SIE820DF-T1-GE3

SiE820DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 20 RDS(on) (Ω) 0.0035 at VGS = 4.5 V 0.0064 at VGS = 2.5 V Silicon Limit 136 100 Package Limit 50 43 nC 50 Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC Package Drawing www.vishay.com/doc?73398 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D S G D • VRM • DC/DC Conversion • Synchronous Rectification D D 1 G 2 S 3 S 4 D 5 5 4 3 2 1 G Top View Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE820DF-T1-E3 (Lead (Pb)-free) SiE820DF-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET For Related Documents www.vishay.com/ppg?74447 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH ID Symbol VDS VGS Limit 20 ± 12 136 (Silicon Limit) 50a (Package Limit) 50a 30b, c 24b, c 80 50a 4.3b, c 30 45 104 66 5.2b, c 3.3b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS mJ TC = 25 °C TC = 70 °C PD Maximum Power Dissipation W TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 50 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 1 SiE820DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top)a Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). a, b t ≤ 10 s Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 1 2.8 Maximum 24 1.2 3.4 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 18 A VGS = 2.5 V, ID = 13.4 A VDS = 10 V, ID = 18 A Min. 20 Typ. Max. Unit V 0.6 20 - 4.8 1.4 mV/°C 2 ± 100 1 10 0.0035 0.0064 V nA µA A 25 0.0029 0.0053 106 4300 950 450 95 43 11.5 10 1.0 35 115 105 30 15 35 55 10 Drain-Source On-State Resistance Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ω S VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 20 A VDS = 10 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 10 V, RL = 1.0 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω pF 143 65 Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Drain-Source Body Diode Characteristics IS Continuous Source-Drain Diode Current ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. nC Ω VDD = 10 V, RL = 1.0 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 1.5 55 175 160 45 25 55 85 15 50 80 1.2 150 150 ns TC = 25 °C IS = 1 0 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 0.8 101 100 75 25 A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 VGS = 5 V thru 2.5 V 16 60 I D - Drain Current (A) I D - Drain Current (A) 12 20 40 8 TC = 125 °C 20 4 VGS = 2 V 0 0.0 0 1.0 TC = 25 °C TC = - 55 °C 1.5 2.0 1.4 1.8 2.2 2.6 3.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.008 7200 Transfer Characteristics R DS(on) - On-Resistance (m ) 0.007 VGS = 2.5 V C - Capacitance (pF) 6000 0.006 4800 Coss 0.005 3600 0.004 VGS = 4.5 V 0.003 2400 Ciss 1200 Crss 0 5 10 15 20 0.002 0 20 40 ID - Drain Current (A) 60 80 0 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A 8 VDS = 16 V 6 RDS(on) - On-Resistance (Normalized) VDS = 10 V 1.4 1.6 I D = 18 A Capacitance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 1.2 VGS = 2.5 V 4 1.0 2 0.8 0 0 20 40 60 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 3 SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 R DS(on) - Drain-to-Source On-Resistance ( ) 0.008 ID = 18 A 0.007 I S - Source Current (A) 0.006 TJ = 150 °C 10 TJ = 25 °C 0.005 TA = 125 °C 0.004 0.003 TA = 25 °C 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD - Source-to-Drain Voltage (V) 0.002 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.8 50 On-Resistance vs. Gate-to-Source Voltage 1.6 40 ID = 250 µA Power (W) 30 1.4 VGS(th) (V) 1.2 20 1.0 10 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* Single Pulse Power, Junction-to-Ambient 1 ms 10 I D - Drain Current (A) 10 ms 100 ms 1 1s TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.01 * VGS 0.1 1 10 100 10 s DC VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 160 140 Power Dissipation (W) 120 I D - Drain Current (A) 100 80 60 40 20 0 0 25 50 75 100 125 150 20 Package Limited 120 100 80 60 40 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 5 SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse P DM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 55 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74447. www.vishay.com 6 Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 Package Information Vishay Siliconix PolarPAKt M4 10 T5 D (Option S) M4 9 G 8 S 7 S 6 D Q Product datasheet/information page contain links to applicable package drawing. T2 T3 E1 T4 T1 VIEW A M3 T3 M2 M3 M1 T5 D 1 G 2 S 3 (Top View) S 4 D 5 A Q c 6 Q Q D H1 b1 H4 7 S b3 E 8 S 9 G H3 b2 H2 10 D b1 H1 Z P1 D1 D K4 A1 K4 P1 b4 b4 DETAIL Z b5 D 5 b5 S 4 VIEW A (Bottom View) S 3 b5 G 2 D 1 Document Number: 73398 10-Jun-05 www.vishay.com K1 1 Package Information Vishay Siliconix MILLIMETERS Dim A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 Q Min 0.75 0.00 0.48 0.41 2.19 0.89 0.23 0.20 6.00 5.74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0 0_ INCHES Min 0.030 0.000 0.019 0.016 0.086 0.035 0.009 0.008 0.236 0.226 0.197 0.187 0.009 0.020 0.012 0.020 0.166 0.009 0.169 0.135 0.009 0.002 0.006 0.137 0.22 0.051 0.154 0.000 0_ Nom 0.80 − 0.58 0.51 2.29 1.04 0.33 0.25 6.15 5.89 5.16 4.90 − − 0.41 − 4.37 − 4.50 3.58 − − 0.20 3.64 0.76 − − 0.18 10_ Max 0.85 0.05 0.68 0.61 2.39 1.19 0.43 0.30 6.30 6.04 5.31 5.05 − 0.56 0.51 0.56 4.52 − 4.70 3.73 − − 0.25 4.10 0.95 − − 0.36 12_ Nom 0.031 − 0.023 0.020 0.090 0.041 0.013 0.010 0.242 0.232 0.203 0.193 − − 0.016 − 0.172 − 0.177 0.141 − − 0.008 0.143 0.030 − − 0.007 10_ Max 0.033 0.002 0.027 0.024 0.094 0.047 0.017 0.012 0.248 0.238 0.209 0.199 − 0.022 0.020 0.022 0.178 − 0.185 0.147 − − 0.010 0.150 0.037 − − 0.014 12_ ECN: S−51049—Rev. B, 13-Jun-05 DWG: 5947 Note: Millimeters govern over inches www.vishay.com 2 Document Number: 73398 10-Jun-05 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.410 (0.016) 0.510 (0.020) 0.955 (0.038) 0.955 (0.038) 0.895 (0.035) 6.310 (0.248) 4.520 (0.178) + 0.895 (0.035) 0.580 (0.023) 0.510 (0.020) 2.290 (0.090) 0.580 (0.023) Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) APPLICATION NOTE Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1