SIA533EDJ

New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.034 at VGS = 4.5 V N-Channel 12 0.040 at VGS = 2.5 V 0.050 at VGS = 1.8 V 0.070 at VGS = 1.5 V 0.059 at VGS = - 4.5 V P-Channel - 12 0.081at VGS = - 2.5 V 0.115 at VGS = - 1.8 V 0.215 at VGS = - 1.5 V ID (A) 4.5a 4.5a 4.5a 4.5a - 4.5a - 4.5a - 4.5a - 1.5 7.8 nC 5.6 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Typical ESD Protection: N-Channel 1500 V P-Channel 1000 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices • DC/DC Converters PowerPAK® SC-70-6 Dual D1 S1 D1 D1 6 5 2.05 mm G2 4 S2 2.05 mm D2 EHX Part # code XXX Lot Traceability and Date code 1 2 G1 3 D2 S2 Marking Code G1 G2 S1 D2 P-Channel MOSFET Ordering Information: SiA533EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Source Drain Current Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 N-Channel 12 ±8 - 4.5a - 4.5a - 4.5a, b, c - 3.7b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c °C W A P-Channel - 12 V Unit Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 1 New Product SiA533EDJ Vishay Siliconix THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambient b, f P-Channel Typ. 52 12.5 Max. 65 16 Unit °C/W Symbol t≤5s Steady State RthJA RthJC Typ. 52 12.5 Max. 65 16 Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA ID = 250 µA ID = - 250 µA ID = 250 µA ID = - 250 µA VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V VDS = 12 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V VDS = 12 V, VGS = 0 V, TJ = 55 °C VDS = - 12 V, VGS = 0 V, TJ = 55 °C On-State Drain Currentb ID(on) VDS ≥ 5 V, VGS = 4.5 V VDS ≤ - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 4.6 A VGS = - 4.5 V, ID = - 3.6 A VGS = 2.5 V, ID = 4.2 A Drain-Source On-State Resistanceb RDS(on) VGS = - 2.5 V, ID = - 3.1 A VGS = 1.8 V, ID = 3.8 A VGS = - 1.8 V, ID = - 2.6 A VGS = 1.5 V, ID = 1.5 A VGS = - 1.5 V, ID = - 0.5 A Forward Transconductanceb Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Ciss Coss Crss P-Channel VDS = - 6 V, VGS = 0 V, f = 1 MHz VDS = 6 V, ID = 4.6 A VDS = - 6 V, ID = - 3.6 A N-Channel VDS = 6 V, VGS = 0 V, f = 1 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 - 10 0.028 0.048 0.032 0.066 0.038 0.093 0.045 0.120 21 11 420 545 100 192 62 175 pF 0.034 0.059 0.040 0.081 0.050 0.115 0.070 0.215 S Ω 0.4 - 0.4 12 - 12 19 - 5.7 - 2.7 1.7 1.0 - 1.0 ± 0.5 ± 0.5 ±5 ±5 1 -1 10 - 10 A µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit www.vishay.com 2 Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamica Symbol Test Conditions VDS = 10 V, VGS = 10 V, ID = 5.9 A VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A N-Channel VDS = 10 V, VGS = 4.5 V, ID = 5.9 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A f = 1 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. 10 13 5.6 7.8 0.7 1.3 0.85 2.3 3.5 7 Max. 15 20 8.5 12 Unit Total Gate Charge Qg nC 0.7 1.4 7 14 Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb N-Channel IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C P-Channel IF = - 3.7 A, dI/dt = - 100 A/µs, TJ = 25 °C IS = 4.8 A, VGS = 0 V IS = - 3.7 A, VGS = 0 V TC = 25 °C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 4.5 - 4.5 20 - 15 1.2 - 1.2 20 50 10 20 Symbol Test Conditions N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. 10 15 10 15 20 25 10 10 5 5 10 10 20 25 10 10 Max. 15 25 15 25 30 40 15 15 10 10 15 15 30 40 15 15 Unit td(on) tr td(off) tf td(on) tr td(off) tf N-Channel VDD = 6 V, RL = 1.3 Ω ID ≅ 4.8 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.6 Ω ID ≅ - 3.7 A, VGEN = - 4.5 V, Rg = 1 Ω ns N-Channel VDD = 6 V, RL = 1.3 Ω ID ≅ 4.8 A, VGEN = 8 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.6 Ω ID ≅ - 3.7 A, VGEN = - 8 V, Rg = 1 Ω A 0.85 - 0.87 10 25 5 10 5.5 17 4.5 8 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 3 New Product SiA533EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 10-2 10-3 2.0 I G - Gate Current (mA) TJ = 25 °C 1.5 I GSS - Gate Current (A) 10-4 10-5 10-6 10-7 10-8 10-9 TJ = 25 °C TJ = 150 °C 1.0 0.5 0 0 3 6 9 12 15 10-10 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 20 VGS = 5 V thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 8 10 Gate Current vs. Gate-Source Voltage 12 VGS = 1.5 V 8 6 TC = 125 °C 4 TC = 25 °C 2 TC = - 55 °C 0 0.0 4 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.08 0.07 R DS(on) - On-Resistance (Ω) VGS = 1.5 V C - Capacitance (pF) 0.06 0.05 VGS = 1.8 V 0.04 VGS = 2.5 V 0.03 VGS = 4.5 V 0.02 Crss 0.01 0 4 8 12 16 20 0 0 600 Ciss 800 Transfer Characteristics 400 Coss 200 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance www.vishay.com 4 Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 ID = 5.9 A V GS - Gate-to-Source Voltage (V) 1.4 VDS = 6 V RDS(on) - On-Resistance (Normalized) 6 VGS = 1.8 V, 2.5 V, 4.5 V, ID = 4.6 A 1.2 1.6 VGS = 1.5 V, ID = 1.5 A 4 VDS = 3 V VDS = 9.6 V 2 1.0 0.8 0 0 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 