SIA814DJ

New Product SiA814DJ Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.061 at VGS = 10 V 0.072 at VGS = 4.5 V 0.110 at VGS = 2.5 V ID (A)a 4.5 4.5 4.5 Qg (Typ.) 3.2 nC FEATURES • Halogen-free • LITTLE FOOT® Plus Schottky Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm profile RoHS COMPLIANT SCHOTTKY PRODUCT SUMMARY VKA (V) 30 Vf (V) Diode Forward Voltage 0.56 at 1 A IF (A)a 2 APPLICATIONS • DC/DC Converter for Portable Devices • Load Switch for Portable Devices D PowerPAK SC-70-6 Dual K 2 NC K K D G 3 D 1 A Marking Code GBX 0.75 mm Part # code XXX Lot Traceability and Date code 2.05 mm S Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET A G 6 5 2.05 mm 4 S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) TC = 25 °C Maximum Power Dissipation (MOSFET) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C Maximum Power Dissipation (Schottky) TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS IF IFM ID Symbol VDS VKA VGS Limit 30 30 ± 12 4.5a 4.5a 4.3b, c 3.4b, c 15 4.5a 1.6b, c 2b 3 6.5 5 1.9b, c 1.2b, c 6.8 4.3 1.6b, c 1.0b, c - 55 to 150 260 W A V Unit °C Document Number: 68672 S-81176-Rev. A, 26-May-08 www.vishay.com 1 New Product SiA814DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, g Maximum Junction-to-Case (Drain) (Schottky) t≤5s Steady State t≤5s Steady State Symbol RthJA RthJC RthJA RthJC Typical 52 12.5 62 15 Maximum 65 16 76 18.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. g. Maximum under Steady State conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 4.3 Ω ID ≅ 3.5 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 4.3 Ω ID ≅ 3.5 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 4.3 A VDS = 15 V, VGS = 4.5 V, ID = 4.3 A VDS = 10 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 3.3 A VGS = 4.5 V, ID = 3.1 A VGS = 2.5 V, ID = 0.9 A VDS = 15 V, ID = 3.3 A 15 0.050 0.059 0.090 9 340 45 25 7 3.2 0.9 0.8 2 10 10 15 10 5 12 15 10 15 15 25 15 10 20 25 15 ns Ω 11 5 nC pF 0.061 0.072 0.110 S Ω 0.6 30 27 - 3.7 1.5 ± 100 1 10 V mV/°C V nA µA A Symbol Test Conditions Min. Typ. Max. Unit www.vishay.com 2 Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product SiA814DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 3.5 A, VGS = 0 V 0.8 12 6 8 4 TC = 25 °C 4.5 15 1.2 20 15 A V ns nC ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IF = 0.5 A IF = 0.5 A, TJ = 125 °C IF = 1 A IF = 1 A, TJ = 125 °C Maximum Reverse Leakage Current Junction Capacitance Irm CT V r = 30 V Vr = 30 V, TJ = 85 °C V r = 15 V Min. Typ. 0.37 0.31 0.46 0.41 0.025 0.6 35 Max. 0.45 0.37 0.56 0.50 0.1 6.00 mA pF V Unit Forward Voltage Drop VF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68672 S-81176-Rev. A, 26-May-08 www.vishay.com 3 New Product SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 15 VGS = 10 thru 3 V 12 I D - Drain Current (A) I D - Drain Current (A) 4 5 9 3 6 2 TC = 25 °C 1 TC = 125 °C 3 VGS = 2 V VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.155 500 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.130 C - Capacitance (pF) VGS = 2.5 V 0.105 400 Ciss 300 0.080 VGS = 4.5 V 0.055 VGS = 10 V 0.030 0 3 6 9 12 15 200 100 Coss Crss 0 10 20 30 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 4.3 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance (Normalized) VDS = 24 V VDS = 15 V 1.6 1.8 ID = 3.3 A Capacitance VGS = 10 V, 4.5 V 1.4 VGS = 2.5 V 6 1.2 