Number: 70487 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1