IRFD020, SiHFD020
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 7.1 7.1 Single
D
FEATURES
50 0.10
• For Automatic Insertion • Compact, End Stackable • Fast Switching • Ease of Paralleling • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
HVMDIP
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging.
S D
G G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb HVMDIP IRFD020PbF SiHFD020-E3 IRFD020 SiHFD020
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltagea Gate-Source Voltage Continuous Drain Current Pulsed Drain Currentb Linear Derating Factor Inductive Current, Clamped Unclamped Inductive Current (Avalanche Current)c Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a. TJ = 25 °C to 150 °C b. Repetitive rating; pulse width limited by maximum junction temperature. c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 d. 1.6 mm from case. L = 100 μH TC = 25 °C ILM IL PD TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 50 ± 20 2.4 1.5 19 0.0080 19 2.2 1.0 - 55 to + 150 300d W/°C A W °C A UNIT V
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91465 S11-0915-Rev. A, 16-May-11 www.vishay.com 1
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient SYMBOL RthJA TYP. MAX. 120 UNIT °C/W
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Body Diode Voltagea Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time Currentc IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = max. rating, VGS = 0 V VDS = max. rating x 0.8, VGS = 0 V, TC = 125 VGS = 10 V VGS = 10 V VDS > ID(on) x RDS(on) max. ID = 1.4 A
50 2.0 2.4 4.9
0.080 7.3
4.0 ± 500 250 1000 0.10 -
V V nA μA A S
VDS = 20 V, ID = 7.5 A
VGS = 0 V, VDS = 25 V, f = 1.0 MHz
-
400 260 44 16 4.7 4.7 8.7 55 16 26 4.0 6.0
24 7.1 7.1 13 83 24 39 nH ns nC pF
VGS = 10 V
ID = 15 A, VDS = max. rating x 0.8
-
VDD = 25 V, ID = 15 A, Rg = 18 , RD = 1.7
-
Between lead, 6 mm (0.25") from package and center of die contact
D
-
G
S
57 0.17
130 0.34
2.4 A 19 1.4 310 0.85 V ns μC
G
S
TC = 25 °C, IS = 2.4 A, VGS = 0 V TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25
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Document Number: 91465 S11-0915-Rev. A, 16-May-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91465 S11-0915-Rev. A, 16-May-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91465 S11-0915-Rev. A, 16-May-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig. 11 - Typical Transconductance vs. Drain Current Document Number: 91465 S11-0915-Rev. A, 16-May-11
Fig. 12 - Breakdown Voltage vs. Temperature www.vishay.com 5
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
Fig. 15a - Unclamped Inductive Load Test Waveforms
Fig. 13 - Typical on-Resistance vs. Drain Current
Fig. 16 - Switching Time Test Circuit
Fig. 14a - Clamped Inductive Test Circuit
Fig. 14b - Clamped Inductive Waveforms Fig. 17 - Gate Charge Test Circuit
Fig. 15a - Unclamped Inductive Test Circuit
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Document Number: 91465 S11-0915-Rev. A, 16-May-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
Fig. 18 - Typical Time to Accumulated 1 % Gate Failure
Fig. 19 - Typical High Temperature Reverse Bias (HTRB) Failure Rate
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91465.
Document Number: 91465 S11-0915-Rev. A, 16-May-11
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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