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SIE808DF

SIE808DF

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SIE808DF - N-Channel 20-V (D-S) MOSFET - Vishay Siliconix

  • 数据手册
  • 价格&库存
SIE808DF 数据手册
SPICE Device Model SiE808DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74167 S-60411Rev. A, 20-Mar-06 www.vishay.com 1 SPICE Device Model SiE808DF Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 2.3 2562 0.0013 0.0022 234 0.84 Measured Data Unit VGS(th) ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 µA VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 25 A VDS = 10 V, ID = 25 A IS = 10 A V A 0.0013 0.0021 95 0.80 Ω S V Drain-Source On-State Resistancea Forward Transconductancea Forward Voltagea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Ciss Coss Crss Qg Qgs Qgd VDS = 1 0V, VGS = 10 V, ID = 20 A VDS = 10 V, VGS = 0 V, f = 1 MHz 6664 1585 472 121 58 VDS = 10 V, VGS = 4.5 V, ID = 20 A 26 28 8800 1600 600 102 46 26 28 nC pF Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 74167 S-60411Rev. A, 20-Mar-06 SPICE Device Model SiE808DF Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED) Document Number: 74167 S-60411Rev. A, 20-Mar-06 www.vishay.com 3
SIE808DF 价格&库存

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SIE808DF-T1-E3
  •  国内价格
  • 1+20.34857
  • 30+19.62183
  • 100+18.8951
  • 500+17.44163
  • 1000+16.7149
  • 2000+16.27886

库存:0