SIE860DF_09

New Product SiE860DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY ID (A) VDS (V) 30 RDS(on) (Ω)e 0.0021 at VGS = 10 V 0.0028 at VGS = 4.5 V Silicon Limit 178 154 Package Qg (Typ.) Limit 60a 60a 34 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC Package Drawing www.vishay.com/doc?68796 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS • • • • VRM, POL DC/DC Conversion Synchronous Rectification Server G D D D S G D D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 S N-Channel MOSFET For Related Documents www.vishay.com/ppg?68786 Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE860DF-T1-E3 (Lead (Pb)-free) SiE860DF-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH ID Symbol VDS VGS Limit 30 ± 20 178 (Silicon Limit) 60a (Package Limit) 60a 38b, c 31b, c 80 60a 4.3b, c 50 125 104 66 5.2b, c 3.3b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS mJ TC = 25 °C TC = 70 °C PD Maximum Power Dissipation W TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited at 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 1 New Product SiE860DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 0.9 2.7 Maximum 24 1.1 3.3 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 21.7 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 21.7 A Min. 30 Typ. Max. Unit V 30 - 6.1 1.0 2.5 ± 100 1 10 0.0017 0.0023 110 4500 850 300 70 34 14 9 0.9 35 20 50 30 16 10 40 10 0.0021 0.0028 mV/°C V nA µA A Ω S 25 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω pF 105 51 nC Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 1.8 55 30 75 45 25 15 30 15 60 80 1.2 55 45 ns TC = 25 °C IS = 1 0 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 0.8 35 30 21 14 Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 New Product SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 60 VGS = 3 V 10 TC = - 55 °C 6 40 4 TC = 25 °C 2 TC = 125 °C 20 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0030 6000 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.0026 C - Capacitance (pF) VGS = 4.5 V 0.0022 VGS = 10 V 0.0018 5000 Ciss 4000 3000 2000 Coss 1000 Crss 0.0014 0.0010 0 20 40 ID - Drain Current (A) 60 80 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 24 V 4 R DS(on) - On-Resistance 1.6 1.8 ID = 21.7 A Capacitance VGS = 10 V 1.4 (Normalized) VGS = 4.5 V 1.2 1.0 2 0.8 0 0 20 40 60 80 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 3 New Product SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.006 ID = 21.7 A R DS(on) - On-Resistance (Ω) 0.005 I S - Source Current (A) 0.004 TJ = 125 °C 0.003 10 TJ = 150 °C TJ = 25 °C 0.002 TJ = 25 °C 1 0.0 0.001 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.2 2.0 ID = 250 µA 1.8 Power (W) VGS(th) (V) 1.6 1.4 1.2 10 1.0 0.8 - 50 0 0.01 30 40 50 On-Resistance vs. Gate-to-Source Voltage 20 - 25 0 25 50 75 100 125 150 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C Single Pulse 0.01 0.01 DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 New Product SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 120 160 Power Dissipation (W) 90 I D - Drain Current (A) 120 60 80 Package Limited 30 40 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 5 New Product SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 Notes: 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 55 °C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 100 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68786. www.vishay.com 6 Document Number: 68786 S09-1338-Rev. B, 13-Jul-09 Package Information Vishay Siliconix POLARPAK™ OPTION M M4 T5 M1 M4 T3 θ E1 E T4 T1 T2 View A M3 T3 M2 M3 T5 θ c (Top View) A D1 D DETAIL Z b5 b5 b5 0.254 K4 0.127 0.254 P1 K3 A P1 A1 K2 K1 0.203 0.332 0.584 K3 P1 P1 H1 b1 H4 b4 b3 View A b4 H3 b1 H2 b1 H1 Document Number: 68796 Revision: 11-Aug-08 K4 www.vishay.com 1 0.381 θ θ Package Information Vishay Siliconix MILLIMETERS DIM A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K2 K3 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 θ MIN. 0.75 0.00 0.48 0.41 2.19 0.89 0.23 0.20 6.00 5.74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 0.59 1.68 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0 0° NOM. 0.80 0.58 0.51 2.29 1.04 0.33 0.25 6.15 5.89 5.16 4.90 0.41 4.37 0.64 4.50 3.58 0.20 3.64 0.76 0.18 10° MAX. 0.85 0.05 0.68 0.61 2.39 1.19 0.43 0.30 6.30 6.04 5.31 5.05 0.56 0.51 0.56 4.52 0.69 4.70 3.73 0.25 4.10 0.95 0.36 12° MIN. 0.030 0.000 0.019 0.016 0.086 0.035 0.009 0.008 0.236 0.226 0.197 0.187 0.009 0.018 0.012 0.018 0.166 0.023 0.066 0.009 0.169 0.135 0.009 0.002 0.006 0.137 0.022 0.047 0.153 0.000 0° INCHES NOM. 0.031 0.023 0.020 0.090 0.041 0.013 0.010 0.242 0.232 0.203 0.193 0.016 0.172 0.025 0.177 0.141 0.008 0.143 0.030 0.007 10° MAX. 0.033 0.002 0.027 0.024 0.094 0.047 0.017 0.012 0.248 0.238 0.209 0.199 0.022 0.020 0.022 0.178 0.027 0.185 0.147 0.010 0.161 0.037 0.014 12° ECN: T-08441-Rev. A, 11-Aug-08 DWG: 5967 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 68796 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.410 (0.016) 0.510 (0.020) 0.955 (0.038) 0.955 (0.038) 0.895 (0.035) 6.310 (0.248) 4.520 (0.178) + 0.895 (0.035) 0.580 (0.023) 0.510 (0.020) 2.290 (0.090) 0.580 (0.023) Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) APPLICATION NOTE Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1