SIE868DF

New Product SiE868DF Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY ID (A)a VDS (V) 40 RDS(on) (Ω) 0.0023 at VGS = 10 V 0.0029 at VGS = 4.5 V Silicon Limit 169 150 Package Qg (Typ.) Limit 60 45 nC 60 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • Ultra Low Thermal Resistance Using Top-Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size, ≤ 100 V • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS • Primary Side Switch • Half Bridge D D S G D D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 S N-Channel MOSFET For Related Documents www.vishay.com/ppg?65006 Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE868DF-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH ID Symbol VDS VGS Limit 40 ± 20 169 (Silicon Limit) 60a (Package Limit) 60a 35b, c 34b, c 100 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS mJ TC = 25 °C TC = 70 °C PD W Maximum Power Dissipation TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 www.vishay.com 1 New Product SiE868DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 0.8 2.2 Maximum 24 1 2.7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A Min. 40 Typ. Max. Unit V 1.0 45 - 5.5 1.6 mV/°C 2.2 ± 100 1 10 0.0023 0.0029 V nA µA A 25 0.0018 0.0024 105 6100 700 320 95 45 17 12 1.1 40 165 65 110 15 15 50 10 Drain-Source On-State Resistance Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ω S VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A VDS = 20 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.2 pF 145 65 IS ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current nC Ω VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2.2 60 250 100 165 25 25 75 15 60 100 1.2 75 115 ns TC = 25 °C IS = 1 0 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 0.8 50 75 30 20 A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 New Product SiE868DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 VGS = 10 V thru 4 V 80 VGS = 3 V ID - Drain Current (A) 60 ID - Drain Current (A) 12 16 TC = 125 °C 20 40 8 TC = 25 °C 4 TC = - 55 °C 20 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0030 8000 7000 Transfer Characteristics 0.0025 RDS(on) - On-Resistance (Ω) C - Capacitance (pF) VGS = 4.5 V 0.0020 VGS = 10 V Ciss 6000 5000 4000 3000 2000 0.0015 0.0010 0.0005 1000 Crss 0.0000 0 20 40 60 80 100 0 0 5 10 Coss 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 20 V 4 VDS = 32 V RDS(on) - On-Resistance (Normalized) 1.6 2.0 ID = 20 A 1.8 Capacitance VGS = 4.5 V VGS = 10 V 1.4 1.2 1.0 0.8 2 0 0 20 40 60 80 100 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 www.vishay.com 3 New Product SiE868DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.008 0.007 RDS(on) - On-Resistance (Ω) 0.006 0.005 0.004 TJ = 125 °C 0.003 0.002 0.001 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) TJ = 25 °C ID = 20 A IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.0 50 On-Resistance vs. Gate-to-Source Voltage 1.8 40 1.6 VGS(th) (V) Power (W) 30 1.4 ID = 250 µA 1.2 20 1.0 10 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* Single Pulse Power, Junction-to-Ambient 10 ID - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 0.1 TA = 25 °C Single Pulse 0.01 0.01 BVDSS 10 s DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 New Product SiE868DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 140 120 160 ID - Drain Current (A) Power Dissipation (W) 100 80 60 40 20 120 80 Package Limited 40 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 www.vishay.com 5 New Product SiE868DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 68 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65006. www.vishay.com 6 Document Number: 65006 S09-1222-Rev. A, 29-Jun-09 Package Information Vishay Siliconix POLARPAK™ OPTION L M4 10 T5 M4 9 G 8 S 7 S 6 D Product datasheet/information page contain links to applicable package drawing. D T3 θ T4 T1 T2 E1 View A M3 T3 M2 M1 M3 T5 θ D 1 G 2 S 3 (Top View) S 4 D 5 H1 b1 H4 6 D c A b3 7 S 8 S H3 b2 H2 9 G b1 H1 10 D θ Z θ K4 P1 K3 P1 D1 D K2 K1 P1 P1 A1 K3 E b4 K4 b4 A 0.26 DETAIL Z D 5 b5 0.13 0.25 S 4 b5 View A (Bottom View) S 3 b5 G 2 D 1 A 0.39 0.20 0.33 0.58 Document Number: 72945 Revision: 11-Aug-08 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS DIM A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K2 K3 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 θ MIN. 0.75 0.00 0.48 0.41 2.19 0.89 0.23 0.20 6.00 5.74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 1.08 1.37 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0 0° NOM. 0.80 0.58 0.51 2.29 1.04 0.33 0.25 6.15 5.89 5.16 4.90 0.41 4.37 1.13 4.50 3.58 0.20 3.64 0.76 0.18 10° MAX. 0.85 0.05 0.68 0.61 2.39 1.19 0.43 0.30 6.30 6.04 5.31 5.05 0.56 0.51 0.56 4.52 1.18 4.70 3.73 0.25 4.10 0.95 0.36 12° MIN. 0.030 0.000 0.019 0.016 0.086 0.035 0.009 0.008 0.236 0.226 0.197 0.187 0.009 0.018 0.012 0.018 0.166 0.043 0.054 0.009 0.169 0.135 0.009 0.002 0.006 0.137 0.022 0.047 0.153 0.000 0° INCHES NOM. 0.031 0.023 0.020 0.090 0.041 0.013 0.010 0.242 0.232 0.203 0.193 0.016 0.172 0.044 0.177 0.141 0.008 0.143 0.030 0.007 10° MAX. 0.033 0.002 0.027 0.024 0.094 0.047 0.017 0.012 0.248 0.238 0.209 0.199 0.022 0.020 0.022 0.178 0.046 0.185 0.147 0.010 0.161 0.037 0.014 12° ECN: T-08441-Rev. C, 11-Aug-08 DWG: 5946 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 72945 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.410 (0.016) 0.510 (0.020) 0.955 (0.038) 0.955 (0.038) 0.895 (0.035) 6.310 (0.248) 4.520 (0.178) + 0.895 (0.035) 0.580 (0.023) 0.510 (0.020) 2.290 (0.090) 0.580 (0.023) Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) APPLICATION NOTE Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1