SIB914DK

New Product SiB914DK Vishay Siliconix Dual N-Channel 1.2-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.113 at VGS = 4.5 V 0.138 at VGS = 2.5 V 8 0.190 at VGS = 1.8 V 0.280 at VGS = 1.5 V 0.480 at VGS = 1.2 V ID (A)g 1.5a 1.5a 1.5 a FEATURES Qg (Typ.) 1.5 nC • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance RoHS COMPLIANT 1.0 0.3 APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices • DC/DC Converter D1 D2 Marking Code PowerPAK SC75-6L-Dual 1 S1 2 G1 D1 D1 6 G2 5 1.60 mm 4 S2 D2 1.60 mm 3 D2 CBX Part # code XXX Lot Traceability and Date code S1 S2 N-Channel MOSFET G1 G2 Ordering Information: SiB914DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 8 ±5 1.5a 1.5a 1.5a, b, c 1.5a, b, c 6 1.5a 0.9b, c 3.1 2.0 1.1b, c 0.7b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t≤5s RthJA 90 115 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 32 40 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 125 °C/W. g. Based on TC = 25 °C. Document Number: 68792 S-81946-Rev. A, 25-Aug-08 www.vishay.com 1 Parameter New Product SiB914DK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 5 V VDS = 8 V, VGS = 0 V VDS = 8 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 2.5 A VGS = 2.5 V, ID = 2.2 A Drain-Source On-State Resistancea RDS(on) VGS = 1.8 V, ID = 1.9 A VGS = 1.5 V, ID = 1.0 A VGS = 1.2 V, ID = 0.1 A Forward Transconductancea gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 2.0 A, VGS = 0 V 0.7 10 2 4 6 TC = 25 °C VDD = 4 V, RL = 2 Ω ID ≅ 2.0 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz 0.7 VDS = 4 V, VGS = 5 V, ID = 2.5 A VDS = 4 V, VGS = 4.5 V, ID = 2.5 A VDS = 4 V, VGS = 0 V, f = 1 MHz VDS = 4 V, ID = 2.5 A Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 1.5c 6 1.2 15 4 A V ns nC ns 125 68 35 1.7 1.5 0.25 0.25 3.5 4 7 22 9 7.0 8 14 33 19 ns Ω 2.6 2.3 nC pF 6 0.090 0.110 0.150 0.200 0.280 10 0.113 0.138 0.190 0.280 0.480 S Ω 0.35 8 8.3 - 2.1 0.8 ± 100 1 10 V mV/°C V nA µA A Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68792 S-81946-Rev. A, 25-Aug-08 New Product SiB914DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 VGS = 5 thru 2.5 V 5 I D - Drain Current (A) VGS = 2 V I D - Drain Current (A) 1.0 0.8 4 0.6 3 VGS = 1.5 V 2 0.4 TC = 25 °C 0.2 TC = 125 °C 0.0 0.0 TC = - 55 °C 0.3 0.6 0.9 1.2 1.5 1 VGS = 1 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.5 200 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.4 C - Capacitance (pF) 160 Ciss 120 Coss 80 0.3 VGS = 1.2 V 0.2 VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V 0.1 VGS = 4.5 V 0 1 2 3 4 5 6 40 Crss 0.0 0 0 2 4 6 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 5 ID = 2.5 A VGS - Gate-to-Source Voltage (V) 4 VDS = 4 V 3 VDS = 6.4 V R DS(on) - On-Resistance (Normalized) 1.5 1.7 Capacitance VGS = 1.8 V; ID = 1.9 A 1.3 VGS = 2.5 V; ID = 2.2 A 2 1.1 VGS = 4.5 V; ID = 2.5 A 1 0.9 0 0.0 0.4 0.8 1.2 1.6 2.0 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge Document Number: 68792 S-81946-Rev. A, 25-Aug-08 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiB914DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.25 