100 0.08 On-Resistance vs. Junction Temperature ID = 4.6 A, 125 °C R DS(on) - On-Resistance (Ω) ID = 1.5 A, 125 °C 0.06 ID = 1.5 A, 25 °C I S - Source Current (A) 10 0.04 ID = 4.6 A, 25 °C TJ = 150 °C 1 TJ = 25 °C 0.02 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) ID - Drain Current (A) Source-Drain Diode Forward Voltage 0.8 ID = 250 µA 0.7 15 20 On-Resistance vs. Gate-to-Source Voltage 0.6 VGS(th) (V) Power (W) 0.5 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage Single Pulse Power (Junction-to-Ambient) Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 5 New Product SiA533EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 10 ms 1 ms 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse 0.01 0.1 1 BVDSS Limited 10 100 1 0.1 V DS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 15 8 12 I D - Drain Current (A) Power Dissipation (W) 6 9 4 6 Package Limited 3 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110°C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 7 New Product SiA533EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 10-1 10-2 2.5 10-3 Ig - Gate Current (mA) Ig - Gate Current (mA) 10-4 10-5 10-6 10-7 10-8 10-9 TJ = 25 °C TJ = 150 °C 2.0 1.5 1.0 TJ = 25 °C 0.5 10-10 0.0 0.0 4.0 8.0 12.0 16.0 0.0 4.0 8.0 12.0 16.0 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 VGS = 5 V thru 2 V 12 I D - Drain Current (A) I D - Drain Current (A) 8 10 Gate Current vs. Gate-Source Voltage 9 VGS = 2 V 6 TC = 125 °C 4 TC = 25 °C 2 TC = - 55 °C 6 VGS = 1.5 V 3 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 VGS = 1.5 V VGS = 1.8 V Transfer Characteristics 1000 0.16 RDS(on) - On-Resistance (Ω) C - Capacitance (pF) 800 Ciss 0.12 VGS = 2.5 V 600 0.08 VGS = 4.5 V 400 Coss 0.04 200 Crss 0.00 0 3 6 9 12 15 0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance www.vishay.com 8 Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 ID = 4.7 A VGS - Gate-to-Source Voltage (V) 6 VDS = 6 V RDS(on) - On-Resistance (Normalized) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 VGS = 1.5 V, 1.8 V ID = 1 A VGS = 2.5 V, 4.5 V, ID = 3.6 A 4 VDS = 3 V VDS = 9.6 V 2 0 0 3 6 9 12 15 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 100 0.20 On-Resistance vs. Junction Temperature ID = 3.6 A, 125 °C 0.16 10 RDS(on) - On-Resistance (Ω) ID = 3.6 A, 25 °C I S - Source Current (A) 0.12 TJ = 150 °C 1 TJ = 25 °C 0.08 0.04 ID = 1 A, 125 °C ID = 1 A, 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.0 1.0 2.0 3.0 4.0 5.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.85 0.80 ID = 250 µA 0.75 0.70 On-Resistance vs. Gate-to-Source Voltage 20 15 Power (W) - 25 0 25 50 75 100 125 150 VGS(th) (V) 0.65 0.60 0.55 0.50 0.45 - 50 10 5 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Junction Temperature (°C) Threshold Voltage Single Pulse Power (Junction-to-Ambient) Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 9 New Product SiA533EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 ms 10 ms 100 ms 1 s, 10 s 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 DC 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 12 8 10 ID - Drain Current (A) Power Dissipation (W) 6 8 6 4 4 Package Limited 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65706. Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 11 Package Information Vishay Siliconix PowerPAK® SC70-6L PIN1 e PIN2 b PIN3 L PIN1 e PIN2 b PIN3 L K E1 D1 D1 K PIN6 K2 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL E2 K4 E1 D1 PIN6 K3 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF SINGLE K E3 D2 D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E z Z DETAIL Z SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 0.175 0.675 0 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.95 0.235 2.05 1.50 0.395 0.475 0.65 BSC 0.275 TYP 0.400 TYP 0.240 TYP 0.225 TYP 0.355 TYP 0.275 0.375 0.007 Max 0.80 0.05 0.38 0.25 2.15 1.05 0.335 2.15 1.60 0.445 0.525 Min 0.027 0 0.009 0.006 0.078 0.033 0.005 0.078 0.055 0.014 0.017 INCHES Nom 0.030 0.012 0.008 0.081 0.037 0.009 0.081 0.059 0.016 0.019 0.026 BSC 0.011 TYP 0.016 TYP 0.009 TYP 0.009 TYP 0.014 TYP 0.011 0.015 0.175 0.05 0.275 0.10 Max 0.032 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 0.65 BSC 0.275 TYP 0.320 TYP 0.252 TYP 1.98 0.85 2.05 0.95 Min 0.675 0 0.23 0.15 1.98 0.513 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.613 A1 C DUAL PAD INCHES Max 0.80 0.05 0.38 0.25 2.15 0.713 2.15 1.05 Min 0.027 0 0.009 0.006 0.078 0.020 0.078 0.033 Nom 0.030 0.012 0.008 0.081 0.024 0.081 0.037 Max 0.032 0.002 0.015 0.010 0.085 0.028 0.085 0.041 E1 0.026 BSC 0.011 TYP 0.013 TYP 0.010 TYP 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 2.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 1.600 (0.063) Dimensions in mm/(Inches) 0.650 (0.026) APPLICATION NOTE Return to Index www.vishay.com 12 Document Number: 70487 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1