IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 11 3.1 5.8 Single
D
FEATURES
60 0.20
• Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Surface Mount (IRFR014, SiHFR014) • Straight Lead (IRFU014, SiHFU014) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
DPAK (TO-252)
D D
IPAK (TO-251)
DESCRIPTION
G
G
S G
DS
S N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SnPb Note a. See device orientation. DPAK (TO-252) SiHFR014-GE3 IRFR014PbF SiHFR014-E3 IRFR014 SiHFR014 DPAK (TO-252) SiHFR014TRL-GE3 IRFR014TRLPbFa SiHFR014TL-E3a IRFR014TRLa SiHFR014TLa DPAK (TO-252) SiHFR014TR-GE3 IRFR014TRPbFa SiHFR014T-E3a IRFR014TRa SiHFR014Ta IPAK (TO-251) SIHFU014-GE3 IRFU014PbF SiHFU014-E3 IRFU014 SiHFU014
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID LIMIT 60 ± 20 7.7 4.9 31 0.20 0.020 27.4 25 2.5 4.5 - 55 to + 150 260d UNIT V
A
Pulsed Drain Currenta IDM Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb EAS Maximum Power Dissipation TC = 25 °C PD TA = 25 °C Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 Ω, IAS = 7.7 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91263 S10-1122-Rev. D, 10-May-10
W/°C mJ W V/ns °C
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IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJA RthJC MIN. TYP. MAX. 110 50 5.0 °C/W UNIT
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 4.6 Ab VDS = 25 V, ID = 4.6 A
60 2.0 2.4 -
0.068 300 160 29 10 50 13 19 4.5 7.5
4.0 ± 100 25 250 0.20 11 3.1 5.8 -
V V/°C V nA μA Ω S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 ID = 10 A, VDS = 48 V, see fig. 6 and 13b
pF
VGS = 10 V
nC
VDD = 30 V, ID = 10 A, Rg = 24 Ω, RD = 2.7 Ω, see fig. 10b
ns
Between lead, 6 mm (0.25") from package and center of die contactc
D
G
nH S
-
-
70 0.20
7.7 A 31 1.6 140 0.40 V ns μC
G
S
TJ = 25 °C, IS = 7.7 A, VGS = 0
Vb
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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Document Number: 91263 S10-1122-Rev. D, 10-May-10
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91263 S10-1122-Rev. D, 10-May-10
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IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91263 S10-1122-Rev. D, 10-May-10
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
VDS VGS RG
RD
D.U.T. + - VDD
10 V
Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS 90 %
10 % VGS td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91263 S10-1122-Rev. D, 10-May-10
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IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
L Vary tp to obtain required IAS RG VDS tp
VDS VDD
D.U.T I AS
+ -
V DD
VDS
10 V tp 0.01 Ω IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
50 kΩ 12 V 0.2 µF 0.3 µF
VGS QGS
QG
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91263 S10-1122-Rev. D, 10-May-10
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer
D.U.T.
+
-
-
+
Rg
• • • •
dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va
D.U.T. lSD waveform Reverse recovery current
Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple ≤ 5 % Note a. VGS = 5 V for logic level devices
ISD
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91263.
Document Number: 91263 S10-1122-Rev. D, 10-May-10
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Package Information
Vishay Siliconix
TO-252AA (HIGH VOLTAGE)
E b3 E1 L3
D1 D L4 H
b2 A c2 b e
A1 L c θ L2 L1
MILLIMETERS DIM. E L L1 L2 L3 L4 D H b b2 b3 e A A1 c c2 D1 E1 θ ECN: S-81965-Rev. A, 15-Sep-08 DWG: 5973 2.20 0.00 0.45 0.45 5.30 4.40 0' 0.89 0.64 6.00 9.40 0.64 0.77 5.21 2.286 BSC 2.38 0.13 0.60 0.58 10' 0.087 0.000 0.018 0.018 0.209 0.173 0' MIN. 6.40 1.40 2.743 REF 0.508 BSC 1.27 1.01 6.22 10.40 0.88 1.14 5.46 0.035 0.025 0.236 0.370 0.025 0.030 0.205 MAX. 6.73 1.77 MIN. 0.252 0.055
INCHES MAX. 0.265 0.070 0.108 REF 0.020 BSC 0.050 0.040 0.245 0.409 0.035 0.045 0.215 0.090 BSC 0.094 0.005 0.024 0.023 10'
Notes 1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3. The package top may be smaller than the package bottom. 4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum material condition. The dambar cannot be located on the lower radius of the foot.
Document Number: 91344 Revision: 15-Sep-08
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Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
4 E1 Thermal PAD E b4 θ2 D1 4 3 4 A A 0.010 0.25 M C A B L2 4 B D 3 5 (Datum A) L1 L3 C C c2 A
θ1
C
Seating plane
L B B A 3 x b2 View A - A 2xe 3xb 0.010 0.25 M C A B Base metal A1 c
Plating Lead tip (c)
5 b1, b3
c1
5
(b, b2) Section B - B and C - C
MILLIMETERS DIM. A A1 b b1 b2 b3 b4 c c1 c2 D MIN. 2.18 0.89 0.64 0.65 0.76 0.76 4.95 0.46 0.41 0.46 5.97 MAX. 2.39 1.14 0.89 0.79 1.14 1.04 5.46 0.61 0.56 0.86 6.22 MIN.
INCHES MAX. 0.094 0.045 0.035 0.031 0.045 0.041 0.215 0.024 0.022 0.034 0.245 DIM. D1 E E1 e L L1 L2 L3 θ1 θ2
MILLIMETERS MIN. 5.21 6.35 4.32 2.29 BSC 8.89 1.91 0.89 1.14 0' 25' 9.65 2.29 1.27 1.52 15' 35' MAX. 6.73 MIN.
INCHES MAX. 0.265 -
0.086 0.035 0.025 0.026 0.030 0.030 0.195 0.018 0.016 0.018 0.235
0.205 0.250 0.170 2.29 BSC 0.350 0.075 0.035 0.045 0' 25'
0.380 0.090 0.050 0.060 15' 35'
ECN: S-82111-Rev. A, 15-Sep-08 DWG: 5968 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension are shown in inches and millimeters. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions b4, L2, E1 and D1. 5. Lead dimension uncontrolled in L3. 6. Dimension b1, b3 and c1 apply to base metal only. 7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362 Revision: 15-Sep-08
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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
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