New Product
SiB404DK
Vishay Siliconix
N-Channel 12 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.019 at VGS = 4.5 V 12 0.022 at VGS = 2.5 V 0.026 at VGS = 1.8 V 0.065 at VGS = 1.2 V ID (A)a 9 9 9 3 9.6 nC Qg (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm Profile • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK SC-75-6L-Single
D
1 D 2 D 3 6 D 5 D S 4 S 1.60 mm G
APPLICATIONS
• Portable Devices • Low Voltage Gate Drive Load Switch
Marking Code
AIX Part # code XXX Lot Traceability and Date code Ordering Information: SiB404DK-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET G
1.60 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 12 ±5 9a 9a 8.9b, c 7.1b, c 35 9a 2.1b, c 13 8.4 2.5b, c 1.6b, c - 55 to 150 260 °C W A Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)
b, f
t5s Steady State
Symbol RthJA RthJC
Typical 41 7.5
Maximum 51 9.5
Unit °C/W
Notes: a. Package limited, TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 °C/W. Document Number: 67099 S11-0236-Rev. A, 14-Feb-11 www.vishay.com 1
New Product
SiB404DK
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 5 V VDS = 12 V, VGS = 0 V VDS = 12 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3 A VGS = 2.5 V, ID = 2 A VGS = 1.8 V, ID = 1 A VGS = 1.2 V, ID = 0.5 A Forward Transconductancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 7 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 7 A, VGS = 0 V 0.8 15 5 8 7 TC = 25 °C 9 35 1.2 30 10 A V ns nC ns gfs Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 6 V, RL = 0.86 ID 7 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz 0.6 VDS = 6 V, VGS = 4.5 V, ID = 9 A VDS = 10 V, ID = 3 A 15 0.015 0.018 0.021 0.035 30 9.6 0.9 1.7 3.2 5 20 20 10 6.4 10 40 40 20 ns 15 nC 0.019 0.022 0.026 0.065 S 0.35 12 12 - 2.5 0.8 ± 100 1 10 V mV/°C V nA µA A Symbol Test Conditions Min. Typ. Max. Unit
Drain-Source On-State Resistancea
RDS(on)
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 67099 S11-0236-Rev. A, 14-Feb-11
New Product
SiB404DK
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
35 VGS = 5 V thru 2 V 30 8 ID - Drain Current (A) 25 20 15 10 5 0 0.0 VGS = 1.5 V ID - Drain Current (A) 6 10
4
TC = 25 °C TC = 125 °C
2 VGS = 1 V 0 0.0 TC = - 55 °C
0.5
1.0
1.5
2.0
0.3
0.6
0.9
1.2
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
0.06 VGS = 1.2 V 0.05 RDS(on) - On-Resistance (Ω) C - Capacitance (pF) 1000 1200
Transfer Characteristics
Ciss 800
0.04 VGS = 1.8 V 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V
600
400 Coss 200 Crss
0.01
0.00 0 5 10 15 20 25 30 35
0 0 2 4 6 8 10 12
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5 ID = 9 A 4 RDS(on) - On-Resistance (Normalized) VDS = 3 V 1.4 1.6
Capacitance
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 3 A 1.2
3 VDS = 6 V 2 VDS = 9.6 V
1.0
VGS = 1.2 V, ID = 0.5 A
1
0.8
0 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67099 S11-0236-Rev. A, 14-Feb-11
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New Product
SiB404DK
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100 0.06 ID = 3 A 0.05 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A)
10
0.04
0.03 TJ = 125 °C 0.02 TJ = 25 °C
1
TJ = 25 °C
0.01
0.1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.7
On-Resistance vs. Gate-to-Source Voltage
20
0.6
15
0.5
0.4 ID = 250 μA 0.3
Power (W)
100 125 150
VGS(th) (V)
10
5
0.2
0.1 - 50
- 25
0
25
50
75
0 0.001
0.01
0.1
1 Pulse (s)
10
100
1000
TJ - Temperature (°C)
Threshold Voltage
1000
Single Pulse Power, Junction-to-Ambient
100 ID - Drain Current (A)
Limited by RDS(on)*
10
100 μs 1 ms
1
10 ms TA = 25 °C Single Pulse BVDSS Limited 100 ms 1 s, 10 s DC
0.1
0.01 0.1
1
10
100
VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 67099 S11-0236-Rev. A, 14-Feb-11
New Product
SiB404DK
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
25
15
20 ID - Drain Current (A)
12
15
Power (W)
9
10
Package Limited
6
5
3
0 0 25 50 75 100 125 150 TC - Case Temperature (°C)
0 25 50 75 100 125 150
Current Derating*
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 67099 S11-0236-Rev. A, 14-Feb-11
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New Product
SiB404DK
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 105 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.05 0.02 Single Pulse
0.1 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67099.
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Document Number: 67099 S11-0236-Rev. A, 14-Feb-11
Package Information
Vishay Siliconix
PowerPAK® SC75-6L
PIN1
e b e b
PIN2
PIN3 L
PIN1
PIN2
PIN3 L
D2 E1
E2 K4
E1
K
D1
K
E3
D1
D1
K
PIN6 K3
PIN5
PIN4 K1 K2
PIN6 K2
PIN5 K1
PIN4 K2
BACKSIDE VIEW OF SINGLE
BACKSIDE VIEW OF DUAL
D
A
Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating
E
A1 C
z
Z
DETAIL Z
SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 0.15 0.675 0 0.18 0.15 1.53 0.57 0.10 1.53 1.00 0.20 0.32 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.67 0.20 1.60 1.10 0.25 0.37 0.50 BSC 0.180 TYP 0.275 TYP 0.200 TYP 0.255 TYP 0.300 TYP 0.25 0.35 0.006 Max 0.80 0.05 0.33 0.25 1.70 0.77 0.30 1.70 1.20 0.30 0.42 Min 0.027 0 0.007 0.006 0.060 0.022 0.004 0.060 0.039 0.008 0.013 INCHES Nom 0.030 0.010 0.008 0.063 0.026 0.008 0.063 0.043 0.010 0.015 0.020 BSC 0.007 TYP 0.011 TYP 0.008 TYP 0.010 TYP 0.012 TYP 0.010 0.014 0.15 0.03 0.25 0.08 Max 0.032 0.002 0.013 0.010 0.067 0.030 0.012 0.067 0.047 0.012 0.017 0.50 BSC 0.245 TYP 0.320 TYP 0.200 BSC 1.53 0.51 1.60 0.61 Min 0.675 0 0.18 0.15 1.53 0.34 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.44
E1
DUAL PAD INCHES Max 0.80 0.05 0.33 0.25 1.70 0.54 1.70 0.71 Min 0.027 0 0.007 0.006 0.060 0.013 0.060 0.020 Nom 0.030 0.010 0.008 0.063 0.017 0.063 0.024 Max 0.032 0.002 0.013 0.010 0.067 0.021 0.067 0.028
0.020 BSC 0.010 TYP 0.013 TYP 0.008 TYP
0.35 0.13
0.006 0.001
0.010 0.003
0.014 0.005
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single
1.250 (0.049) 0.250 (0.01) 0.250 (0.01) 0.400 (0.016) 0.500 (0.02)
0.300 (0.012) 0.180 (0.007) 0.370 (0.015)
1.700 (0.067)
1.100
(0.043)
0.620 (0.024)
2.000 (0.079)
0.200 (0.008) 0.300 (0.012)
0.300 (0.012)
1
0.545 (0.021) 0.250 (0.01) 0.670 (0.026) 2.000 (0.079) Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70488 Revision: 21-Jan-08
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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