SIE876DF

New Product SiE876DF Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY ID (A) VDS (V) 60 RDS(on) (Ω) 0.0061 at VGS = 10 V Silicon Limit 110 Package Qg (Typ.) Limit 60 51 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size < 150 V • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC Package Drawing: www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D S G D D • Primary Side Switch • Half-Bridge G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 S N-Channel MOSFET For Related Documents: www.vishay.com/ppg?64823 Bottom View Top surface is connected to pins 1, 5, 6, and 10 Ordering Information: SiE876DF-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH ID Symbol VDS VGS Limit 60 ± 20 110 (Silicon Limit) 60a (Package Limit) 60a 22b, c 17.9b, c 60 60a 4.3b, c 50 125 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD mJ W TJ, Tstg °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 64823 S09-0862-Rev. A, 18-May-09 www.vishay.com 1 TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range New Product SiE876DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) t ≤ 10 s Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 0.8 2.2 Maximum 24 1 2.7 °C/W Unit Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VDS = 15 V, ID = 20 A 2.5 60 70 -9 4.4 ± 100 1 10 0.0050 30 3100 480 180 51 19 15 1.1 22 10 25 10 0.0061 V mV/°C V nA µA A Ω S Symbol Test Conditions Min. Typ. Max. Unit ID(on) On-State Drain Currenta a RDS(on) Drain-Source On-State Resistance gfs Forward Transconductancea Dynamicb Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Total Gate Charge Qg Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Drain-Source Body Diode Characteristics IS Continuous Source-Drain Diode Current ISM Pulse Diode Forward Currenta VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. 25 VDS = 30 V, VGS = 0 V, f = 1 MHz pF 77 nC 2.2 30 15 40 15 60 60 1.2 90 205 Ω VDS = 30 V, VGS = 10 V, ID = 19.8 A f = 1 MHz VDD = 30 V, RL = 3 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω ns TC = 25 °C IS = 1 0 A 0.8 60 135 42 18 A V ns nC ns IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 64823 S09-0862-Rev. A, 18-May-09 New Product SiE876DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 VGS = 10 V thru 7 V 80 15 I D - Drain Current (A) I D - Drain Current (A) 60 VGS = 6 V 40 TC = - 55 °C 10 20 TC = 25 °C 5 TC = 125 °C 0 20 VGS = 5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0060 4000 3500 RDS(on) - On-Resistance (Ω) 0.0056 3000 C - Capacitance (pF) 0.0052 VGS = 10 V 2500 2000 1500 1000 0.0044 500 0.0040 0 20 40 60 80 100 0 0 Crss 10 Transfer Characteristics Ciss 0.0048 Coss 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 19.8 A VGS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance (Normalized) VDS = 30 V 6 VDS = 30 V 1.8 Capacitance 1.6 VGS = 10 V, ID = 20 A 1.4 1.2 4 1.0 2 0.8 0 0 10 20 30 40 50 60 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 64823 S09-0862-Rev. A, 18-May-09 www.vishay.com 3 New Product SiE876DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 ID = 20 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.015 TJ = 125 °C 0.010 10 TJ = 150 °C TJ = 25 °C TJ = 25 °C 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 4.4 50 On-Resistance vs. Gate-to-Source Voltage 4.0 ID = 250 µA 3.6 V GS(th) (V) Power (W) 40 30 3.2 20 2.8 10 2.4 2.0 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 100 µs 1 ms 10 ms 1 100 ms 1s 0.1 TA = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 10 s DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 64823 S09-0862-Rev. A, 18-May-09 New Product SiE876DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 140 120 Power Dissipation (W) 100 80 60 40 20 0 100 I D - Drain Current (A) 80 Package Limited 60 40 20 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64823 S09-0862-Rev. A, 18-May-09 www.vishay.com 5 New Product SiE876DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 P DM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 68 °C/W 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Normalized Effective Transient Thermal Impedance 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64823. www.vishay.com 6 Document Number: 64823 S09-0862-Rev. A, 18-May-09 Package Information Vishay Siliconix POLARPAK™ OPTION L M4 10 T5 M4 9 G 8 S 7 S 6 D Product datasheet/information page contain links to applicable package drawing. D T3 θ T4 T1 T2 E1 View A M3 T3 M2 M1 M3 T5 θ D 1 G 2 S 3 (Top View) S 4 D 5 H1 b1 H4 6 D c A b3 7 S 8 S H3 b2 H2 9 G b1 H1 10 D θ Z θ K4 P1 K3 P1 D1 D K2 K1 P1 P1 A1 K3 E b4 K4 b4 A 0.26 DETAIL Z D 5 b5 0.13 0.25 S 4 b5 View A (Bottom View) S 3 b5 G 2 D 1 A 0.39 0.20 0.33 0.58 Document Number: 72945 Revision: 11-Aug-08 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS DIM A A1 b1 b2 b3 b4 b5 c D D1 E E1 H1 H2 H3 H4 K1 K2 K3 K4 M1 M2 M3 M4 P1 T1 T2 T3 T4 T5 θ MIN. 0.75 0.00 0.48 0.41 2.19 0.89 0.23 0.20 6.00 5.74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 1.08 1.37 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0 0° NOM. 0.80 0.58 0.51 2.29 1.04 0.33 0.25 6.15 5.89 5.16 4.90 0.41 4.37 1.13 4.50 3.58 0.20 3.64 0.76 0.18 10° MAX. 0.85 0.05 0.68 0.61 2.39 1.19 0.43 0.30 6.30 6.04 5.31 5.05 0.56 0.51 0.56 4.52 1.18 4.70 3.73 0.25 4.10 0.95 0.36 12° MIN. 0.030 0.000 0.019 0.016 0.086 0.035 0.009 0.008 0.236 0.226 0.197 0.187 0.009 0.018 0.012 0.018 0.166 0.043 0.054 0.009 0.169 0.135 0.009 0.002 0.006 0.137 0.022 0.047 0.153 0.000 0° INCHES NOM. 0.031 0.023 0.020 0.090 0.041 0.013 0.010 0.242 0.232 0.203 0.193 0.016 0.172 0.044 0.177 0.141 0.008 0.143 0.030 0.007 10° MAX. 0.033 0.002 0.027 0.024 0.094 0.047 0.017 0.012 0.248 0.238 0.209 0.199 0.022 0.020 0.022 0.178 0.046 0.185 0.147 0.010 0.161 0.037 0.014 12° ECN: T-08441-Rev. C, 11-Aug-08 DWG: 5946 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 72945 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.410 (0.016) 0.510 (0.020) 0.955 (0.038) 0.955 (0.038) 0.895 (0.035) 6.310 (0.248) 4.520 (0.178) + 0.895 (0.035) 0.580 (0.023) 0.510 (0.020) 2.290 (0.090) 0.580 (0.023) Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) APPLICATION NOTE Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1