SIE800DF

SiE800DF New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 30 rDS(on) (Ω) 0.0072 at VGS = 10 V 0.0115 at VGS = 4.5 V Silicon Limit 90 73 Package Qg (Typ) Limit 50 12 nC 50 FEATURES • Extremely Low Qgd WFET Technology for Low Switching Losses RoHS • TrenchFET® Power MOSFET COMPLIANT • Ultra Low Thermal Resistance Using ® Top-Exposed PolarPAK Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested Package Drawing PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS • VRM • DC/DC Conversion: High-Side • Synchronous Rectification D D S G D D D 1 G 2 S 3 S 4 D 5 5 4 3 2 1 G Top View Top surface is connected to pins 1, 5, 6, and 10 Bottom View S N-Channel MOSFET For Related Documents Ordering Information: SiE800DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH ID Symbol VDS VGS Limit 30 ± 20 90 (Silicon Limit) 50a (Package Limit) 50a 20.6b, c 16.5b, c 60 50a 4.3b, c 40 80 104 66 5.2b, c 3.3b, c - 50 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS mJ TC = 25 °C TC = 70 °C PD W Maximum Power Dissipation TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 50 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73199 S-60784-Rev. D, 08-May-06 www.vishay.com 1 SiE800DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top)a Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). a, b t ≤ 10 sec Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 1 2.8 Maximum 24 1.2 3.4 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a Symbol VDS ΔVDS /TJ ΔVGS(th) /TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 9 A VDS = 15 V, ID = 11 A Min 30 Typ Max Unit V 1.5 34.5 - 6.7 2.2 mV/°C 3.0 ± 100 1 10 0.0072 0.0115 V nA µA A 25 0.006 0.0095 50 1600 750 120 23 12 5.6 3 1.3 20 15 15 8 15 15 25 10 Ω S VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 18.5 A VDS = 15 V, VGS = 4.5 V, ID = 18.5 A f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω pF 35 18 nC Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 1.95 30 25 25 15 25 25 40 15 50 60 1.2 70 65 ns IS ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. TC = 25 °C IS = 1 0 A IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 0.8 45 41 21 24 A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73199 S-60784-Rev. D, 08-May-06 SiE800DF Vishay Siliconix TYPICAL CHARACTERISTICS 60 VGS = 10 thru 5 V 50 I D – Drain Current (A) 4V 40 I D – Drain Current (A) 20 25 °C, unless noted 25 15 30 10 TC = 125 °C 5 25 °C 20 10 3V 0 0.0 0.4 0.8 1.2 1.6 2.0 - 55 °C 0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics 0.014 2500 Transfer Characteristics rDS(on) – On-Resistance (mΩ) 0.012 C – Capacitance (pF) VGS = 4.5 V 0.010 2000 Coss 1500 0.008 VGS = 10 V 0.006 1000 Ciss 500 Crss 0.004 0 10 20 30 40 50 60 0 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 V GS – Gate-to-Source Voltage (V) ID = 18.5 A 8 VDS = 15 V 6 VDS = 24 V 4 rDS(on) – On-Resistance (Normalized) 1.8 ID = 10.8 A Capacitance 1.6 1.4 VGS = 10 V 1.2 VGS = 4.5 V 1.0 2 0.8 0 0 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73199 S-60784-Rev. D, 08-May-06 www.vishay.com 3 SiE800DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 60 rDS(on) – Drain-to-Source On-Resistance (Ω) 0.020 ID = 10.8 A 0.016 I S – Source Current (A) 10 TJ = 150 °C 0.012 TA = 125 °C 0.008 TA = 25 °C 0.004 0 2 4 6 8 10 TJ = 25 °C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 3.0 50 On-Resistance vs. Gate-to-Source Voltage 2.6 ID = 250 µA Power (W) VGS(th) (V) 2.2 40 30 1.8 20 1.4 10 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 1000 TJ – Temperature (°C) Threshold Voltage 100 *Limited by rDS(on) Single Pulse Power, Junction-to-Ambient 1 ms 10 I D – Drain Current (A) 10 ms 100 ms 1 1s 10 s 0.1 TA = 25 °C Single Pulse dc 0.01 0.1 *VGS 1 10 100 VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73199 S-60784-Rev. D, 08-May-06 SiE800DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 120 120 100 ID – Drain Current (A) Power Dissipation (W) Package Limited 20 100 80 80 60 60 40 40 20 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC – Case Temperature (°C) TC – Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73199 S-60784-Rev. D, 08-May-06 www.vishay.com 5 SiE800DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55 °C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Normalized Effective Transient Thermal Impedance 0.02 0.01 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73199. www.vishay.com 6 Document Number: 73199 S-60784-Rev. D, 08-May-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1