SIHFP450N

IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 77 26 34 Single D FEATURES 500 0.37 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free RoHS COMPLIANT TO-247 APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching G TYPICAL SMPS TOPOLOGIES S D G S N-Channel MOSFET • Two Transistor Forward • Half Bridge and Full Bridge • PFC Boost ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247 IRFP450NPbF SiHFP450N-E3 IRFP450N SiHFP450N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 14 A (see fig. 12). ISD ≤ 14 A, dI/dt ≤ 510 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. 1.6 mm from case. VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 500 ± 30 14 8.8 56 1.6 170 14 20 200 5.0 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m TC = 25 °C for 10 s 6-32 or M3 screw Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 WORK-IN-PROGRESS www.vishay.com 1 IRFP450N, SiHFP450N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.64 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Coss Coss eff. Qg Qgs Qgd td(on) tr td(off) tf TEST CONDITIONS VGS = 0 V, ID = 250 µA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 µA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 8.4 Ab VDS = 50 V, ID = 8.4 A MIN. 500 3.0 7.9 - TYP. 0.59 2260 210 14 2410 59 110 20 63 29 25 MAX. 5.0 ± 100 25 250 0.37 77 26 34 - UNIT V V/°C V nA µA Ω S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VGS = 0 V VDS = 400 V, f = 1.0 MHz VDS = 0 V to 400 Vc VGS = 10 V ID = 14 A, VDS = 400 V, see fig. 6 and 13b pF - nC VDD = 250 V, ID = 14 A RG = 6.2 Ω,VGS = 10 V, see fig. 10b - ns - 430 3.7 14 A 56 1.4 650 5.6 V ns µC G S TJ = 25 °C, IS = 14 A, VGS = 0 Vb TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 IRFP450N, SiHFP450N Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TJ = 150 ° C 10 10 1 1 TJ = 25 ° C 6.0V 0.1 0.1 20μs PULSE WIDTH TJ = 25 °C 1 10 10 0.1 6.0 V DS = 50V 20μs PULSE WIDTH 7.0 8.0 9.0 10.0 VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 100 TOP RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V 3.0 ID = 14A 2.5 2.0 10 1.5 6.0V 1.0 0.5 1 1 10 20μs PULSE WIDTH TJ = 150 ° C 10 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 www.vishay.com 3 IRFP450N, SiHFP450N Vishay Siliconix 100000 10000 Coss = Cds + Cgd Ciss 1000 ISD , Reverse Drain Current (A) VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd 100 C, Capacitance(pF) 10 TJ = 150 ° C 100 Coss 1 10 Crss TJ = 25 ° C 0.1 0.2 1 1 10 100 1000 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VDS, Drain-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 1000 ID = 14A VDS = 400V VDS = 250V VDS = 100V VGS , Gate-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) 16 100 12 10 100μsec 1msec Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 10000 VDS , Drain-toSource Voltage (V) 8 1 4 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 10msec QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 IRFP450N, SiHFP450N Vishay Siliconix 14 VGS VDS RD D.U.T. + - VDD 12 RG ID , Drain Current (A) 10 8 6 VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit 4 2 0 25 50 75 100 125 150 90 % TC , Case Temperature ( ° C) Fig. 9 - Maximum Drain Current vs. Case Temperature 1 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 www.vishay.com 5 IRFP450N, SiHFP450N Vishay Siliconix 15 V VDS tp VDS L Driver RG 20 V tp D.U.T. IAS 0.01 Ω + A - VDD A IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS , Single Pulse Avalanche Energy (mJ) 300 TOP 250 BOTTOM ID 6.3A 8.9A 14A 200 150 100 50 0 25 50 75 100 125 150 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Starting TJ , Junction Temperature ( °C) Current regulator Same type as D.U.T. 50 kΩ 12 V VGS QGS QG 0.2 µF 0.3 µF QGD D.U.T. + - VDS VG VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 IRFP450N, SiHFP450N Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91232. Document Number: 91232 S-Pending-Rev. b, 26-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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