SIA921EDJ

SiA921EDJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.059 at VGS = - 4.5 V 0.098 at VGS = - 2.5 V ID (A) - 4.5a - 4.5a Qg (Typ.) 4.9 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • Typical ESD Protection: 1700 V • High Speed Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6 Dual • Load Switch, PA Switch and Battery Switch for Portable Devices S1 S2 • DC/DC Converters Marking Code 1 S1 2 G1 D1 D1 6 G2 5 2.05 mm 4 S2 D2 2.05 mm 3 D2 DFX Part # code XXX Lot Traceability and Date code G1 G2 D1 D2 P-Channel MOSFET Ordering Information: SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ± 12 - 4.5a - 4.5a - 4.5a, b, c - 3.7b, c - 15 - 4.5a - 1.6b, c 7.8 5 1.9b, c 1.2b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) b, f t≤5s Steady State Symbol RthJA RthJC Typical 52 12.5 Maximum 65 16 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 °C/W. Document Number: 64734 S09-2310-Rev. B, 02-Nov-09 www.vishay.com 1 SiA921EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = 0 V, VGS = ± 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3.6 A VGS = - 2.5 V, ID = - 1.5 A VDS = - 10 V, ID = - 3.6 A VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A f = 1 MHz VDD = - 10 V, RL = 2.7 Ω ID ≅ - 3.7 A, VGEN = - 4.5 V, Rg = 1 Ω - 15 0.048 0.080 11 0.059 0.098 - 0.5 - 20 - 14 2.5 - 1.4 ±1 ± 10 -1 - 10 A Ω S µA V mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb 15 7.1 1.3 2.1 6.3 20 20 25 10 5 23 11 nC Ω 30 30 40 15 10 20 40 15 - 4.5 - 15 ns VDD = - 10 V, RL = 2.7 Ω ID ≅ - 3.7 A, VGEN = - 10 V, Rg = 1 Ω 12 25 10 TC = 25 °C IS = - 3.7 A, VGS = 0 V - 0.9 15 IF = - 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C 6 8.5 6.5 A V ns nC ns - 1.2 30 12 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64734 S09-2310-Rev. B, 02-Nov-09 SiA921EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 0.5 25 °C, unless otherwise noted 10-2 10-3 0.4 IG - Gate Current (mA) 10-4 IG - Gate Current (A) IGSS at 150 °C 0.3 IGSS at 25 °C (mA) 0.2 10-5 10-6 IGSS at 25 °C 10-7 10-8 0.1 10-9 0.0 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) 10-10 0 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage 15 VGS = 10 V thru 3 V 12 I D - Drain Current (A) VGS = 2.5 V I D - Drain Current (A) 4 5 Gate Current vs. Gate-to-Source Voltage 9 VGS = 2 V 3 6 2 TC = 25 °C 1 TC = 125 °C 0 0.0 TC = - 55 °C 0.5 1.0 1.5 2.0 3 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 1000 Transfer Characteristics R DS(on) - On-Resistance (Ω) 800 0.15 C - Capacitance (pF) Ciss 600 0.10 VGS = 2.5 V 400 0.05 VGS = 4.5 V 200 Crss 0.00 0 3 6 9 12 15 0 0 4 Coss 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Document Number: 64734 S09-2310-Rev. B, 02-Nov-09 Capacitance www.vishay.com 3 SiA921EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID = 4.6 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance 1.3 (Normalized) 1.2 1.1 1.0 0.9 0.8 0 0 3 6 9 12 15 0.7 - 50 1.5 1.4 ID = 3.6 A VGS = 4.5 V 6 VDS = 10 V 4 VDS = 16 V VGS = 2.5 V 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 100 0.20 On-Resistance vs. Junction Temperature R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.15 ID = 3.6 A; TJ = 25 °C 0.10 ID = 1 A; TJ = 125 °C ID = 1 A; TJ = 25 °C ID = 3.6 A; TJ = 125 °C 10 TJ = 150 °C TJ = 25 °C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.0 20 On-Resistance vs. Gate-to-Source Voltage 0.9 15 0.8 VGS(th) (V) Power (W) 0.7 ID = 250 µA 0.6 10 5 0.5 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient www.vishay.com 4 Document Number: 64734 S09-2310-Rev. B, 02-Nov-09 SiA921EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* 10 I D - Drain Current (A) 100 µs 1 TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 ms 10 ms 100 ms 1 s, 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 12 8 10 I D - Drain Current (A) Power Dissipation (W) 6 8 6 Package Limited 4 4 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64734 S09-2310-Rev. B, 02-Nov-09 www.vishay.com 5 SiA921EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64734. www.vishay.com 6 Document Number: 64734 S09-2310-Rev. B, 02-Nov-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1