4 1.0 2 0.8 0 0 2 4 6 8 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 0.20 ID = 3.3 A R DS(on) - On-Resistance (Ω) 0.15 I S - Source Current (A) 10 0.10 TJ = 125 °C TJ = 150 °C TJ = 25 °C 1 0.0 0.05 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.4 1.3 1.2 1.1 VGS(th) (V) 1.0 0.9 0.8 0.7 0.6 0.5 - 50 0 0.001 5 Power (W) 15 20 On-Resistance vs. Gate-to-Source Voltage 10 ID = 250 µA - 25 0 25 50 75 100 125 150 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power (Junction-to-Ambient) 100 µs 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 BVDSS Limited 10 100 100 ms 1 s, 10 s DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68672 S-81176-Rev. A, 26-May-08 www.vishay.com 5 New Product SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 8 8 I D - Drain Current (A) Power Dissipation (W) 6 6 Package Limited 4 4 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product SiA814DJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 68672 S-81176-Rev. A, 26-May-08 www.vishay.com 7 New Product SiA814DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 10 I R - Reverse Current (mA) 1 10-1 10-2 10-3 10-4 10-5 - 50 VR = 30 V VR = 10 V 10 I F - Forward Current (A) 1 TJ = 150 °C TJ = 25 °C - 25 0 25 50 75 100 125 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 T J - Junction Temperature (°C) Reverse Current vs. Junction Temperature 250 VF - Forward Voltage Drop (V) Forward Voltage Drop C T - Junction Capacitance (pF) 200 150 100 50 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 8 Document Number: 68672 S-81176-Rev. A, 26-May-08 New Product SiA814DJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 Notes: 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68672. Document Number: 68672 S-81176-Rev. A, 26-May-08 www.vishay.com 9 Package Information Vishay Siliconix PowerPAK® SC70-6L PIN1 e PIN2 b PIN3 L PIN1 e PIN2 b PIN3 L K E1 D1 D1 K PIN6 K2 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL E2 K4 E1 D1 PIN6 K3 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF SINGLE K E3 D2 D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E z Z DETAIL Z SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 0.175 0.675 0 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.95 0.235 2.05 1.50 0.395 0.475 0.65 BSC 0.275 TYP 0.400 TYP 0.240 TYP 0.225 TYP 0.355 TYP 0.275 0.375 0.007 Max 0.80 0.05 0.38 0.25 2.15 1.05 0.335 2.15 1.60 0.445 0.525 Min 0.027 0 0.009 0.006 0.078 0.033 0.005 0.078 0.055 0.014 0.017 INCHES Nom 0.030 0.012 0.008 0.081 0.037 0.009 0.081 0.059 0.016 0.019 0.026 BSC 0.011 TYP 0.016 TYP 0.009 TYP 0.009 TYP 0.014 TYP 0.011 0.015 0.175 0.05 0.275 0.10 Max 0.032 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 0.65 BSC 0.275 TYP 0.320 TYP 0.252 TYP 1.98 0.85 2.05 0.95 Min 0.675 0 0.23 0.15 1.98 0.513 MILLIMETERS Nom 0.75 0.30 0.20 2.05 0.613 A1 C DUAL PAD INCHES Max 0.80 0.05 0.38 0.25 2.15 0.713 2.15 1.05 Min 0.027 0 0.009 0.006 0.078 0.020 0.078 0.033 Nom 0.030 0.012 0.008 0.081 0.024 0.081 0.037 Max 0.032 0.002 0.015 0.010 0.085 0.028 0.085 0.041 E1 0.026 BSC 0.011 TYP 0.013 TYP 0.010 TYP 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 2.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 1.600 (0.063) Dimensions in mm/(Inches) 0.650 (0.026) APPLICATION NOTE Return to Index www.vishay.com 12 Document Number: 70487 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1