ID = 2.5 A TJ = 25 °C R DS(on) - On-Resistance (Ω) 0.20 I S - Source Current (A) TJ = 150 °C 1 0.15 TJ = 125 °C 0.10 TJ = 25 °C 0.05 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.8 8 On-Resistance vs. Gate-to-Source Voltage 0.7 6 VGS(th) (V) 0.6 ID = 250 µA 0.5 Power (W) 4 2 0.4 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 10 Limited by RDS(on)* Single Pulse Power, Junction-to-Ambient 100 µs I D - Drain Current (A) 1 1 ms 10 ms 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.1 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 68792 S-81946-Rev. A, 25-Aug-08 New Product SiB914DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 4 I D - Drain Current (A) 3 2 Package Limited 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4 1.5 1.2 3 Power (W) Power (W) 0 25 50 75 100 125 150 0.9 2 0.6 1 0.3 0 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Case Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68792 S-81946-Rev. A, 25-Aug-08 www.vishay.com 5 New Product SiB914DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 Notes: 0.1 0.02 Single Pulse 0.05 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 0.1 10-4 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68792. www.vishay.com 6 Document Number: 68792 S-81946-Rev. A, 25-Aug-08 Package Information Vishay Siliconix PowerPAK® SC75-6L PIN1 e b e b PIN2 PIN3 L PIN1 PIN2 PIN3 L D2 E1 E2 K4 E1 K D1 K E3 D1 D1 K PIN6 K3 PIN5 PIN4 K1 K2 PIN6 K2 PIN5 K1 PIN4 K2 BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL D A Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating E A1 C z Z DETAIL Z SINGLE PAD DIM Min A A1 b C D D1 D2 E E1 E2 E3 e K K1 K2 K3 K4 L T ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 0.15 0.675 0 0.18 0.15 1.53 0.57 0.10 1.53 1.00 0.20 0.32 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.67 0.20 1.60 1.10 0.25 0.37 0.50 BSC 0.180 TYP 0.275 TYP 0.200 TYP 0.255 TYP 0.300 TYP 0.25 0.35 0.006 Max 0.80 0.05 0.33 0.25 1.70 0.77 0.30 1.70 1.20 0.30 0.42 Min 0.027 0 0.007 0.006 0.060 0.022 0.004 0.060 0.039 0.008 0.013 INCHES Nom 0.030 0.010 0.008 0.063 0.026 0.008 0.063 0.043 0.010 0.015 0.020 BSC 0.007 TYP 0.011 TYP 0.008 TYP 0.010 TYP 0.012 TYP 0.010 0.014 0.15 0.03 0.25 0.08 Max 0.032 0.002 0.013 0.010 0.067 0.030 0.012 0.067 0.047 0.012 0.017 0.50 BSC 0.245 TYP 0.320 TYP 0.200 BSC 1.53 0.51 1.60 0.61 Min 0.675 0 0.18 0.15 1.53 0.34 MILLIMETERS Nom 0.75 0.25 0.20 1.60 0.44 E1 DUAL PAD INCHES Max 0.80 0.05 0.33 0.25 1.70 0.54 1.70 0.71 Min 0.027 0 0.007 0.006 0.060 0.013 0.060 0.020 Nom 0.030 0.010 0.008 0.063 0.017 0.063 0.024 Max 0.032 0.002 0.013 0.010 0.067 0.021 0.067 0.028 0.020 BSC 0.010 TYP 0.013 TYP 0.008 TYP 0.35 0.13 0.006 0.001 0.010 0.003 0.014 0.005 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Dual 2.2 (0.087) 1.25 (0.049) 0.25 (0.01) 2.2 (0.087) (0.024) 0.61 (0,0) 0.32 (0.013) (0.063) 1.6 0.44 (0.017) 0.25 (0.01) 0.375 (0.015) 1 Return to Index 0.5 (0.02) Dimensions in mm/(Inches) APPLICATION NOTE Document Number: 70489 Revision: 28-Oct-08 www.vishay.com 15 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1