SIHFBF20L-E3

IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 38 4.7 21 Single D FEATURES 900 8.0 • Surface Mount (IRFBF20S/SiHFBF20S) • Low-Profile Through-Hole (IRFBF20L/SiHFBF20L) • Available in Tape (IRFBF20S/SiHFBF20S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available and Available Reel RoHS* COMPLIANT I2PAK (TO-262) D2PAK (TO-263) DESCRIPTION G G D S S N-Channel MOSFET Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capabel of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBF20L/SiHFBF20L) is available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK (TO-263) IRFBF20SPbF SiHFBF20S-E3 IRFBF20S SiHFBF20S-E3 D2PAK (TO-263) IRFBF20STRLPbFa SiHFBF20STL-E3a IRFBF20STRLa SiHFBF20STLa D2PAK (TO-263) IRFBF20STRRPbFa SiHFBF20STR-E3a IRFBF20STRRa SiHFBF20STRa I2PAK (TO-262) IRFBF20LPbF SiHFBF20L-E3 IRFBF20L SiHFBF20L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltagee Gate-Source Voltagee Continuous Drain Current Pulsed Drain Currenta,e Linear Derating Factor Single Pulse Avalanche Energyb, e Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 www.vishay.com 1 TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 900 ± 20 1.7 1.1 6.8 0.43 180 1.7 5.4 54 3.1 1.5 W/°C mJ A mJ W V/ns A UNIT V WORK-IN-PROGRESS IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw SYMBOL TJ, Tstg LIMIT - 55 to + 150 300d 10 UNIT °C N Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, RG = 25 Ω, IAS = 1.7 A (see fig. 12). c. ISD ≤ 1.7 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBF20/SiHFBF20 data and test conditions. THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB Mounted, steady-state)a Maximum Junction-to-Case SYMBOL RthJA RthJC TYP. MAX. 40 2.3 UNIT °C/W Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 450 V, ID = 1.7 A, RG = 18 Ω, VGS = 10 V, see fig. 10b VGS = 10 V ID = 1.7 A, VDS = 360 V, see fig. 6 and 13b VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 490 55 18 8.0 21 56 32 38 4.7 21 ns nC pF VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 20 V VDS = 900 V, VGS = 0 V VDS = 720 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 1.0 Ab Ab VDS = 50 V, ID = 1.0 900 2.0 0.6 1.1 4.0 ± 100 100 500 8.0 V mV/°C V nA µA Ω S SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT www.vishay.com 2 Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT - 350 0.85 1.7 A 6.8 1.5 530 1.3 V ns µC G S TJ = 25 °C, IS = 1.7 A, VGS = 0 Vb TJ = 25 °C, IF = 1.7 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRFBF20/SiHFBF20 data and test conditions. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 www.vishay.com 3 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Fig. 3 - Typical Transfer Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature RD VDS VGS RG D.U.T. + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 8 - Maximum Safe Operating Area Fig. 10b - Switching Time Waveforms Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 www.vishay.com 5 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS RG VDS tp VDD D.U.T. IAS 10 V tp 0.01 Ω IAS Fig. 12b - Unclamped Inductive Waveforms VDS + - V DD VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ 12 V 10 V QGS QG 0.2 µF 0.3 µF QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91121. Document Number: 91121 S-Pending-Rev. A, 23-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1